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Items: 1 to 20 of 142

1.

Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks.

Park YS, Holmes MJ, Taylor RA, Kim KS, Lee SW, Ju H, Im H.

Nanotechnology. 2012 Oct 12;23(40):405602. Epub 2012 Sep 14. Erratum in: Nanotechnology. 2012 Dec 14;23(49):499502.

PMID:
22983732
2.

Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode.

Jung BO, Bae SY, Lee S, Kim SY, Lee JY, Honda Y, Amano H.

Nanoscale Res Lett. 2016 Dec;11(1):215. doi: 10.1186/s11671-016-1441-6. Epub 2016 Apr 22.

3.

Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires.

Kehagias T, Dimitrakopulos GP, Becker P, Kioseoglou J, Furtmayr F, Koukoula T, Häusler I, Chernikov A, Chatterjee S, Karakostas T, Solowan HM, Schwarz UT, Eickhoff M, Komninou P.

Nanotechnology. 2013 Nov 1;24(43):435702. doi: 10.1088/0957-4484/24/43/435702. Epub 2013 Sep 27.

PMID:
24076624
4.

Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells.

Bergbauer W, Strassburg M, Kölper Ch, Linder N, Roder C, Lähnemann J, Trampert A, Fündling S, Li SF, Wehmann HH, Waag A.

Nanotechnology. 2010 Jul 30;21(30):305201. doi: 10.1088/0957-4484/21/30/305201. Epub 2010 Jul 6.

PMID:
20603534
5.

Nanoscopic Insights into InGaN/GaN Core-Shell Nanorods: Structure, Composition, and Luminescence.

Müller M, Veit P, Krause FF, Schimpke T, Metzner S, Bertram F, Mehrtens T, Müller-Caspary K, Avramescu A, Strassburg M, Rosenauer A, Christen J.

Nano Lett. 2016 Sep 14;16(9):5340-6. doi: 10.1021/acs.nanolett.6b01062. Epub 2016 Aug 16.

PMID:
27517307
6.

Self-assembled GaN nanowires on diamond.

Schuster F, Furtmayr F, Zamani R, Magén C, Morante JR, Arbiol J, Garrido JA, Stutzmann M.

Nano Lett. 2012 May 9;12(5):2199-204. doi: 10.1021/nl203872q. Epub 2012 Apr 18.

PMID:
22506554
7.

Geometry and composition comparisons between c-plane disc-like and m-plane core-shell InGaN/GaN quantum wells in a nitride nanorod.

Liao CH, Chang WM, Chen HS, Chen CY, Yao YF, Chen HT, Su CY, Ting SY, Kiang YW, Yang CC.

Opt Express. 2012 Jul 2;20(14):15859-71. doi: 10.1364/OE.20.015859.

PMID:
22772276
8.

Single nanowire light-emitting diodes using uniaxial and coaxial InGaN/GaN multiple quantum wells synthesized by metalorganic chemical vapor deposition.

Ra YH, Navamathavan R, Yoo HI, Lee CR.

Nano Lett. 2014 Mar 12;14(3):1537-45. doi: 10.1021/nl404794v. Epub 2014 Feb 25.

PMID:
24564712
9.

Interplay of strain and indium incorporation in InGaN/GaN dot-in-a-wire nanostructures by scanning transmission electron microscopy.

Woo SY, Gauquelin N, Nguyen HP, Mi Z, Botton GA.

Nanotechnology. 2015 Aug 28;26(34):344002. doi: 10.1088/0957-4484/26/34/344002. Epub 2015 Aug 3.

PMID:
26234582
10.

Nanoscale imaging of InN segregation and polymorphism in single vertically aligned InGaN/GaN multi quantum well nanorods by tip-enhanced Raman scattering.

Poliani E, Wagner MR, Reparaz JS, Mandl M, Strassburg M, Kong X, Trampert A, Sotomayor Torres CM, Hoffmann A, Maultzsch J.

