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Items: 1 to 20 of 181

1.

Cascading wafer-scale integrated graphene complementary inverters under ambient conditions.

Rizzi LG, Bianchi M, Behnam A, Carrion E, Guerriero E, Polloni L, Pop E, Sordan R.

Nano Lett. 2012 Aug 8;12(8):3948-53. doi: 10.1021/nl301079r. Epub 2012 Jul 13.

PMID:
22793169
2.

Low operating bias and matched input-output characteristics in graphene logic inverters.

Li SL, Miyazaki H, Kumatani A, Kanda A, Tsukagoshi K.

Nano Lett. 2010 Jul 14;10(7):2357-62. doi: 10.1021/nl100031x.

PMID:
20518487
3.

Self-aligned fabrication of graphene RF transistors with T-shaped gate.

Badmaev A, Che Y, Li Z, Wang C, Zhou C.

ACS Nano. 2012 Apr 24;6(4):3371-6. doi: 10.1021/nn300393c. Epub 2012 Mar 20.

PMID:
22404336
4.

Gigahertz integrated graphene ring oscillators.

Guerriero E, Polloni L, Bianchi M, Behnam A, Carrion E, Rizzi LG, Pop E, Sordan R.

ACS Nano. 2013 Jun 25;7(6):5588-94. doi: 10.1021/nn401933v. Epub 2013 Jun 3.

PMID:
23713626
5.

Graphene and thin-film semiconductor heterojunction transistors integrated on wafer scale for low-power electronics.

Heo J, Byun KE, Lee J, Chung HJ, Jeon S, Park S, Hwang S.

Nano Lett. 2013;13(12):5967-71. doi: 10.1021/nl403142v. Epub 2013 Nov 25.

PMID:
24256403
6.

Ultrahigh-performance inverters based on CdS nanobelts.

Wu P, Ye Y, Sun T, Peng R, Wen X, Xu W, Liu C, Dai L.

ACS Nano. 2009 Oct 27;3(10):3138-42. doi: 10.1021/nn9008438.

PMID:
19757800
7.

Large-Area CVD-Grown Sub-2 V ReS2 Transistors and Logic Gates.

Dathbun A, Kim Y, Kim S, Yoo Y, Kang MS, Lee C, Cho JH.

Nano Lett. 2017 May 10;17(5):2999-3005. doi: 10.1021/acs.nanolett.7b00315. Epub 2017 Apr 24.

PMID:
28414455
8.

All-Graphene Three-Terminal-Junction Field-Effect Devices as Rectifiers and Inverters.

Kim W, Li C, Chekurov N, Arpiainen S, Akinwande D, Lipsanen H, Riikonen J.

ACS Nano. 2015 Jun 23;9(6):5666-74. doi: 10.1021/nn507199n. Epub 2015 May 15.

PMID:
25961680
9.

High-performance organic complementary inverters using monolayer graphene electrodes.

Jeong YJ, Jang J, Nam S, Kim K, Kim LH, Park S, An TK, Park CE.

ACS Appl Mater Interfaces. 2014 May 14;6(9):6816-24. doi: 10.1021/am500618g. Epub 2014 Apr 22.

PMID:
24731001
10.

High-frequency graphene voltage amplifier.

Han SJ, Jenkins KA, Valdes Garcia A, Franklin AD, Bol AA, Haensch W.

Nano Lett. 2011 Sep 14;11(9):3690-3. doi: 10.1021/nl2016637. Epub 2011 Aug 5.

PMID:
21805988
11.

Toward 300 mm wafer-scalable high-performance polycrystalline chemical vapor deposited graphene transistors.

Rahimi S, Tao L, Chowdhury SF, Park S, Jouvray A, Buttress S, Rupesinghe N, Teo K, Akinwande D.

ACS Nano. 2014 Oct 28;8(10):10471-9. doi: 10.1021/nn5038493. Epub 2014 Sep 15.

PMID:
25198884
12.

Ultralow-power organic complementary circuits.

Klauk H, Zschieschang U, Pflaum J, Halik M.

Nature. 2007 Feb 15;445(7129):745-8.

PMID:
17301788
13.

Enhanced logic performance with semiconducting bilayer graphene channels.

Li SL, Miyazaki H, Hiura H, Liu C, Tsukagoshi K.

ACS Nano. 2011 Jan 25;5(1):500-6. doi: 10.1021/nn102346b. Epub 2010 Dec 16.

PMID:
21158484
14.

Top-down fabrication of fully CMOS-compatible silicon nanowire arrays and their integration into CMOS Inverters on plastic.

Lee M, Jeon Y, Moon T, Kim S.

ACS Nano. 2011 Apr 26;5(4):2629-36. doi: 10.1021/nn102594d. Epub 2011 Mar 15.

PMID:
21355599
15.

Top-gated chemical vapor deposition grown graphene transistors with current saturation.

Bai J, Liao L, Zhou H, Cheng R, Liu L, Huang Y, Duan X.

Nano Lett. 2011 Jun 8;11(6):2555-9. doi: 10.1021/nl201331x. Epub 2011 May 6.

16.

Complementary p- and n-type polymer doping for ambient stable graphene inverter.

Yun JM, Park S, Hwang YH, Lee ES, Maiti U, Moon H, Kim BH, Bae BS, Kim YH, Kim SO.

ACS Nano. 2014 Jan 28;8(1):650-6. doi: 10.1021/nn4053099. Epub 2013 Dec 23.

PMID:
24350996
17.

Photo-patternable ion gel-gated graphene transistors and inverters on plastic.

Lee SK, Kabir SM, Sharma BK, Kim BJ, Cho JH, Ahn JH.

Nanotechnology. 2014 Jan 10;25(1):014002. doi: 10.1088/0957-4484/25/1/014002. Epub 2013 Dec 11.

PMID:
24334373
18.

Negative differential resistance in graphene-based ballistic field-effect transistor with oblique top gate.

Dragoman M, Dinescu A, Dragoman D.

Nanotechnology. 2014 Oct 17;25(41):415201. doi: 10.1088/0957-4484/25/41/415201. Epub 2014 Sep 24.

PMID:
25248438
19.

Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide.

Das T, Chen X, Jang H, Oh IK, Kim H, Ahn JH.

Small. 2016 Nov;12(41):5720-5727. doi: 10.1002/smll.201602101. Epub 2016 Sep 8.

PMID:
27608439
20.

Complementary symmetry nanowire logic circuits: experimental demonstrations and in silico optimizations.

Sheriff BA, Wang D, Heath JR, Kurtin JN.

ACS Nano. 2008 Sep 23;2(9):1789-98. doi: 10.1021/nn800025q.

PMID:
19206417

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