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Items: 1 to 20 of 121

1.

Factors affecting the shape of MBE-grown laterally aligned Fe nanowires.

Lok SK, Tian JC, Wang Y, Lai YH, Lortz R, Petrovic A, Panagopoulos C, Wong GK, Wang G, Sou IK.

Nanotechnology. 2012 Dec 7;23(48):485605. doi: 10.1088/0957-4484/23/48/485605. Epub 2012 Nov 6.

PMID:
23128068
2.

Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate.

Wierzbicka A, Zytkiewicz ZR, Kret S, Borysiuk J, Dluzewski P, Sobanska M, Klosek K, Reszka A, Tchutchulashvili G, Cabaj A, Lusakowska E.

Nanotechnology. 2013 Jan 25;24(3):035703. doi: 10.1088/0957-4484/24/3/035703. Epub 2012 Dec 21.

PMID:
23262581
3.

Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B.

Davydok A, Rieger T, Biermanns A, Saqib M, Grap T, Lepsa MI, Pietsch U.

J Appl Crystallogr. 2013 Aug 1;46(Pt 4):893-897. Epub 2013 Jun 7.

4.

Magnetization reversal in YIG/GGG(111) nanoheterostructures grown by laser molecular beam epitaxy.

Krichevtsov BB, Gastev SV, Suturin SM, Fedorov VV, Korovin AM, Bursian VE, Banshchikov AG, Volkov MP, Tabuchi M, Sokolov NS.

Sci Technol Adv Mater. 2017 May 18;18(1):351-363. doi: 10.1080/14686996.2017.1316422. eCollection 2017.

5.

Parallel-aligned GaAs nanowires with 110 orientation laterally grown on [311]B substrates via the gold-catalyzed vapor-liquid-solid mode.

Zhang G, Tateno K, Gotoh H, Nakano H.

Nanotechnology. 2010 Mar 5;21(9):095607. doi: 10.1088/0957-4484/21/9/095607. Epub 2010 Feb 8.

PMID:
20139489
6.

Formation of manganese silicide nanowires on Si(111) surfaces by the reactive epitaxy method.

Wang D, Zou ZQ.

Nanotechnology. 2009 Jul 8;20(27):275607. doi: 10.1088/0957-4484/20/27/275607. Epub 2009 Jun 17.

PMID:
19531857
7.

Control of magnetization reversal by combining shape and magnetocrystalline anisotropy in epitaxial Fe planar nanowires.

Paz E, Cebollada F, Palomares FJ, García-Sánchez F, González JM.

Nanotechnology. 2010 Jun 25;21(25):255301. doi: 10.1088/0957-4484/21/25/255301. Epub 2010 May 28.

PMID:
20508313
8.

Photoluminescence properties of InAs nanowires grown on GaAs and Si substrates.

Sun MH, Leong ES, Chin AH, Ning CZ, Cirlin GE, Samsonenko YB, Dubrovskii VG, Chuang L, Chang-Hasnain C.

Nanotechnology. 2010 Aug 20;21(33):335705. doi: 10.1088/0957-4484/21/33/335705. Epub 2010 Jul 26.

PMID:
20657047
9.

Structure-induced ferromagnetic stabilization in free-standing hexagonal Fe(1.3)Ge nanowires.

Yoon H, Lee AT, Choi EA, Seo K, Bagkar N, Cho J, Jo Y, Chang KJ, Kim B.

J Am Chem Soc. 2010 Dec 15;132(49):17447-51. doi: 10.1021/ja104189p. Epub 2010 Nov 18.

PMID:
21087015
10.

Zn(1-x)MnxTe diluted magnetic semiconductor nanowires grown by molecular beam epitaxy.

Zaleszczyk W, Janik E, Presz A, Dłuzewski P, Kret S, Szuszkiewicz W, Morhange JF, Dynowska E, Kirmse H, Neumann W, Petroutchik A, Baczewski LT, Karczewski G, Wojtowicz T.

