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Items: 1 to 20 of 87

1.

Triggered indistinguishable single photons with narrow line widths from site-controlled quantum dots.

Jöns KD, Atkinson P, Müller M, Heldmaier M, Ulrich SM, Schmidt OG, Michler P.

Nano Lett. 2013 Jan 9;13(1):126-30. doi: 10.1021/nl303668z. Epub 2012 Dec 5.

PMID:
23198958
2.

Single site-controlled In(Ga)As/GaAs quantum dots: growth, properties and device integration.

Schneider C, Huggenberger A, Sünner T, Heindel T, Strauss M, Göpfert S, Weinmann P, Reitzenstein S, Worschech L, Kamp M, Höfling S, Forchel A.

Nanotechnology. 2009 Oct 28;20(43):434012. doi: 10.1088/0957-4484/20/43/434012. Epub 2009 Oct 2.

PMID:
19801767
3.

Ultraclean emission from InAsP quantum dots in defect-free wurtzite InP nanowires.

Dalacu D, Mnaymneh K, Lapointe J, Wu X, Poole PJ, Bulgarini G, Zwiller V, Reimer ME.

Nano Lett. 2012 Nov 14;12(11):5919-23. doi: 10.1021/nl303327h. Epub 2012 Oct 17.

PMID:
23066839
4.

Single photon emission from site-controlled InAs quantum dots grown on GaAs(001) patterned substrates.

Martín-Sánchez J, Muñoz-Matutano G, Herranz J, Canet-Ferrer J, Alén B, González Y, Alonso-González P, Fuster D, González L, Martínez-Pastor J, Briones F.

ACS Nano. 2009 Jun 23;3(6):1513-7. doi: 10.1021/nn9001566.

PMID:
19435304
5.

Highly directional emission and photon beaming from nanocrystal quantum dots embedded in metallic nanoslit arrays.

Livneh N, Strauss A, Schwarz I, Rosenberg I, Zimran A, Yochelis S, Chen G, Banin U, Paltiel Y, Rapaport R.

Nano Lett. 2011 Apr 13;11(4):1630-5. doi: 10.1021/nl200052j. Epub 2011 Mar 28.

PMID:
21443242
6.

Deterministic Integration of Single Photon Sources in Silicon Based Photonic Circuits.

Zadeh IE, Elshaari AW, Jöns KD, Fognini A, Dalacu D, Poole PJ, Reimer ME, Zwiller V.

Nano Lett. 2016 Apr 13;16(4):2289-94. doi: 10.1021/acs.nanolett.5b04709. Epub 2016 Mar 17.

7.

Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots.

Huber D, Reindl M, Huo Y, Huang H, Wildmann JS, Schmidt OG, Rastelli A, Trotta R.

Nat Commun. 2017 May 26;8:15506. doi: 10.1038/ncomms15506.

PMID:
28548081
8.

Indistinguishable photons from a single-photon device.

Santori C, Fattal D, Vucković J, Solomon GS, Yamamoto Y.

Nature. 2002 Oct 10;419(6907):594-7.

PMID:
12374958
9.

Generation, guiding and splitting of triggered single photons from a resonantly excited quantum dot in a photonic circuit.

Schwartz M, Rengstl U, Herzog T, Paul M, Kettler J, Portalupi SL, Jetter M, Michler P.

Opt Express. 2016 Feb 8;24(3):3089-94. doi: 10.1364/OE.24.003089.

PMID:
26906873
10.

On-Chip Generation, Routing, and Detection of Resonance Fluorescence.

Reithmaier G, Kaniber M, Flassig F, Lichtmannecker S, Müller K, Andrejew A, Vučković J, Gross R, Finley JJ.

Nano Lett. 2015 Aug 12;15(8):5208-13. doi: 10.1021/acs.nanolett.5b01444. Epub 2015 Jul 10.

PMID:
26102603
11.

Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates.

Skiba-Szymanska J, Jamil A, Farrer I, Ward MB, Nicoll CA, Ellis DJ, Griffiths JP, Anderson D, Jones GA, Ritchie DA, Shields AJ.

Nanotechnology. 2011 Feb 11;22(6):065302. doi: 10.1088/0957-4484/22/6/065302. Epub 2011 Jan 7.

PMID:
21212488
12.

Size-dependent properties of single InAs quantum dots grown in nanoimprint lithography patterned GaAs pits.

Tommila J, Schramm A, Hakkarainen TV, Dumitrescu M, Guina M.

Nanotechnology. 2013 Jun 14;24(23):235204. doi: 10.1088/0957-4484/24/23/235204. Epub 2013 May 15.

PMID:
23676532
13.

Wavelength-tunable entangled photons from silicon-integrated III-V quantum dots.

Chen Y, Zhang J, Zopf M, Jung K, Zhang Y, Keil R, Ding F, Schmidt OG.

Nat Commun. 2016 Jan 27;7:10387. doi: 10.1038/ncomms10387.

14.

Photoluminescence imaging of focused ion beam induced individual quantum dots.

Lee J, Saucer TW, Martin AJ, Tien D, Millunchick JM, Sih V.

Nano Lett. 2011 Mar 9;11(3):1040-3. doi: 10.1021/nl1038902. Epub 2011 Feb 8.

PMID:
21302932
15.

Highly indistinguishable photons from deterministic quantum-dot microlenses utilizing three-dimensional in situ electron-beam lithography.

Gschrey M, Thoma A, Schnauber P, Seifried M, Schmidt R, Wohlfeil B, Krüger L, Schulze JH, Heindel T, Burger S, Schmidt F, Strittmatter A, Rodt S, Reitzenstein S.

Nat Commun. 2015 Jul 16;6:7662. doi: 10.1038/ncomms8662.

16.

Homogeneous array of nanowire-embedded quantum light emitters.

Makhonin MN, Foster AP, Krysa AB, Fry PW, Davies DG, Grange T, Walther T, Skolnick MS, Wilson LR.

Nano Lett. 2013 Mar 13;13(3):861-5. doi: 10.1021/nl303075q. Epub 2013 Feb 19.

PMID:
23398085
17.

Ultraclean Single Photon Emission from a GaN Quantum Dot.

Arita M, Le Roux F, Holmes MJ, Kako S, Arakawa Y.

Nano Lett. 2017 May 10;17(5):2902-2907. doi: 10.1021/acs.nanolett.7b00109. Epub 2017 Apr 26.

PMID:
28434223
18.

Indistinguishable tunable single photons emitted by spin-flip Raman transitions in InGaAs quantum dots.

He Y, He YM, Wei YJ, Jiang X, Chen MC, Xiong FL, Zhao Y, Schneider C, Kamp M, Höfling S, Lu CY, Pan JW.

Phys Rev Lett. 2013 Dec 6;111(23):237403. Epub 2013 Dec 4.

PMID:
24476302
19.

The influence of temperature on the photoluminescence properties of single InAs quantum dots grown on patterned GaAs.

Tommila J, Strelow C, Schramm A, Hakkarainen TV, Dumitrescu M, Kipp T, Guina M.

Nanoscale Res Lett. 2012 Jun 19;7(1):313. doi: 10.1186/1556-276X-7-313.

20.

Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy.

Schramm A, Tommila J, Strelow C, Hakkarainen TV, Tukiainen A, Dumitrescu M, Mews A, Kipp T, Guina M.

Nanotechnology. 2012 May 4;23(17):175701. doi: 10.1088/0957-4484/23/17/175701. Epub 2012 Apr 5.

PMID:
22481170

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