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Items: 1 to 20 of 256

1.

Room-temperature compressive transfer printing of nanowires for nanoelectronic devices.

Lee WS, Choi JH, Park I, Lee J.

Langmuir. 2012 Dec 21;28(51):17851-8. doi: 10.1021/la3036133. Epub 2012 Dec 11.

PMID:
23199260
2.

Thermo-compressive transfer printing for facile alignment and robust device integration of nanowires.

Lee WS, Won S, Park J, Lee J, Park I.

Nanoscale. 2012 Jun 7;4(11):3444-9. doi: 10.1039/c2nr30392b. Epub 2012 May 2.

PMID:
22549520
3.

Fabricating nanowire devices on diverse substrates by simple transfer-printing methods.

Lee CH, Kim DR, Zheng X.

Proc Natl Acad Sci U S A. 2010 Jun 1;107(22):9950-5. doi: 10.1073/pnas.0914031107. Epub 2010 May 17.

4.

Direct micro/nano metal patterning based on two-step transfer printing of ionic metal nano-ink.

Kim S, Lee WS, Lee J, Park I.

Nanotechnology. 2012 Jul 20;23(28):285301. doi: 10.1088/0957-4484/23/28/285301. Epub 2012 Jun 21.

PMID:
22717381
5.

Direct gravure printing of silicon nanowires using entropic attraction forces.

Seo J, Lee H, Lee S, Lee TI, Myoung JM, Lee T.

Small. 2012 May 21;8(10):1614-21. doi: 10.1002/smll.201102367. Epub 2012 Mar 19.

PMID:
22431282
6.

Fabrication of functional nanowire devices on unconventional substrates using strain-release assembly.

Durham JW 3rd, Zhu Y.

ACS Appl Mater Interfaces. 2013 Jan 23;5(2):256-61. doi: 10.1021/am302384z. Epub 2012 Dec 28.

PMID:
23249184
7.

A high-yield two-step transfer printing method for large-scale fabrication of organic single-crystal devices on arbitrary substrates.

Deng W, Zhang X, Pan H, Shang Q, Wang J, Zhang X, Zhang X, Jie J.

Sci Rep. 2014 Jun 19;4:5358. doi: 10.1038/srep05358.

8.

Wafer-scale assembly of highly ordered semiconductor nanowire arrays by contact printing.

Fan Z, Ho JC, Jacobson ZA, Yerushalmi R, Alley RL, Razavi H, Javey A.

Nano Lett. 2008 Jan;8(1):20-5. Epub 2007 Aug 16.

PMID:
17696563
9.

Massive assembly of ZnO nanowire-based integrated devices.

Kang J, Myung S, Kim B, Oh D, Kim GT, Hong S.

Nanotechnology. 2008 Mar 5;19(9):095303. doi: 10.1088/0957-4484/19/9/095303. Epub 2008 Feb 11.

PMID:
21817667
10.

Near-ultraviolet zinc oxide nanowire sensor using low temperature hydrothermal growth.

Swanwick ME, Pfaendler SM, Akinwande AI, Flewitt AJ.

Nanotechnology. 2012 Aug 31;23(34):344009. doi: 10.1088/0957-4484/23/34/344009. Epub 2012 Aug 10.

PMID:
22885284
11.

Well-aligned ZnO nanowires with excellent field emission and photocatalytic properties.

Chu FH, Huang CW, Hsin CL, Wang CW, Yu SY, Yeh PH, Wu WW.

Nanoscale. 2012 Mar 7;4(5):1471-5. doi: 10.1039/c1nr10796h. Epub 2011 Oct 7.

PMID:
21979153
12.

Facile synthesis of highly uniform Mn/Co-codoped ZnO nanowires: optical, electrical, and magnetic properties.

Li H, Huang Y, Zhang Q, Qiao Y, Gu Y, Liu J, Zhang Y.

Nanoscale. 2011 Feb;3(2):654-60. doi: 10.1039/c0nr00644k. Epub 2010 Nov 26.

PMID:
21113544
13.

Fabrication of high performance field-effect transistors and practical Schottky contacts using hydrothermal ZnO nanowires.

Opoku C, Dahiya AS, Oshman C, Daumont C, Cayrel F, Poulin-Vittrant G, Alquier D, Camara N.

Nanotechnology. 2015 Sep 4;26(35):355704. doi: 10.1088/0957-4484/26/35/355704. Epub 2015 Aug 6.

PMID:
26245930
14.
15.

Nonvolatile multibit Schottky memory based on single n-type Ga doped CdSe nanowires.

Wu D, Jiang Y, Yu Y, Zhang Y, Li G, Zhu Z, Wu C, Wang L, Luo L, Jie J.

Nanotechnology. 2012 Dec 7;23(48):485203. doi: 10.1088/0957-4484/23/48/485203. Epub 2012 Nov 9.

PMID:
23138192
16.

A facile patterning of silver nanowires using a magnetic printing method.

Ahn T, Kim HJ, Lee J, Choi DG, Jung JY, Choi JH, Jeon S, Kim JD, Jeong JH.

Nanotechnology. 2015 Aug 28;26(34):345301.

PMID:
26242642
17.

Electrical contact tunable direct printing route for a ZnO nanowire Schottky diode.

Lee TI, Choi WJ, Kar JP, Kang YH, Jeon JH, Park JH, Kim YS, Baik HK, Myoung JM.

Nano Lett. 2010 Sep 8;10(9):3517-23. doi: 10.1021/nl101684c.

PMID:
20707383
18.

Growth of SiO(x) nanowires by laser ablation.

Aharonovich I, Tamir S, Lifshitz Y.

Nanotechnology. 2008 Feb 13;19(6):065608. doi: 10.1088/0957-4484/19/6/065608. Epub 2008 Jan 23.

PMID:
21730706
19.

Cl-doped ZnO nanowires with metallic conductivity and their application for high-performance photoelectrochemical electrodes.

Wang F, Seo JH, Li Z, Kvit AV, Ma Z, Wang X.

ACS Appl Mater Interfaces. 2014 Jan 22;6(2):1288-93. doi: 10.1021/am405141s. Epub 2014 Jan 8.

PMID:
24383705
20.

Room-Temperature-Processable Wire-Templated Nanoelectrodes for Flexible and Transparent All-Wire Electronics.

Min SY, Lee Y, Kim SH, Park C, Lee TW.

ACS Nano. 2017 Apr 25;11(4):3681-3689. doi: 10.1021/acsnano.6b08172. Epub 2017 Mar 27.

PMID:
28314370

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