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Items: 1 to 20 of 148

1.

Stacking of 2D electron gases in Ge probed at the atomic level and its correlation to low-temperature magnetotransport.

Scappucci G, Klesse WM, Hamilton AR, Capellini G, Jaeger DL, Bischof MR, Reidy RF, Gorman BP, Simmons MY.

Nano Lett. 2012 Sep 12;12(9):4953-9. doi: 10.1021/nl302558b. Epub 2012 Sep 4.

PMID:
22935029
2.

New avenues to an old material: controlled nanoscale doping of germanium.

Scappucci G, Capellini G, Klesse WM, Simmons MY.

Nanoscale. 2013 Apr 7;5(7):2600-15. doi: 10.1039/c3nr34258a.

PMID:
23455600
3.

Epitaxial top-gated atomic-scale silicon wire in a three-dimensional architecture.

McKibbin SR, Scappucci G, Pok W, Simmons MY.

Nanotechnology. 2013 Feb 1;24(4):045303. doi: 10.1088/0957-4484/24/4/045303. Epub 2013 Jan 4.

PMID:
23291418
4.

A complete fabrication route for atomic-scale, donor-based devices in single-crystal germanium.

Scappucci G, Capellini G, Johnston B, Klesse WM, Miwa JA, Simmons MY.

Nano Lett. 2011 Jun 8;11(6):2272-9. doi: 10.1021/nl200449v. Epub 2011 May 10.

PMID:
21553900
5.

Role of confinement on carrier transport in Ge-Si(x)Ge(1-x) core-shell nanowires.

Nah J, Dillen DC, Varahramyan KM, Banerjee SK, Tutuc E.

Nano Lett. 2012 Jan 11;12(1):108-12. doi: 10.1021/nl2030695. Epub 2011 Dec 6.

PMID:
22111925
6.

The influence of deposition temperature on the correlation of Ge quantum dot positions in amorphous silica matrix.

Buljan M, Desnica UV, Drazić G, Ivanda M, Radić N, Dubcek P, Salamon K, Bernstorff S, Holý V.

Nanotechnology. 2009 Feb 25;20(8):085612. doi: 10.1088/0957-4484/20/8/085612. Epub 2009 Feb 3.

PMID:
19417460
7.

Three-dimensional Si/Ge quantum dot crystals.

Grützmacher D, Fromherz T, Dais C, Stangl J, Müller E, Ekinci Y, Solak HH, Sigg H, Lechner RT, Wintersberger E, Birner S, Holý V, Bauer G.

Nano Lett. 2007 Oct;7(10):3150-6. Epub 2007 Sep 25.

PMID:
17892317
8.

Diameter-dependent composition of vapor-liquid-solid grown Si(1-x)Ge(x) nanowires.

Zhang X, Lew KK, Nimmatoori P, Redwing JM, Dickey EC.

Nano Lett. 2007 Oct;7(10):3241-5. Epub 2007 Sep 26.

PMID:
17894516
9.

Surface disordered Ge-Si core-shell nanowires as efficient thermoelectric materials.

Markussen T.

Nano Lett. 2012 Sep 12;12(9):4698-704. doi: 10.1021/nl302061f. Epub 2012 Aug 20.

PMID:
22888828
10.

Directed synthesis of germanium oxide nanowires by vapor-liquid-solid oxidation.

Gunji M, Thombare SV, Hu S, McIntyre PC.

Nanotechnology. 2012 Sep 28;23(38):385603. doi: 10.1088/0957-4484/23/38/385603. Epub 2012 Sep 4.

PMID:
22947505
11.

Electrical properties and magnetic response of cobalt germanosilicide nanowires.

Tsai CI, Wang CY, Tang J, Hung MH, Wang KL, Chen LJ.

ACS Nano. 2011 Dec 27;5(12):9552-8. doi: 10.1021/nn202695a. Epub 2011 Nov 8.

PMID:
22067017
12.

Large thermoelectric figure-of-merits from SiGe nanowires by simultaneously measuring electrical and thermal transport properties.

Lee EK, Yin L, Lee Y, Lee JW, Lee SJ, Lee J, Cha SN, Whang D, Hwang GS, Hippalgaonkar K, Majumdar A, Yu C, Choi BL, Kim JM, Kim K.

Nano Lett. 2012 Jun 13;12(6):2918-23. doi: 10.1021/nl300587u. Epub 2012 May 14.

PMID:
22548377
13.

Electrical characteristics of Ge-based metal-insulator-semiconductor devices with Ge3N4 dielectrics formed by plasma nitridation.

Okamoto G, Kutsuki K, Hosoi T, Shimura T, Watanabe H.

J Nanosci Nanotechnol. 2011 Apr;11(4):2856-60.

PMID:
21776643
14.

Transport modulation in Ge/Si core/shell nanowires through controlled synthesis of doped Si shells.

Zhao Y, Smith JT, Appenzeller J, Yang C.

Nano Lett. 2011 Apr 13;11(4):1406-11. doi: 10.1021/nl1031138. Epub 2011 Mar 21.

PMID:
21417251
15.

Ultrasmooth silver thin films deposited with a germanium nucleation layer.

Logeeswaran Vj, Kobayashi NP, Islam MS, Wu W, Chaturvedi P, Fang NX, Wang SY, Williams RS.

Nano Lett. 2009 Jan;9(1):178-82. doi: 10.1021/nl8027476.

PMID:
19105737
16.

Thermoelectric transport in strained Si and Si/Ge heterostructures.

Hinsche NF, Mertig I, Zahn P.

J Phys Condens Matter. 2012 Jul 11;24(27):275501. doi: 10.1088/0953-8984/24/27/275501. Epub 2012 Jun 19.

PMID:
22713229
17.

Relative influence of surface states and bulk impurities on the electrical properties of Ge nanowires.

Zhang S, Hemesath ER, Perea DE, Wijaya E, Lensch-Falk JL, Lauhon LJ.

Nano Lett. 2009 Sep;9(9):3268-74. doi: 10.1021/nl901548u.

PMID:
19658399
18.

Direct evidence of stacking disorder in the mixed ionic-electronic conductor Sr4Fe6O12+δ.

Rossell MD, Abakumov AM, Ramasse QM, Erni R.

ACS Nano. 2013 Apr 23;7(4):3078-85. doi: 10.1021/nn3058449. Epub 2013 Mar 12.

PMID:
23458358
19.

Controlled synthesis of germanium nanowires and nanotubes with variable morphologies and sizes.

Li X, Meng G, Xu Q, Kong M, Zhu X, Chu Z, Li AP.

Nano Lett. 2011 Apr 13;11(4):1704-9. doi: 10.1021/nl200229p. Epub 2011 Mar 18.

PMID:
21417314
20.

Nanochannel-directed growth of multi-segment nanowire heterojunctions of metallic Au(1-x)Ge(x) and semiconducting Ge.

Li X, Meng G, Qin S, Xu Q, Chu Z, Zhu X, Kong M, Li AP.

ACS Nano. 2012 Jan 24;6(1):831-6. doi: 10.1021/nn2043466. Epub 2011 Dec 29.

PMID:
22195681

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