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Items: 1 to 20 of 181

1.
2.
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The effects of nanometal-induced crystallization on the electrical characteristics of bottom-gate poly-Si thin-film transistors.

Lee IC, Yang PY, Hu MJ, Wang JL, Tsai CC, Chang CT, Cheng HC.

J Nanosci Nanotechnol. 2011 Jul;11(7):5612-7.

PMID:
22121579
4.

High-performance ZnO thin-film transistors with location-controlled crystal grains fabricated by low-temperature hydrothermal method.

Yang PY, Wang JL, Tsai WC, Chang YC, Wang SJ, Lee IC, Wang CL, Chien YS, Cheng HC.

J Nanosci Nanotechnol. 2012 Jul;12(7):5783-7.

PMID:
22966654
5.

Near-infrared femtosecond laser crystallized poly-Si thin film transistors.

Wang YC, Shieh JM, Zan HW, Pan CL.

Opt Express. 2007 May 28;15(11):6982-7.

PMID:
19547013
6.

Fabrication of high performance thin-film transistors via pressure-induced nucleation.

Kang MK, Kim SJ, Kim HJ.

Sci Rep. 2014 Oct 31;4:6858. doi: 10.1038/srep06858.

7.

High performance thin film transistor with ZnO channel layer deposited by DC magnetron sputtering.

Moon YK, Moon DY, Lee SH, Jeong CO, Park JW.

J Nanosci Nanotechnol. 2008 Sep;8(9):4557-60.

PMID:
19049057
8.

Solution-processed silicon films and transistors.

Shimoda T, Matsuki Y, Furusawa M, Aoki T, Yudasaka I, Tanaka H, Iwasawa H, Wang D, Miyasaka M, Takeuchi Y.

Nature. 2006 Apr 6;440(7085):783-6.

PMID:
16598254
9.

Solution-Based Fabrication of Polycrystalline Si Thin-Film Transistors from Recycled Polysilanes.

Sberna PM, Trifunovic M, Ishihara R.

ACS Sustain Chem Eng. 2017 Jul 3;5(7):5642-5645. doi: 10.1021/acssuschemeng.7b00626. Epub 2017 Jun 11.

10.

Capacitorless 1T-DRAM on crystallized poly-Si TFT.

Kim MS, Cho WJ.

J Nanosci Nanotechnol. 2011 Jul;11(7):5608-11.

PMID:
22121578
11.

Formation of silicon nanoparticles by a pressure induced nucleation mechanism.

Kang MK, Kim SJ, Kim HJ.

Nanoscale. 2013 Apr 21;5(8):3266-71. doi: 10.1039/c3nr34178j. Epub 2013 Mar 6.

PMID:
23467641
12.

Characterization of crystallographic properties of SMC poly Si using electron backscattered diffraction.

Kim DI, Oh KH, Lee HC, Chang YJ, Sohn WS, Jang J.

J Microsc. 2004 Aug;215(Pt 2):121-6.

13.

High-performance thin-film transistors using semiconductor nanowires and nanoribbons.

Duan X, Niu C, Sahi V, Chen J, Parce JW, Empedocles S, Goldman JL.

Nature. 2003 Sep 18;425(6955):274-8.

PMID:
13679911
14.

Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing.

Machida E, Horita M, Ishikawa Y, Uraoka Y, Ikenoue H.

Appl Phys Lett. 2012 Dec 17;101(25):252106. Epub 2012 Dec 19.

15.

Lamination method for the study of interfaces in polymeric thin film transistors.

Chabinyc ML, Salleo A, Wu Y, Liu P, Ong BS, Heeney M, McCulloch I.

J Am Chem Soc. 2004 Nov 3;126(43):13928-9.

PMID:
15506746
16.

Electrical stress effect on the leakage current of metal-induced laterally crystallized p-channel poly-Si TFTs.

Byun CW, Lee SJ, Yun SJ, Joo SK.

J Nanosci Nanotechnol. 2012 Apr;12(4):3682-7.

PMID:
22849196
17.

High performance transparent in-plane silicon nanowire Fin-TFTs via a robust nano-droplet-scanning crystallization dynamics.

Xu M, Wang J, Xue Z, Wang J, Feng P, Yu L, Xu J, Shi Y, Chen K, Roca I Cabarrocas P.

Nanoscale. 2017 Jul 27;9(29):10350-10357. doi: 10.1039/c7nr02825c.

PMID:
28702558
18.
19.

Mechanisms of aluminium-induced crystallization and layer exchange upon low-temperature annealing of amorphous Si/polycrystalline Al bilayers.

Wang JY, Wang ZM, Jeurgens LP, Mittemeijer EJ.

J Nanosci Nanotechnol. 2009 Jun;9(6):3364-71.

PMID:
19504855
20.

Morphological and structural effects of excimer laser treatment of amorphous silicon

Loreti S, della Sala D, Garozzo M.

Micron. 2000 Jun;31(3):299-307.

PMID:
10702980

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