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Items: 1 to 20 of 161

1.

Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity.

Yuryev VA, Arapkina LV, Storozhevykh MS, Chapnin VA, Chizh KV, Uvarov OV, Kalinushkin VP, Zhukova ES, Prokhorov AS, Spektor IE, Gorshunov BP.

Nanoscale Res Lett. 2012 Jul 23;7(1):414. doi: 10.1186/1556-276X-7-414.

2.
3.

Initial stage growth of GexSi1-x layers and Ge quantum dot formation on GexSi1-x surface by MBE.

Nikiforov AI, Timofeev VA, Teys SA, Gutakovsky AK, Pchelyakov OP.

Nanoscale Res Lett. 2012 Oct 9;7(1):561. doi: 10.1186/1556-276X-7-561.

4.

Design of multifold Ge/Si/Ge composite quantum-dot heterostructures for visible to near-infrared photodetection.

Kuo MH, Lai WT, Lee SW, Chen YC, Chang CW, Chang WH, Hsu TM, Li PW.

Opt Lett. 2015 May 15;40(10):2401-4. doi: 10.1364/OL.40.002401.

PMID:
26393750
5.

Production of three-dimensional quantum dot lattice of Ge/Si core-shell quantum dots and Si/Ge layers in an alumina glass matrix.

Buljan M, Radić N, Sancho-Paramon J, Janicki V, Grenzer J, Bogdanović-Radović I, Siketić Z, Ivanda M, Utrobičić A, Hübner R, Weidauer R, Valeš V, Endres J, Car T, Jerčinović M, Roško J, Bernstorff S, Holy V.

Nanotechnology. 2015 Feb 13;26(6):065602. doi: 10.1088/0957-4484/26/6/065602. Epub 2015 Jan 21.

PMID:
25605224
6.
7.

Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots.

Izhnin II, Fitsych OI, Pishchagin AA, Kokhanenko AP, Voitsekhovskii AV, Dzyadukh SM, Nikiforov AI.

Nanoscale Res Lett. 2017 Dec;12(1):131. doi: 10.1186/s11671-017-1916-0. Epub 2017 Feb 20.

8.

Enhanced 400-600 nm photoresponsivity of metal-oxide-semiconductor diodes with multi-stack germanium quantum dots.

Tzeng SS, Li PW.

Nanotechnology. 2008 Jun 11;19(23):235203. doi: 10.1088/0957-4484/19/23/235203. Epub 2008 May 6.

PMID:
21825783
9.

Ge quantum dots structural peculiarities depending on the preparation conditions.

Erenburg S, Bausk N, Mazalov L, Nikiforov A, Yakimov A.

J Synchrotron Radiat. 2003 Sep 1;10(Pt 5):380-3. Epub 2003 Aug 28.

PMID:
12944626
10.

Designer Ge/Si composite quantum dots with enhanced thermoelectric properties.

Chang HT, Wang SY, Lee SW.

Nanoscale. 2014 Apr 7;6(7):3593-8. doi: 10.1039/c3nr06335f.

PMID:
24548996
11.

Heterostructure terahertz devices.

Ryzhii V.

J Phys Condens Matter. 2008 Aug 19;20(38):380301. doi: 10.1088/0953-8984/20/38/380301. Epub 2008 Jul 7.

PMID:
21693805
12.

Ge quantum dot memory structure with laterally ordered highly dense arrays of Ge dots.

Nassiopoulou AG, Olzierski A, Tsoi E, Berbezier I, Karmous A.

J Nanosci Nanotechnol. 2007 Jan;7(1):316-21.

PMID:
17455497
13.

Magnetotransport Properties of Epitaxial Ge/AlAs Heterostructures Integrated on GaAs and Silicon.

Hudait MK, Clavel M, Goley PS, Xie Y, Heremans JJ.

ACS Appl Mater Interfaces. 2015 Oct 14;7(40):22315-21. doi: 10.1021/acsami.5b05814. Epub 2015 Oct 5.

PMID:
26413844
14.

Thermal conductivity of Si-Ge quantum dot superlattices.

Haskins JB, Kınacı A, Cağın T.

Nanotechnology. 2011 Apr 15;22(15):155701. doi: 10.1088/0957-4484/22/15/155701. Epub 2011 Mar 10.

PMID:
21389580
15.

Misfit-guided self-organization of anticorrelated Ge quantum dot arrays on Si nanowires.

Kwon S, Chen ZC, Kim JH, Xiang J.

Nano Lett. 2012 Sep 12;12(9):4757-62. doi: 10.1021/nl302190e. Epub 2012 Aug 16.

16.

Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature.

Liu Z, Cheng B, Hu W, Su S, Li C, Wang Q.

Nanoscale Res Lett. 2012 Jul 11;7(1):383. doi: 10.1186/1556-276X-7-383.

17.

Amorphous Ge quantum dots embedded in crystalline Si: ab initio results.

Laubscher M, Küfner S, Kroll P, Bechstedt F.

J Phys Condens Matter. 2015 Oct 14;27(40):405302. doi: 10.1088/0953-8984/27/40/405302. Epub 2015 Sep 24.

PMID:
26402441
18.

Impact of annealing on surface morphology and photoluminescence of self-assembled Ge and Si quantum dots.

Samavati A, Othaman Z, Dabagh S, Ghoshal SK.

J Nanosci Nanotechnol. 2014 Jul;14(7):5266-71.

PMID:
24758014
19.

Spin states of holes in Ge/Si nanowire quantum dots.

Roddaro S, Fuhrer A, Brusheim P, Fasth C, Xu HQ, Samuelson L, Xiang J, Lieber CM.

Phys Rev Lett. 2008 Oct 31;101(18):186802. Epub 2008 Oct 27.

PMID:
18999847
20.

MBE-grown Si and Si(1-x)Ge(x) quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device.

Manna S, Aluguri R, Katiyar A, Das S, Laha A, Osten HJ, Ray SK.

Nanotechnology. 2013 Dec 20;24(50):505709. doi: 10.1088/0957-4484/24/50/505709. Epub 2013 Nov 27.

PMID:
24284782

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