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Items: 1 to 20 of 93

1.

Stability, interaction and influence of domain boundaries in Ge/Si(111)-5 × 5.

Ondráček M, Mutombo P, Chvoj Z, Mark AG, Chromcová Z, McLean AB, Jelínek P.

J Phys Condens Matter. 2012 Nov 7;24(44):445003. doi: 10.1088/0953-8984/24/44/445003.

PMID:
22989989
2.

Reinvestigation of the alkali-metal-induced Ge(111)3 × 1 reconstruction on the basis of boundary structure observations.

Tomaszewska A, Shim H, Ahn C, Lee G.

Ultramicroscopy. 2011 May;111(6):392-6. doi: 10.1016/j.ultramic.2010.09.009.

PMID:
21035266
3.

Electronic and atomic structure of Ba8Ga16Ge(30-x)Si(x) type I clathrates: Ge and Ga XAFS study.

Mansour AN, Martin J, Wong-Ng W, Nolas GS.

J Phys Condens Matter. 2012 Dec 5;24(48):485503. doi: 10.1088/0953-8984/24/48/485503.

PMID:
23139227
4.

The influence of a Si cantilever tip with/without tungsten coating on noncontact atomic force microscopy imaging of a Ge(001) surface.

Naitoh Y, Kinoshita Y, Jun Li Y, Kageshima M, Sugawara Y.

Nanotechnology. 2009 Jul 1;20(26):264011. doi: 10.1088/0957-4484/20/26/264011.

PMID:
19509444
5.
6.

Electronic stabilization of the Si(111)5 × 2-Au surface: Pb and Si adatoms.

Stępniak A, Krawiec M, Zawadzki G, Jałochowski M.

J Phys Condens Matter. 2012 Mar 7;24(9):095002. doi: 10.1088/0953-8984/24/9/095002.

PMID:
22274993
7.

Structural and electronic properties of Si(n), Ge(n), and Si(n)Ge(n) clusters.

ur Rehman H, Springborg M, Dong Y.

J Phys Chem A. 2011 Mar 17;115(10):2005-15. doi: 10.1021/jp109198r. Erratum in: J Phys Chem A. 2011 Dec 15;115(49):14233.

PMID:
21338159
8.

Nonthermal plasma synthesized freestanding silicon-germanium alloy nanocrystals.

Pi XD, Kortshagen U.

Nanotechnology. 2009 Jul 22;20(29):295602. doi: 10.1088/0957-4484/20/29/295602.

PMID:
19567968
9.
10.

Proceedings of the Second Workshop on Theory meets Industry (Erwin-Schrödinger-Institute (ESI), Vienna, Austria, 12-14 June 2007).

Hafner J.

J Phys Condens Matter. 2008 Feb 13;20(6):060301. doi: 10.1088/0953-8984/20/06/060301.

PMID:
21693862
11.

Gd5-xYxTt4 (Tt = Si or Ge): effect of metal substitution on structure, bonding, and magnetism.

Misra S, Miller GJ.

J Am Chem Soc. 2008 Oct 22;130(42):13900-11. doi: 10.1021/ja802848r.

PMID:
18817384
12.

Electronic properties of Fibonacci and random Si-Ge chains.

Vasconcelos MS, Azevedo DL, Hadad A, Galvão DS.

J Phys Condens Matter. 2011 Oct 12;23(40):405501. doi: 10.1088/0953-8984/23/40/405501.

PMID:
21937784
13.

Experimental investigation of the electronic structure of Gd(5)Ge(2)Si(2) by photoemission and x-ray absorption spectroscopy.

Bondino F, Brinkman A, Zangrando M, Carbone F, van der Marel D, Schlagel DL, Lograsso TA, Gschneidner KA, Pecharsky VK, Parmigiani F.

J Phys Condens Matter. 2007 May 8;19(18):186219. doi: 10.1088/0953-8984/19/18/186219.

PMID:
21691000
14.

Atomic structure of the Ag/Ge(111)-(sq.rt.(3) x sq.rt.(3)) surface: From scanning tunneling microscopy observation to theoretical study.

Chou LW, Wu HC, Lee YR, Jiang JC, Su C, Lin JC.

J Chem Phys. 2009 Dec 14;131(22):224705. doi: 10.1063/1.3268776.

PMID:
20001074
15.

Structural and electronic properties of Al12X+ (X=C, Si, Ge, Sn, and Pb) clusters.

Chen G, Kawazoe Y.

J Chem Phys. 2007 Jan 7;126(1):014703.

PMID:
17212507
16.

Hydrothermal growth and structural studies of Si(1-x)Ge(x)O2 single crystals.

Ranieri V, Darracq S, Cambon M, Haines J, Cambon O, Largeteau A, Demazeau G.

Inorg Chem. 2011 May 16;50(10):4632-9. doi: 10.1021/ic200354p.

PMID:
21504186
18.

Diameter-dependent composition of vapor-liquid-solid grown Si(1-x)Ge(x) nanowires.

Zhang X, Lew KK, Nimmatoori P, Redwing JM, Dickey EC.

Nano Lett. 2007 Oct;7(10):3241-5.

PMID:
17894516
19.

Chemical pressure and rare-earth orbital contributions in mixed rare-earth silicides La(5-x)Y(x)Si4 (0 ≤ x ≤ 5).

Wang H, Wang F, Jones K, Miller GJ.

Inorg Chem. 2011 Dec 19;50(24):12714-23. doi: 10.1021/ic201840q.

PMID:
22107481
20.

Synthesis of butane-like SiGe hydrides: enabling precursors for CVD of Ge-rich semiconductors.

Chizmeshya AV, Ritter CJ, Hu C, Tice JB, Tolle J, Nieman RA, Tsong IS, Kouvetakis J.

J Am Chem Soc. 2006 May 31;128(21):6919-30.

PMID:
16719472

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