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Items: 1 to 20 of 160

1.

Defect-free <110> zinc-blende structured InAs nanowires catalyzed by palladium.

Xu H, Wang Y, Guo Y, Liao Z, Gao Q, Tan HH, Jagadish C, Zou J.

Nano Lett. 2012 Nov 14;12(11):5744-9. doi: 10.1021/nl303028u. Epub 2012 Oct 5.

PMID:
23030768
2.

All zinc-blende GaAs/(Ga,Mn)As core-shell nanowires with ferromagnetic ordering.

Yu X, Wang H, Pan D, Zhao J, Misuraca J, von Molnár S, Xiong P.

Nano Lett. 2013 Apr 10;13(4):1572-7. doi: 10.1021/nl304740k. Epub 2013 Mar 26.

PMID:
23517546
3.

Catalyst orientation-induced growth of defect-free zinc-blende structured ⟨001̅⟩ InAs nanowires.

Zhang Z, Zheng K, Lu ZY, Chen PP, Lu W, Zou J.

Nano Lett. 2015 Feb 11;15(2):876-82. doi: 10.1021/nl503556a. Epub 2015 Jan 15.

PMID:
25580886
4.

From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires.

Potts H, Friedl M, Amaduzzi F, Tang K, Tütüncüoglu G, Matteini F, Alarcon Lladó E, McIntyre PC, Fontcuberta i Morral A.

Nano Lett. 2016 Jan 13;16(1):637-43. doi: 10.1021/acs.nanolett.5b04367. Epub 2015 Dec 22.

5.

Coexistence of vapor-liquid-solid and vapor-solid-solid growth modes in Pd-assisted InAs nanowires.

Heun S, Radha B, Ercolani D, Kulkarni GU, Rossi F, Grillo V, Salviati G, Beltram F, Sorba L.

Small. 2010 Sep 6;6(17):1935-41. doi: 10.1002/smll.201000811.

PMID:
20662001
6.

Dynamic process of phase transition from wurtzite to zinc blende structure in InAs nanowires.

Zheng H, Wang J, Huang JY, Wang J, Zhang Z, Mao SX.

Nano Lett. 2013;13(12):6023-7. doi: 10.1021/nl403240r. Epub 2013 Nov 27.

PMID:
24274356
7.

Effects of crystal phase mixing on the electrical properties of InAs nanowires.

Thelander C, Caroff P, Plissard S, Dey AW, Dick KA.

Nano Lett. 2011 Jun 8;11(6):2424-9. doi: 10.1021/nl2008339. Epub 2011 Apr 29.

PMID:
21528899
8.

The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.

Thelander C, Dick KA, Borgström MT, Fröberg LE, Caroff P, Nilsson HA, Samuelson L.

Nanotechnology. 2010 May 21;21(20):205703. doi: 10.1088/0957-4484/21/20/205703. Epub 2010 Apr 23.

PMID:
20413840
9.

InAs nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) employing PS/PMMA diblock copolymer nanopatterning.

Huang Y, Kim TW, Xiong S, Mawst LJ, Kuech TF, Nealey PF, Dai Y, Wang Z, Guo W, Forbes D, Hubbard SM, Nesnidal M.

Nano Lett. 2013;13(12):5979-84. doi: 10.1021/nl403163x. Epub 2013 Dec 2.

PMID:
24274630
10.

Growth of vertical InAs nanowires on heterostructured substrates.

Roddaro S, Caroff P, Biasiol G, Rossi F, Bocchi C, Nilsson K, Fröberg L, Wagner JB, Samuelson L, Wernersson LE, Sorba L.

Nanotechnology. 2009 Jul 15;20(28):285303. doi: 10.1088/0957-4484/20/28/285303. Epub 2009 Jun 23.

PMID:
19546499
11.

Structural phase control in self-catalyzed growth of GaAs nanowires on silicon (111).

Krogstrup P, Popovitz-Biro R, Johnson E, Madsen MH, Nygård J, Shtrikman H.

Nano Lett. 2010 Nov 10;10(11):4475-82. doi: 10.1021/nl102308k. Epub 2010 Oct 8. Erratum in: Nano Lett. 2011 Feb 9;11(2):918.

PMID:
20932012
12.

Friction measurements of InAs nanowires on silicon nitride by AFM manipulation.

Conache G, Gray SM, Ribayrol A, Fröberg LE, Samuelson L, Pettersson H, Montelius L.

Small. 2009 Feb;5(2):203-7. doi: 10.1002/smll.200800794. No abstract available.

PMID:
19058284
13.

Simultaneous integration of different nanowires on single textured Si (100) substrates.

Rieger T, Rosenbach D, Mussler G, Schäpers T, Grützmacher D, Lepsa MI.

Nano Lett. 2015 Mar 11;15(3):1979-86. doi: 10.1021/nl504854v. Epub 2015 Feb 9.

PMID:
25650521
14.

Au-free epitaxial growth of InAs nanowires.

Mandl B, Stangl J, Mårtensson T, Mikkelsen A, Eriksson J, Karlsson LS, Bauer GU, Samuelson L, Seifert W.

Nano Lett. 2006 Aug;6(8):1817-21.

PMID:
16895379
15.

Evolution of epitaxial InAs nanowires on GaAs 111B.

Zhang X, Zou J, Paladugu M, Guo Y, Wang Y, Kim Y, Joyce HJ, Gao Q, Tan HH, Jagadish C.

Small. 2009 Mar;5(3):366-9. doi: 10.1002/smll.200800690. No abstract available.

PMID:
19152357
16.

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.

Joyce HJ, Docherty CJ, Gao Q, Tan HH, Jagadish C, Lloyd-Hughes J, Herz LM, Johnston MB.

Nanotechnology. 2013 May 31;24(21):214006. doi: 10.1088/0957-4484/24/21/214006. Epub 2013 Apr 25.

PMID:
23619012
17.

van der Waals epitaxy of InAs nanowires vertically aligned on single-layer graphene.

Hong YJ, Lee WH, Wu Y, Ruoff RS, Fukui T.

Nano Lett. 2012 Mar 14;12(3):1431-6. doi: 10.1021/nl204109t. Epub 2012 Feb 14.

PMID:
22324301
18.

Defect-free zinc-blende structured InAs nanowires realized by in situ two V/III ratio growth in molecular beam epitaxy.

Zhang Z, Lu ZY, Chen PP, Lu W, Zou J.

Nanoscale. 2015 Aug 7;7(29):12592-7. doi: 10.1039/c5nr03503a. Epub 2015 Jul 6.

PMID:
26145435
19.

In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires.

Heiss M, Ketterer B, Uccelli E, Morante JR, Arbiol J, Fontcuberta i Morral A.

Nanotechnology. 2011 May 13;22(19):195601. doi: 10.1088/0957-4484/22/19/195601. Epub 2011 Mar 23.

PMID:
21430322
20.

Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy.

Lugani L, Ercolani D, Sorba L, Sibirev NV, Timofeeva MA, Dubrovskii VG.

Nanotechnology. 2012 Mar 9;23(9):095602. doi: 10.1088/0957-4484/23/9/095602. Epub 2012 Feb 10.

PMID:
22322330

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