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Items: 1 to 20 of 83

1.

Light extraction efficiency of GaN-based LED with pyramid texture by using ray path analysis.

Pan JW, Wang CS.

Opt Express. 2012 Sep 10;20 Suppl 5:A630-40. doi: 10.1364/OE.20.00A630.

PMID:
23037530
2.

Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate.

Lee TX, Gao KF, Chien WT, Sun CC.

Opt Express. 2007 May 28;15(11):6670-6.

PMID:
19546977
4.

Light-extraction enhancement of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated surface textures.

Kim H, Choi KK, Kim KK, Cho J, Lee SN, Park Y, Kwak JS, Seong TY.

Opt Lett. 2008 Jun 1;33(11):1273-5.

PMID:
18516198
5.

Analysis of position-dependent light extraction of GaN-based LEDs.

Lee TX, Lin CY, Ma SH, Sun CC.

Opt Express. 2005 May 30;13(11):4175-9.

PMID:
19495330
6.

Improved light extraction efficiency of InGaN-based multi-quantum well light emitting diodes by using a single die growth.

Park MJ, Kwon KW, Kim YH, Park SH, Kwak JS.

J Nanosci Nanotechnol. 2011 May;11(5):4484-7.

PMID:
21780482
7.

Light outcoupling effect in GaN light-emitting diodes via convex microstructures monolithically fabricated on sapphire substrate.

Oh TS, Jeong H, Lee YS, Park AH, Seo TH, Kim H, Lee KJ, Jeong MS, Suh EK.

Opt Express. 2011 May 9;19(10):9385-91. doi: 10.1364/OE.19.009385.

PMID:
21643195
8.

Improved light extraction efficiency in GaN-based light emitting diode by nano-scale roughening of p-GaN surface.

Park SJ, Sadasivam KG, Chung TH, Hong GC, Kim JB, Kim SM, Park SH, Jeon SR, Lee JK.

J Nanosci Nanotechnol. 2008 Oct;8(10):5393-7.

PMID:
19198463
9.

Light extraction efficiency analysis of GaN-based light-emitting diodes with nanopatterned sapphire substrates.

Pan JW, Tsai PJ, Chang KD, Chang YY.

Appl Opt. 2013 Mar 1;52(7):1358-67. doi: 10.1364/AO.52.001358.

PMID:
23458786
10.

High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask.

Cho CY, Kwon MK, Park IK, Hong SH, Kim JJ, Park SE, Kim ST, Park SJ.

Opt Express. 2011 Jul 4;19 Suppl 4:A943-8. doi: 10.1364/OE.19.00A943.

PMID:
21747565
11.
12.

Influence of the microstructure geometry of patterned sapphire substrates on the light extraction efficiency of GaN LEDs.

Kuo CT, Hsu LH, Huang BH, Kuo HC, Lin CC, Cheng YJ.

Appl Opt. 2016 Sep 10;55(26):7387-91. doi: 10.1364/AO.55.007387.

PMID:
27661378
13.

Nanopatterned aluminum nitride template for high efficiency light-emitting diodes.

Kim SM, Park TY, Park SJ, Lee SJ, Baek JH, Park YC, Jung GY.

Opt Express. 2009 Aug 17;17(17):14791-9.

PMID:
19687957
14.

Enhanced light extraction from a GaN-based green light-emitting diode with hemicylindrical linear grating structure.

Jin Y, Yang F, Li Q, Zhu Z, Zhu J, Fan S.

Opt Express. 2012 Jul 2;20(14):15818-25. doi: 10.1364/OE.20.015818.

PMID:
22772271
15.

Enhancement of Device Performances in GaN-Based Light-Emitting Diodes Using Nano-Sized Surface Pit.

Yeon S, Son T, Shin DS, Jung KY, Park J.

J Nanosci Nanotechnol. 2015 Jul;15(7):5211-4.

PMID:
26373108
16.

Fabrication of high-refractive-index microstructures and their applications to the efficiency improvement of GaN-based LEDs.

Lee YC, Chen CY, Chou YY.

Opt Express. 2011 Nov 7;19 Suppl 6:A1231-6. doi: 10.1364/OE.19.0A1231.

PMID:
22109619
17.

Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography.

Huang HW, Lin CH, Yu CC, Lee BD, Chiu CH, Lai CF, Kuo HC, Leung KM, Lu TC, Wang SC.

Nanotechnology. 2008 May 7;19(18):185301. doi: 10.1088/0957-4484/19/18/185301. Epub 2008 Apr 1.

PMID:
21825687
18.

Microscale hemisphere patterned backside mirror for GaN-based light-emitting diodes.

Huang H, Hu H, Wang H, Geng K.

Appl Opt. 2015 Nov 20;54(33):9791-8. doi: 10.1364/AO.54.009791.

PMID:
26836539
19.

The fabrication of a patterned ZnO nanorod array for high brightness LEDs.

Park H, Byeon KJ, Yang KY, Cho JY, Lee H.

Nanotechnology. 2010 Sep 3;21(35):355304. doi: 10.1088/0957-4484/21/35/355304. Epub 2010 Aug 6.

PMID:
20689168
20.

Improving the optical performance of InGaN light-emitting diodes by altering light reflection and refraction with triangular air prism arrays.

Kang JH, Kim HG, Chandramohan S, Kim HK, Kim HY, Ryu JH, Park YJ, Beak YS, Lee JS, Park JS, Lysak VV, Hong CH.

Opt Lett. 2012 Jan 1;37(1):88-90. doi: 10.1364/OL.37.000088.

PMID:
22212800

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