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Items: 1 to 20 of 189

1.

Crossover from spin accumulation into interface states to spin injection in the germanium conduction band.

Jain A, Rojas-Sanchez JC, Cubukcu M, Peiro J, Le Breton JC, Prestat E, Vergnaud C, Louahadj L, Portemont C, Ducruet C, Baltz V, Barski A, Bayle-Guillemaud P, Vila L, Attané JP, Augendre E, Desfonds G, Gambarelli S, Jaffrès H, George JM, Jamet M.

Phys Rev Lett. 2012 Sep 7;109(10):106603.

PMID:
23005314
2.

Spin transport in p-type germanium.

Rortais F, Oyarzún S, Bottegoni F, Rojas-Sánchez JC, Laczkowski P, Ferrari A, Vergnaud C, Ducruet C, Beigné C, Reyren N, Marty A, Attané JP, Vila L, Gambarelli S, Widiez J, Ciccacci F, Jaffrès H, George JM, Jamet M.

J Phys Condens Matter. 2016 Apr 27;28(16):165801. doi: 10.1088/0953-8984/28/16/165801.

PMID:
26988255
3.

Half metallic ferromagnets.

Dowben P.

J Phys Condens Matter. 2007 Aug 8;19(31):310301. doi: 10.1088/0953-8984/19/31/310301.

PMID:
21694101
4.

Experimental Demonstration of Room-Temperature Spin Transport in n-Type Germanium Epilayers.

Dushenko S, Koike M, Ando Y, Shinjo T, Myronov M, Shiraishi M.

Phys Rev Lett. 2015 May 15;114(19):196602.

PMID:
26024188
5.

Efficient spin injection into silicon and the role of the Schottky barrier.

Dankert A, Dulal RS, Dash SP.

Sci Rep. 2013 Nov 12;3:3196. doi: 10.1038/srep03196.

6.

Enhancement of the spin accumulation at the interface between a spin-polarized tunnel junction and a semiconductor.

Tran M, Jaffrès H, Deranlot C, George JM, Fert A, Miard A, Lemaître A.

Phys Rev Lett. 2009 Jan 23;102(3):036601. Erratum in: Phys Rev Lett. 2011 Dec 9;107(24):249901.

PMID:
19257375
7.

Low-resistance spin injection into silicon using graphene tunnel barriers.

van 't Erve OM, Friedman AL, Cobas E, Li CH, Robinson JT, Jonker BT.

Nat Nanotechnol. 2012 Nov;7(11):737-42. doi: 10.1038/nnano.2012.161.

PMID:
23023645
8.

Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance.

Liu C, Patel SJ, Peterson TA, Geppert CC, Christie KD, Stecklein G, Palmstrøm CJ, Crowell PA.

Nat Commun. 2016 Jan 18;7:10296. doi: 10.1038/ncomms10296.

9.

Interface-induced topological insulator transition in GaAs/Ge/GaAs quantum wells.

Zhang D, Lou W, Miao M, Zhang SC, Chang K.

Phys Rev Lett. 2013 Oct 11;111(15):156402.

PMID:
24160616
10.

Electrical creation of spin polarization in silicon at room temperature.

Dash SP, Sharma S, Patel RS, de Jong MP, Jansen R.

Nature. 2009 Nov 26;462(7272):491-4. doi: 10.1038/nature08570.

PMID:
19940922
11.

Demonstration of the spin solar cell and spin photodiode effect.

Endres B, Ciorga M, Schmid M, Utz M, Bougeard D, Weiss D, Bayreuther G, Back CH.

Nat Commun. 2013;4:2068. doi: 10.1038/ncomms3068.

12.
13.

Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal/silicon dioxide contacts.

Li CH, van 't Erve OM, Jonker BT.

Nat Commun. 2011;2:245. doi: 10.1038/ncomms1256.

PMID:
21427716
14.

Ferromagnetic Resonance Spin Pumping and Electrical Spin Injection in Silicon-Based Metal-Oxide-Semiconductor Heterostructures.

Pu Y, Odenthal PM, Adur R, Beardsley J, Swartz AG, Pelekhov DV, Flatté ME, Kawakami RK, Pelz J, Hammel PC, Johnston-Halperin E.

Phys Rev Lett. 2015 Dec 11;115(24):246602. doi: 10.1103/PhysRevLett.115.246602.

PMID:
26705647
15.

Evidence for spin-to-charge conversion by Rashba coupling in metallic states at the Fe/Ge(111) interface.

Oyarzún S, Nandy AK, Rortais F, Rojas-Sánchez JC, Dau MT, Noël P, Laczkowski P, Pouget S, Okuno H, Vila L, Vergnaud C, Beigné C, Marty A, Attané JP, Gambarelli S, George JM, Jaffrès H, Blügel S, Jamet M.

Nat Commun. 2016 Dec 15;7:13857. doi: 10.1038/ncomms13857.

16.

Electrical spin injection and detection in Mn5Ge3/Ge/Mn5Ge3 nanowire transistors.

Tang J, Wang CY, Chang LT, Fan Y, Nie T, Chan M, Jiang W, Chen YT, Yang HJ, Tuan HY, Chen LJ, Wang KL.

Nano Lett. 2013 Sep 11;13(9):4036-43. doi: 10.1021/nl401238p.

PMID:
23937588
17.

Lateral spin injection in germanium nanowires.

Liu ES, Nah J, Varahramyan KM, Tutuc E.

Nano Lett. 2010 Sep 8;10(9):3297-301. doi: 10.1021/nl1008663. Erratum in: Nano Lett. 2011 Sep 14;11(9):4027.

PMID:
20707379
19.

Electronic measurement and control of spin transport in silicon.

Appelbaum I, Huang B, Monsma DJ.

Nature. 2007 May 17;447(7142):295-8.

PMID:
17507978
20.

Electrically tunable spin injector free from the impedance mismatch problem.

Ando K, Takahashi S, Ieda J, Kurebayashi H, Trypiniotis T, Barnes CH, Maekawa S, Saitoh E.

Nat Mater. 2011 Jun 26;10(9):655-9. doi: 10.1038/nmat3052.

PMID:
21706009
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