Nano Lett. 2013 Jul 10;13(7):3205-12. doi: 10.1021/nl401277y. Epub 2013 Jun 28.

PMID:
23795596
11.

Strain Driven Shape Evolution of Stacked (In,Ga)N Quantum Disks Embedded in GaN Nanowires.

Bartolomé J, Hanke M, van Treeck D, Trampert A.

Nano Lett. 2017 Aug 9;17(8):4654-4660. doi: 10.1021/acs.nanolett.7b01136. Epub 2017 Jul 27.

PMID:
28735548
12.

Dependencies of the emission behavior and quantum well structure of a regularly-patterned, InGaN/GaN quantum-well nanorod array on growth condition.

Liao CH, Tu CG, Chang WM, Su CY, Shih PY, Chen HT, Yao YF, Hsieh C, Chen HS, Lin CH, Yu CK, Kiang YW, Yang CC.

Opt Express. 2014 Jul 14;22(14):17303-19. doi: 10.1364/OE.22.017303.

PMID:
25090544
13.

Quantum confined Stark effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods.

Park YS, Holmes MJ, Kang TW, Taylor RA.

Nanotechnology. 2010 Mar 19;21(11):115401. doi: 10.1088/0957-4484/21/11/115401. Epub 2010 Feb 22.

PMID:
20173227
14.

Self-assembled GaN quantum wires on GaN/AlN nanowire templates.

Arbiol J, Magen C, Becker P, Jacopin G, Chernikov A, Schäfer S, Furtmayr F, Tchernycheva M, Rigutti L, Teubert J, Chatterjee S, Morante JR, Eickhoff M.

Nanoscale. 2012 Dec 7;4(23):7517-24. doi: 10.1039/c2nr32173d.

PMID:
23100169
15.

Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods.

Conroy M, Li H, Kusch G, Zhao C, Ooi B, Edwards PR, Martin RW, Holmes JD, Parbrook PJ.

Nanoscale. 2016 Jun 7;8(21):11019-26. doi: 10.1039/c6nr00116e. Epub 2016 May 13.

PMID:
27174084
16.

Effect of strain relaxation in InGaN/GaN multi-quantum wells with self-assembled Pt nanoclusters.

Park AH, Oh TS, Seo TH, Lee SB, Lee GH, Suh EK.

J Nanosci Nanotechnol. 2014 Nov;14(11):8347-51.

PMID:
25958526
17.

Light-emitting diode based on mask- and catalyst-free grown N-polar GaN nanorods.

Kunert G, Freund W, Aschenbrenner T, Kruse C, Figge S, Schowalter M, Rosenauer A, Kalden J, Sebald K, Gutowski J, Feneberg M, Tischer I, Fujan K, Thonke K, Hommel D.

Nanotechnology. 2011 Jul 1;22(26):265202. doi: 10.1088/0957-4484/22/26/265202. Epub 2011 May 17.

PMID:
21576780
18.

Growth of semipolar InGaN quantum well structure using self-organized nano-masks on m-sapphire.

Ryu Y, Jeong J, Jang J, Lee K, Min D, Kim J, Kim M, Moon S, Yoo G, Nam O.

J Nanosci Nanotechnol. 2013 Sep;13(9):6429-33.

PMID:
24205676
19.

Nanometer scale fabrication and optical response of InGaN/GaN quantum disks.

Lai YC, Higo A, Kiba T, Thomas C, Chen S, Lee CY, Tanikawa T, Kuboya S, Katayama R, Shojiki K, Takayama J, Yamashita I, Murayama A, Chi GC, Yu P, Samukawa S.

Nanotechnology. 2016 Oct 21;27(42):425401. doi: 10.1088/0957-4484/27/42/425401. Epub 2016 Sep 15.

PMID:
27632684
20.

Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires.

Puchtler TJ, Wang T, Ren CX, Tang F, Oliver RA, Taylor RA, Zhu T.

Nano Lett. 2016 Dec 14;16(12):7779-7785. Epub 2016 Dec 5.

PMID:
27960480

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