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Items: 1 to 20 of 167

1.

Flexible non-volatile ferroelectric polymer memory with gate-controlled multilevel operation.

Hwang SK, Bae I, Kim RH, Park C.

Adv Mater. 2012 Nov 20;24(44):5910-4. doi: 10.1002/adma.201201831. Epub 2012 Aug 9.

PMID:
22887686
2.

Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor.

Sohn JI, Choi SS, Morris SM, Bendall JS, Coles HJ, Hong WK, Jo G, Lee T, Welland ME.

Nano Lett. 2010 Nov 10;10(11):4316-20. doi: 10.1021/nl1013713.

PMID:
20945844
3.

Directed crystallization of poly(3-hexylthiophene) in micrometre channels under confinement and in electric fields.

Fischer FS, Tremel K, Sommer M, Crossland EJ, Ludwigs S.

Nanoscale. 2012 Mar 21;4(6):2138-44. doi: 10.1039/c2nr12037b. Epub 2012 Feb 17.

PMID:
22344410
4.

Poly(3-hexylthiophene) nanostructured materials for organic electronics applications.

Bhatt MP, Magurudeniya HD, Rainbolt EA, Huang P, Dissanayake DS, Biewer MC, Stefan MC.

J Nanosci Nanotechnol. 2014 Feb;14(2):1033-50.

PMID:
24749411
5.

Disordered self assembled monolayer dielectric induced hysteresis in organic field effect transistors.

Padma N, Saxena V, Sudarsan V, Rava H, Sen S.

J Nanosci Nanotechnol. 2014 Jun;14(6):4418-23.

PMID:
24738406
6.

Fabrication of arrayed Si nanowire-based nano-floating gate memory devices on flexible plastics.

Yoon C, Jeon Y, Yun J, Kim S.

J Nanosci Nanotechnol. 2012 Jan;12(1):578-84.

PMID:
22524023
7.

Nonvolatile memory cells based on MoS2/graphene heterostructures.

Bertolazzi S, Krasnozhon D, Kis A.

ACS Nano. 2013 Apr 23;7(4):3246-52. doi: 10.1021/nn3059136. Epub 2013 Mar 19.

8.

Switches from pi- to sigma-bonding complexes controlled by gate voltages.

Matsui E, Harnack O, Matsuzawa NN, Yasuda A.

J Nanosci Nanotechnol. 2005 Oct;5(10):1755-8.

PMID:
16245543
9.

Extremely scaled 3-dimensional multiple-gate technologies for terabit era.

Choi YK, Kim KH, Han JW, Ryu SW, Lee H.

J Nanosci Nanotechnol. 2007 Nov;7(11):4126-30.

PMID:
18047133
10.

Coplanar-gate transparent graphene transistors and inverters on plastic.

Kim BJ, Lee SK, Kang MS, Ahn JH, Cho JH.

ACS Nano. 2012 Oct 23;6(10):8646-51. doi: 10.1021/nn3020486. Epub 2012 Sep 6.

PMID:
22954200
11.

Modeling of the electrostatic coupling between nanocrystals of a disordered nanocrystal floating gate memory.

Armeanu D, Leroy Y, Cordan AS.

Nanotechnology. 2012 Jun 1;23(21):215203. doi: 10.1088/0957-4484/23/21/215203.

PMID:
22552024
12.

Key integration technologies for nanoscale FRAMs.

Jung DJ, Kim HH, Kim K.

IEEE Trans Ultrason Ferroelectr Freq Control. 2007 Dec;54(12):2535-40. doi: 10.1109/TUFFC.2007.573.

PMID:
18276551
13.

Concept of a thin film memory transistor based on ZnO nanoparticles insulated by a ligand shell.

Hirschmann J, Faber H, Halik M.

Nanoscale. 2012 Jan 21;4(2):444-7. doi: 10.1039/c2nr11589a. Epub 2011 Dec 12.

PMID:
22159764
14.

Memristor-MOS analog correlator for pattern recognition system.

Han CR, Lee SJ, Oh KS, Cho K.

J Nanosci Nanotechnol. 2013 May;13(5):3365-70.

PMID:
23858860
15.

Chemically cross-linked thin poly(vinylidene fluoride-co-trifluoroethylene)films for nonvolatile ferroelectric polymer memory.

Shin YJ, Kang SJ, Jung HJ, Park YJ, Bae I, Choi DH, Park C.

ACS Appl Mater Interfaces. 2011 Feb;3(2):582-9. doi: 10.1021/am1011657. Epub 2011 Feb 8.

PMID:
21302914
16.

Gate dependent photo-responses of carbon nanotube field effect phototransistors.

Chen HZ, Xi N, Lai KW, Chen LL, Yang RG, Song B.

Nanotechnology. 2012 Sep 28;23(38):385203. doi: 10.1088/0957-4484/23/38/385203. Epub 2012 Sep 4.

PMID:
22948041
17.

Nonvolatile polymer memory with nanoconfinement of ferroelectric crystals.

Kang SJ, Bae I, Shin YJ, Park YJ, Huh J, Park SM, Kim HC, Park C.

Nano Lett. 2011 Jan 12;11(1):138-44. doi: 10.1021/nl103094e. Epub 2010 Nov 29.

PMID:
21114332
18.

Single-ion dosemeter based on floating gate memories.

Cellere G, Paccagnella A, Visconti A, Bonanomi M, McNulty PJ.

Radiat Prot Dosimetry. 2006;122(1-4):457-9. Epub 2006 Nov 28.

PMID:
17132673
19.

Memory applications and electrical bistability of semiconducting nanoparticles: do the phenomena depend on bandgap?

Das BC, Pal AJ.

Small. 2008 May;4(5):542-7. doi: 10.1002/smll.200700985. No abstract available.

PMID:
18421723
20.

Random-telegraph-signal noise and device variability in ballistic nanotube transistors.

Wang NP, Heinze S, Tersoff J.

Nano Lett. 2007 Apr;7(4):910-3. Epub 2007 Mar 9.

PMID:
17346090

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