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Items: 1 to 20 of 214

1.

Ultrashort channel silicon nanowire transistors with nickel silicide source/drain contacts.

Tang W, Dayeh SA, Picraux ST, Huang JY, Tu KN.

Nano Lett. 2012 Aug 8;12(8):3979-85. doi: 10.1021/nl3011676. Epub 2012 Jul 13.

PMID:
22731955
2.

Silicon-nanowire transistors with intruded nickel-silicide contacts.

Weber WM, Geelhaar L, Graham AP, Unger E, Duesberg GS, Liebau M, Pamler W, Ch├Ęze C, Riechert H, Lugli P, Kreupl F.

Nano Lett. 2006 Dec;6(12):2660-6.

PMID:
17163684
3.

Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed.

Hu Y, Xiang J, Liang G, Yan H, Lieber CM.

Nano Lett. 2008 Mar;8(3):925-30. doi: 10.1021/nl073407b. Epub 2008 Feb 6.

PMID:
18251518
4.

Oxide-confined formation of germanium nanowire heterostructures for high-performance transistors.

Tang J, Wang CY, Xiu F, Lang M, Chu LW, Tsai CJ, Chueh YL, Chen LJ, Wang KL.

ACS Nano. 2011 Jul 26;5(7):6008-15. doi: 10.1021/nn2017777. Epub 2011 Jul 1.

PMID:
21699197
5.

Metal/nanowire contacts, quantum confinement, and their roles in the generation of new, gigantic actions in nanowire transistors.

Mohammad SN.

Nanotechnology. 2013 Nov 15;24(45):455201. doi: 10.1088/0957-4484/24/45/455201. Epub 2013 Oct 15.

PMID:
24129340
6.

Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient.

Barreda JL, Keiper TD, Zhang M, Xiong P.

ACS Appl Mater Interfaces. 2017 Apr 5;9(13):12046-12053. doi: 10.1021/acsami.7b00144. Epub 2017 Mar 23.

PMID:
28274114
7.

Single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure transistors.

Tang J, Wang CY, Xiu F, Hong AJ, Chen S, Wang M, Zeng C, Yang HJ, Tuan HY, Tsai CJ, Chen LJ, Wang KL.

Nanotechnology. 2010 Dec 17;21(50):505704. doi: 10.1088/0957-4484/21/50/505704. Epub 2010 Nov 22.

PMID:
21098938
8.

Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices.

Lin YC, Lu KC, Wu WW, Bai J, Chen LJ, Tu KN, Huang Y.

Nano Lett. 2008 Mar;8(3):913-8. doi: 10.1021/nl073279r. Epub 2008 Feb 12.

PMID:
18266331
9.

Atomic scale alignment of copper-germanide contacts for ge nanowire metal oxide field effect transistors.

Burchhart T, Lugstein A, Hyun YJ, Hochleitner G, Bertagnolli E.

Nano Lett. 2009 Nov;9(11):3739-42. doi: 10.1021/nl9019243.

PMID:
19691284
10.

Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowires.

Ogata K, Sutter E, Zhu X, Hofmann S.

Nanotechnology. 2011 Sep 7;22(36):365305. doi: 10.1088/0957-4484/22/36/365305. Epub 2011 Aug 12. Erratum in: Nanotechnology. 2011 Nov 18;22(46):469601.

PMID:
21841219
11.

Channel length scaling of MoS2 MOSFETs.

Liu H, Neal AT, Ye PD.

ACS Nano. 2012 Oct 23;6(10):8563-9. doi: 10.1021/nn303513c. Epub 2012 Sep 12.

PMID:
22957650
12.

Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures.

Wu Y, Xiang J, Yang C, Lu W, Lieber CM.

Nature. 2004 Jul 1;430(6995):61-5. Erratum in: Nature. 2004 Aug 5;430(7000):704.

PMID:
15229596
13.

Ge/Si nanowire heterostructures as high-performance field-effect transistors.

Xiang J, Lu W, Hu Y, Wu Y, Yan H, Lieber CM.

Nature. 2006 May 25;441(7092):489-93.

PMID:
16724062
14.

Understanding the impact of Schottky barriers on the performance of narrow bandgap nanowire field effect transistors.

Zhao Y, Candebat D, Delker C, Zi Y, Janes D, Appenzeller J, Yang C.

Nano Lett. 2012 Oct 10;12(10):5331-6. doi: 10.1021/nl302684s. Epub 2012 Sep 11.

PMID:
22950905
15.

Synthetically encoded ultrashort-channel nanowire transistors for fast, pointlike cellular signal detection.

Cohen-Karni T, Casanova D, Cahoon JF, Qing Q, Bell DC, Lieber CM.

Nano Lett. 2012 May 9;12(5):2639-44. doi: 10.1021/nl3011337. Epub 2012 Apr 6.

16.

Observation of diameter dependent carrier distribution in nanowire-based transistors.

Schulze A, Hantschel T, Eyben P, Verhulst AS, Rooyackers R, Vandooren A, Mody J, Nazir A, Leonelli D, Vandervorst W.

Nanotechnology. 2011 May 6;22(18):185701. doi: 10.1088/0957-4484/22/18/185701. Epub 2011 Mar 17.

PMID:
21415466
17.

The effect of channel width on the performance of AlGaN/GaN nanowire field effect transistors.

Kang MS, Lee JH, Lee HS, Koo SM.

J Nanosci Nanotechnol. 2013 Oct;13(10):7042-5.

PMID:
24245185
18.

Ultrashort Channel Length Black Phosphorus Field-Effect Transistors.

Miao J, Zhang S, Cai L, Scherr M, Wang C.

ACS Nano. 2015 Sep 22;9(9):9236-43. doi: 10.1021/acsnano.5b04036. Epub 2015 Aug 21.

PMID:
26277886
19.

An ordered Si nanowire with NiSi2 tip arrays as excellent field emitters.

Liu CY, Li WS, Chu LW, Lu MY, Tsai CJ, Chen LJ.

Nanotechnology. 2011 Feb 4;22(5):055603. doi: 10.1088/0957-4484/22/5/055603. Epub 2010 Dec 23.

PMID:
21178255
20.

In situ control of atomic-scale Si layer with huge strain in the nanoheterostructure NiSi/Si/NiSi through point contact reaction.

Lu KC, Wu WW, Wu HW, Tanner CM, Chang JP, Chen LJ, Tu KN.

Nano Lett. 2007 Aug;7(8):2389-94. Epub 2007 Jun 30.

PMID:
17604405

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