Nano Lett. 2008 Nov;8(11):4061-5. doi: 10.1021/nl802449g. Epub 2008 Oct 9.

PMID:
18842031
11.

Tailoring Staircase-like Hysteresis Loops in Electrodeposited Trisegmented Magnetic Nanowires: a Strategy toward Minimization of Interwire Interactions.

Zhang J, Agramunt-Puig S, Del-Valle N, Navau C, Baró MD, Estradé S, Peiró F, Pané S, Nelson BJ, Sanchez A, Nogués J, Pellicer E, Sort J.

ACS Appl Mater Interfaces. 2016 Feb 17;8(6):4109-17. doi: 10.1021/acsami.5b11747. Epub 2016 Feb 4.

PMID:
26804742
12.

Preferential growth of ZnO thin films by the atomic layer deposition technique.

Pung SY, Choy KL, Hou X, Shan C.

Nanotechnology. 2008 Oct 29;19(43):435609. doi: 10.1088/0957-4484/19/43/435609. Epub 2008 Sep 22.

PMID:
21832704
13.

Acoustic charge transport in GaN nanowires.

Ebbecke J, Maisch S, Wixforth A, Calarco R, Meijers R, Marso M, Lüth H.

Nanotechnology. 2008 Jul 9;19(27):275708. doi: 10.1088/0957-4484/19/27/275708. Epub 2008 May 28.

PMID:
21828720
14.

Growth of vertical GaAs nanowires on an amorphous substrate via a fiber-textured Si platform.

Cohin Y, Mauguin O, Largeau L, Patriarche G, Glas F, Søndergård E, Harmand JC.

Nano Lett. 2013 Jun 12;13(6):2743-7.

PMID:
23668839
15.

Ultrathin ZnS single crystal nanowires: controlled synthesis and room-temperature ferromagnetism properties.

Zhu G, Zhang S, Xu Z, Ma J, Shen X.

J Am Chem Soc. 2011 Oct 5;133(39):15605-12. doi: 10.1021/ja2049258. Epub 2011 Sep 12.

PMID:
21870837
16.

Self-assembled single-crystal ferromagnetic iron nanowires formed by decomposition.

Mohaddes-Ardabili L, Zheng H, Ogale SB, Hannoyer B, Tian W, Wang J, Lofland SE, Shinde SR, Zhao T, Jia Y, Salamanca-Riba L, Schlom DG, Wuttig M, Ramesh R.

Nat Mater. 2004 Aug;3(8):533-8. Epub 2004 Jul 25.

PMID:
15273743
17.

Growth, reaction and nanowire formation of Fe on the ZnS(1 0 0) surface.

Man KL, Pavlovska A, Bauer E, Locatelli A, Menteş TO, Niño MA, Wong GK, Sou IK, Altman MS.

J Phys Condens Matter. 2014 Aug 6;26(31):315006. doi: 10.1088/0953-8984/26/27/315006. Epub 2014 Jun 17.

PMID:
24934101
18.

Self-assembled growth of MnSi~1.7 nanowires with a single orientation and a large aspect ratio on Si(110) surfaces.

Zou ZQ, Li WC, Liu XY, Shi GM.

Nanoscale Res Lett. 2013 Jan 22;8(1):45. doi: 10.1186/1556-276X-8-45.

19.

Magnetization reversal in a preferred oriented (111) L1(0) FePt grown on a soft magnetic metallic glass for tilted magnetic recording.

Wang Y, Sharma P, Makino A.

J Phys Condens Matter. 2012 Feb 22;24(7):076004. doi: 10.1088/0953-8984/24/7/076004. Epub 2012 Feb 1.

PMID:
22293096
20.

Unique features of laterally aligned GeSi nanowires self-assembled on the vicinal Si (001) surface misoriented toward the [100] direction.

Zhou T, Vastola G, Zhang YW, Ren Q, Fan Y, Zhong Z.

Nanoscale. 2015 Mar 19;7(13):5835-42. doi: 10.1039/c4nr07433e.

PMID:
25758064

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