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Items: 1 to 20 of 125

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Two-dimensional self-organization of an ordered Au silicide nanowire network on a Si(110)-16 x 2 surface.

Hong IeH, Yen SC, Lin FS.

Small. 2009 Aug 17;5(16):1855-61. doi: 10.1002/smll.200900286.

PMID:
19544319
6.

Small-diameter silicon nanowire surfaces.

Ma DD, Lee CS, Au FC, Tong SY, Lee ST.

Science. 2003 Mar 21;299(5614):1874-7.

7.

Structure, morphology, and photoluminescence of porous Si nanowires: effect of different chemical treatments.

Leontis I, Othonos A, Nassiopoulou AG.

Nanoscale Res Lett. 2013 Sep 11;8(1):383. doi: 10.1186/1556-276X-8-383.

8.

Atomically smooth p-doped silicon nanowires catalyzed by aluminum at low temperature.

Moutanabbir O, Senz S, Scholz R, Alexe M, Kim Y, Pippel E, Wang Y, Wiethoff C, Nabbefeld T, Meyer zu Heringdorf F, Horn-von Hoegen M.

ACS Nano. 2011 Feb 22;5(2):1313-20. doi: 10.1021/nn1030274.

PMID:
21210666
10.

Orthogonal self-assembly of interconnected one-dimensional inorganic and organic nanostructures on the Si(100) surface.

Wang QH, Hersam MC.

J Am Chem Soc. 2008 Oct 1;130(39):12896-7. doi: 10.1021/ja806123j.

PMID:
18778058
11.

Extended arrays of vertically aligned sub-10 nm diameter [100] Si nanowires by metal-assisted chemical etching.

Huang Z, Zhang X, Reiche M, Liu L, Lee W, Shimizu T, Senz S, Gösele U.

Nano Lett. 2008 Sep;8(9):3046-51. doi: 10.1021/nl802324y.

PMID:
18698834
12.
13.

Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices.

Lin YC, Lu KC, Wu WW, Bai J, Chen LJ, Tu KN, Huang Y.

Nano Lett. 2008 Mar;8(3):913-8. doi: 10.1021/nl073279r.

PMID:
18266331
14.

Nitrogen-doped tungsten oxide nanowires: low-temperature synthesis on Si, and electrical, optical, and field-emission properties.

Chang MT, Chou LJ, Chueh YL, Lee YC, Hsieh CH, Chen CD, Lan YW, Chen LJ.

Small. 2007 Apr;3(4):658-64.

PMID:
17315263
15.

In-plane epitaxial growth of silicon nanowires and junction formation on Si(100) substrates.

Yu L, Xu M, Xu J, Xue Z, Fan Z, Picardi G, Fortuna F, Wang J, Xu J, Shi Y, Chen K, Roca i Cabarrocas P.

Nano Lett. 2014 Nov 12;14(11):6469-74. doi: 10.1021/nl503001g.

PMID:
25343717
16.

Low-temperature growth of silicon nanotubes and nanowires on amorphous substrates.

Mbenkum BN, Schneider AS, Schütz G, Xu C, Richter G, van Aken PA, Majer G, Spatz JP.

ACS Nano. 2010 Apr 27;4(4):1805-12. doi: 10.1021/nn900969y.

PMID:
20218667
17.

Detection of spin polarized carrier in silicon nanowire with single crystal MnSi as magnetic contacts.

Lin YC, Chen Y, Shailos A, Huang Y.

Nano Lett. 2010 Jun 9;10(6):2281-7. doi: 10.1021/nl101477q.

PMID:
20499889
18.

Exceptional electrochemical performance of Si-nanowires in 1,3-dioxolane solutions: a surface chemical investigation.

Etacheri V, Geiger U, Gofer Y, Roberts GA, Stefan IC, Fasching R, Aurbach D.

Langmuir. 2012 Apr 10;28(14):6175-84. doi: 10.1021/la300306v.

PMID:
22428945
19.

Electrical characteristics and photocurrent spectral response of Si nanowires p-i-n junctions.

Sun Y, Rusli, Yu M, Salfi J, Souza C, Ruda HE, Singh N, Lin FK, Lo P, Kwong DL.

Opt Express. 2011 Mar 14;19(6):5464-9.

PMID:
21560445
20.

Growth time-dependent density and surface evolution of silicon nanowires in a vapor-liquid-solid process.

Lee CY, Kim GS, Lee SY, Kim TH, Seo DW, Lee SK.

J Nanosci Nanotechnol. 2011 Aug;11(8):6946-52.

PMID:
22103103
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