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Items: 1 to 20 of 80

1.

Fabrication of magnetic artificial atoms.

Dengel RG, Frey A, Brunner K, Gould C, Molenkamp LW.

Nanotechnology. 2012 Oct 5;23(39):395301. doi: 10.1088/0957-4484/23/39/395301.

PMID:
22962261
2.

Gate-controlled quantum collimation in nanocolumn resonant tunneling transistors.

Wensorra J, Lepsa MI, Trellenkamp S, Moers J, Indlekofer KM, Lüth H.

Nanotechnology. 2009 Nov 18;20(46):465402. doi: 10.1088/0957-4484/20/46/465402.

PMID:
19844000
3.

Significant enhancement of the power conversion efficiency for organic photovoltaic cells due to a P3HT pillar layer containing ZnSe quantum dots.

Kim DH, Lee YH, Lee DU, Kim TW, Kim S, Kim SW.

Opt Express. 2012 May 7;20(10):10476-83. doi: 10.1364/OE.20.010476.

PMID:
22565672
4.

Top-gate ZnO nanowire transistors and integrated circuits with ultrathin self-assembled monolayer gate dielectric.

Kälblein D, Weitz RT, Böttcher HJ, Ante F, Zschieschang U, Kern K, Klauk H.

Nano Lett. 2011 Dec 14;11(12):5309-15. doi: 10.1021/nl202767h.

PMID:
22029286
5.
6.

Top-gated silicon nanowire transistors in a single fabrication step.

Colli A, Tahraoui A, Fasoli A, Kivioja JM, Milne WI, Ferrari AC.

ACS Nano. 2009 Jun 23;3(6):1587-93. doi: 10.1021/nn900284b.

PMID:
19425540
7.

Quantum capacitance limited vertical scaling of graphene field-effect transistor.

Xu H, Zhang Z, Wang Z, Wang S, Liang X, Peng LM.

ACS Nano. 2011 Mar 22;5(3):2340-7. doi: 10.1021/nn200026e.

PMID:
21323320
8.

A self-aligned single carbon nanotube field emission source fabricated by UV lithography.

Park S, Kim HC, Yum MH, Yang JH, Park CY, Chun K, Eom B.

Nanotechnology. 2008 Nov 5;19(44):445304. doi: 10.1088/0957-4484/19/44/445304.

PMID:
21832727
10.

Large-scale parallel arrays of silicon nanowires via block copolymer directed self-assembly.

Farrell RA, Kinahan NT, Hansel S, Stuen KO, Petkov N, Shaw MT, West LE, Djara V, Dunne RJ, Varona OG, Gleeson PG, Jung SJ, Kim HY, Koleśnik MM, Lutz T, Murray CP, Holmes JD, Nealey PF, Duesberg GS, Krstić V, Morris MA.

Nanoscale. 2012 May 21;4(10):3228-36. doi: 10.1039/c2nr00018k.

PMID:
22481430
11.

Self-aligned fabrication of graphene RF transistors with T-shaped gate.

Badmaev A, Che Y, Li Z, Wang C, Zhou C.

ACS Nano. 2012 Apr 24;6(4):3371-6. doi: 10.1021/nn300393c.

PMID:
22404336
12.

Organic field-effect transistors containing a SiO2 nanoparticle thin film as the gate dielectric.

Cui T, Liang G, Shi J.

J Nanosci Nanotechnol. 2003 Dec;3(6):526-8.

PMID:
15002134
13.

Few electron limit of n-type metal oxide semiconductor single electron transistors.

Prati E, De Michielis M, Belli M, Cocco S, Fanciulli M, Kotekar-Patil D, Ruoff M, Kern DP, Wharam DA, Verduijn J, Tettamanzi GC, Rogge S, Roche B, Wacquez R, Jehl X, Vinet M, Sanquer M.

Nanotechnology. 2012 Jun 1;23(21):215204. doi: 10.1088/0957-4484/23/21/215204.

PMID:
22552118
14.

Kinematic study of refraction properties of a ZnSe-ZnTe dielectric grating.

Reyes JC.

J Nanosci Nanotechnol. 2008 Dec;8(12):6589-92.

PMID:
19205245
15.

Imaging scarred states in quantum dots.

Burke AM, Akis R, Day T, Speyer G, Ferry DK, Bennett BR.

J Phys Condens Matter. 2009 May 27;21(21):212201. doi: 10.1088/0953-8984/21/21/212201.

PMID:
21825542
16.

Coplanar stripline antenna design for optically detected magnetic resonance on semiconductor quantum dots.

Klotz F, Huebl H, Heiss D, Klein K, Finley JJ, Brandt MS.

Rev Sci Instrum. 2011 Jul;82(7):074707. doi: 10.1063/1.3608110.

PMID:
21806214
17.

Issues of nanoelectronics: a possible roadmap.

Wang KL.

J Nanosci Nanotechnol. 2002 Jun-Aug;2(3-4):235-66. Review.

PMID:
12908252
18.

Enhanced 400-600 nm photoresponsivity of metal-oxide-semiconductor diodes with multi-stack germanium quantum dots.

Tzeng SS, Li PW.

Nanotechnology. 2008 Jun 11;19(23):235203. doi: 10.1088/0957-4484/19/23/235203.

PMID:
21825783
19.

Hybridization of electronic states in quantum dots through photon emission.

Karrai K, Warburton RJ, Schulhauser C, Högele A, Urbaszek B, McGhee EJ, Govorov AO, Garcia JM, Gerardot BD, Petroff PM.

Nature. 2004 Jan 8;427(6970):135-8.

PMID:
14712271
20.

Sub-10 nm crystalline silicon nanostructures by electron beam induced deposition lithography.

Sychugov I, Nakayama Y, Mitsuishi K.

Nanotechnology. 2010 Jul 16;21(28):285307. doi: 10.1088/0957-4484/21/28/285307.

PMID:
20585154
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