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Items: 1 to 20 of 293

1.

Co-integration of nano-scale vertical- and horizontal-channel metal-oxide-semiconductor field-effect transistors for low power CMOS technology.

Sun MC, Kim G, Kim SW, Kim HW, Kim H, Lee JH, Shin H, Park BG.

J Nanosci Nanotechnol. 2012 Jul;12(7):5313-7.

PMID:
22966563
2.

Few electron limit of n-type metal oxide semiconductor single electron transistors.

Prati E, De Michielis M, Belli M, Cocco S, Fanciulli M, Kotekar-Patil D, Ruoff M, Kern DP, Wharam DA, Verduijn J, Tettamanzi GC, Rogge S, Roche B, Wacquez R, Jehl X, Vinet M, Sanquer M.

Nanotechnology. 2012 Jun 1;23(21):215204. doi: 10.1088/0957-4484/23/21/215204.

PMID:
22552118
3.
4.

Reconfigurable silicon nanowire transistors.

Heinzig A, Slesazeck S, Kreupl F, Mikolajick T, Weber WM.

Nano Lett. 2012 Jan 11;12(1):119-24. doi: 10.1021/nl203094h. Epub 2011 Dec 1.

PMID:
22111808
5.

The large-scale integration of high-performance silicon nanowire field effect transistors.

Li Q, Zhu X, Yang Y, Ioannou DE, Xiong HD, Kwon DW, Suehle JS, Richter CA.

Nanotechnology. 2009 Oct 14;20(41):415202. doi: 10.1088/0957-4484/20/41/415202. Epub 2009 Sep 16.

PMID:
19755723
6.

Metal-insulator-silicon-insulator-metal waveguides compatible with standard CMOS technology.

Kwon MS.

Opt Express. 2011 Apr 25;19(9):8379-93. doi: 10.1364/OE.19.008379.

PMID:
21643089
7.

Full recess integration of small diameter low threshold VCSELs within Si-CMOS ICs.

Perkins JM, Simpkins TL, Warde C, Fonstad CG Jr.

Opt Express. 2008 Sep 1;16(18):13955-60.

PMID:
18773006
8.

Fabrication of poly-silicon nano-wire transistors on plastic substrates.

Park C, Lee S, Choi M, Kang M, Jung Y, Hwang S, Ahn D, Lee J, Song C.

J Nanosci Nanotechnol. 2007 Nov;7(11):4150-3.

PMID:
18047139
9.

Enhanced channel modulation in dual-gated silicon nanowire transistors.

Koo SM, Li Q, Edelstein MD, Richter CA, Vogel EM.

Nano Lett. 2005 Dec;5(12):2519-23.

PMID:
16351207
10.
11.

Issues of nanoelectronics: a possible roadmap.

Wang KL.

J Nanosci Nanotechnol. 2002 Jun-Aug;2(3-4):235-66. Review.

PMID:
12908252
12.

CMOS-analogous wafer-scale nanotube-on-insulator approach for submicrometer devices and integrated circuits using aligned nanotubes.

Ryu K, Badmaev A, Wang C, Lin A, Patil N, Gomez L, Kumar A, Mitra S, Wong HS, Zhou C.

Nano Lett. 2009 Jan;9(1):189-97. doi: 10.1021/nl802756u.

PMID:
19086836
13.

Integrated circuits and logic operations based on single-layer MoS2.

Radisavljevic B, Whitwick MB, Kis A.

ACS Nano. 2011 Dec 27;5(12):9934-8. doi: 10.1021/nn203715c. Epub 2011 Nov 10. Erratum in: ACS Nano. 2013 Apr 23;7(4):3729.

PMID:
22073905
14.

Subnanowatt carbon nanotube complementary logic enabled by threshold voltage control.

Geier ML, Prabhumirashi PL, McMorrow JJ, Xu W, Seo JW, Everaerts K, Kim CH, Marks TJ, Hersam MC.

Nano Lett. 2013 Oct 9;13(10):4810-4. doi: 10.1021/nl402478p. Epub 2013 Sep 12.

PMID:
24020970
15.

Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage.

Feng C, Yi M, Yu S, Hümmelgen IA, Zhang T, Ma D.

J Nanosci Nanotechnol. 2008 Apr;8(4):2037-43.

PMID:
18572611
16.

Programmable direct-printing nanowire electronic components.

Lee TI, Choi WJ, Moon KJ, Choi JH, Kar JP, Das SN, Kim YS, Baik HK, Myoung JM.

Nano Lett. 2010 Mar 10;10(3):1016-21. doi: 10.1021/nl904190y.

PMID:
20108927
17.

CMOS-compatible fabrication of room-temperature single-electron devices.

Ray V, Subramanian R, Bhadrachalam P, Ma LC, Kim CU, Koh SJ.

Nat Nanotechnol. 2008 Oct;3(10):603-8. doi: 10.1038/nnano.2008.267. Epub 2008 Sep 14.

PMID:
18838999
18.

Training and operation of an integrated neuromorphic network based on metal-oxide memristors.

Prezioso M, Merrikh-Bayat F, Hoskins BD, Adam GC, Likharev KK, Strukov DB.

Nature. 2015 May 7;521(7550):61-4. doi: 10.1038/nature14441.

PMID:
25951284
19.

Nanophotonic integration in state-of-the-art CMOS foundries.

Orcutt JS, Khilo A, Holzwarth CW, Popović MA, Li H, Sun J, Bonifield T, Hollingsworth R, Kärtner FX, Smith HI, Stojanović V, Ram RJ.

Opt Express. 2011 Jan 31;19(3):2335-46. doi: 10.1364/OE.19.002335.

PMID:
21369052
20.

Nanolasers grown on silicon-based MOSFETs.

Lu F, Tran TT, Ko WS, Ng KW, Chen R, Chang-Hasnain C.

Opt Express. 2012 May 21;20(11):12171-6. doi: 10.1364/OE.20.012171.

PMID:
22714204

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