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Items: 1 to 20 of 101

1.

Threshold voltage fluctuation in 16-nm-gate FinFets induced by random work function of nanosized metal grain.

Li Y, Cheng HW, Hwang CH.

J Nanosci Nanotechnol. 2012 Jun;12(6):4485-8.

PMID:
22905489
2.

Gate coupling and charge distribution in nanowire field effect transistors.

Khanal DR, Wu J.

Nano Lett. 2007 Sep;7(9):2778-83. Epub 2007 Aug 25.

PMID:
17718588
3.

Electric field dependent photocurrent decay length in single lead sulfide nanowire field effect transistors.

Graham R, Miller C, Oh E, Yu D.

Nano Lett. 2011 Feb 9;11(2):717-22. doi: 10.1021/nl1038456. Epub 2010 Dec 23.

PMID:
21182310
4.

Post annealing effects on the electrical characteristics of pentacene thin film transistors on flexible substrates.

Oh TY, Jeong SW, Chang S, Park JH, Kim JW, Choi K, Ha HJ, Hwang BY, Ju BK.

J Nanosci Nanotechnol. 2013 May;13(5):3491-4.

PMID:
23858886
5.

Coplanar-gate transparent graphene transistors and inverters on plastic.

Kim BJ, Lee SK, Kang MS, Ahn JH, Cho JH.

ACS Nano. 2012 Oct 23;6(10):8646-51. doi: 10.1021/nn3020486. Epub 2012 Sep 6.

PMID:
22954200
6.

Operation of graphene transistors at gigahertz frequencies.

Lin YM, Jenkins KA, Valdes-Garcia A, Small JP, Farmer DB, Avouris P.

Nano Lett. 2009 Jan;9(1):422-6. doi: 10.1021/nl803316h.

PMID:
19099364
7.

Atomistic boron-doped graphene field-effect transistors: a route toward unipolar characteristics.

Marconcini P, Cresti A, Triozon F, Fiori G, Biel B, Niquet YM, Macucci M, Roche S.

ACS Nano. 2012 Sep 25;6(9):7942-7. Epub 2012 Aug 21.

PMID:
22876866
8.
9.

Quantum behavior of graphene transistors near the scaling limit.

Wu Y, Perebeinos V, Lin YM, Low T, Xia F, Avouris P.

Nano Lett. 2012 Mar 14;12(3):1417-23. doi: 10.1021/nl204088b. Epub 2012 Feb 15.

PMID:
22316333
10.

Negative differential resistance in carbon nanotube field-effect transistors with patterned gate oxide.

Rinkiö M, Johansson A, Kotimäki V, Törmä P.

ACS Nano. 2010 Jun 22;4(6):3356-62. doi: 10.1021/nn100208v.

PMID:
20524681
11.

Hybrid permeable-base transistors based on an indenofluorene derivative.

Serbena JP, Hümmelgen IA, Hadizad T, Wang ZY.

Small. 2006 Mar;2(3):372-4. No abstract available.

PMID:
17193053
12.

Random-telegraph-signal noise and device variability in ballistic nanotube transistors.

Wang NP, Heinze S, Tersoff J.

Nano Lett. 2007 Apr;7(4):910-3. Epub 2007 Mar 9.

PMID:
17346090
13.

Electrical transport model of Silicene as a channel of field effect transistor.

Sadeghi H.

J Nanosci Nanotechnol. 2014 Jun;14(6):4178-84.

PMID:
24738367
14.

Current saturation and voltage gain in bilayer graphene field effect transistors.

Szafranek BN, Fiori G, Schall D, Neumaier D, Kurz H.

Nano Lett. 2012 Mar 14;12(3):1324-8. doi: 10.1021/nl2038634. Epub 2012 Feb 22.

PMID:
22339809
15.

Graphene-graphite oxide field-effect transistors.

Standley B, Mendez A, Schmidgall E, Bockrath M.

Nano Lett. 2012 Mar 14;12(3):1165-9. doi: 10.1021/nl2028415. Epub 2012 Mar 1.

PMID:
22380722
16.

High-performance flexible transparent thin-film transistors using a hybrid gate dielectric and an amorphous zinc indium tin oxide channel.

Liu J, Buchholz DB, Chang RP, Facchetti A, Marks TJ.

Adv Mater. 2010 Jun 4;22(21):2333-7. doi: 10.1002/adma.200903761. No abstract available.

PMID:
20491089
17.

Dielectric investigations and theoretical calculations of size effect in lead titanate nanocrystals.

Grigalaitis R, Banys J, Lapinskas S, Erdem E, Böttcher R, Gläsel HJ, Hartmann E.

IEEE Trans Ultrason Ferroelectr Freq Control. 2006 Dec;53(12):2270-4.

PMID:
17186906
18.
19.

Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants.

Huang WT, Li Y.

Nanoscale Res Lett. 2015 Mar 11;10:116. doi: 10.1186/s11671-015-0739-0. eCollection 2015.

20.

A novel method for fabricating sub-16 nm footprint T-gate nanoimprint molds.

Peng C, Liang X, Chou SY.

Nanotechnology. 2009 May 6;20(18):185302. doi: 10.1088/0957-4484/20/18/185302. Epub 2009 Apr 14.

PMID:
19420609

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