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Items: 1 to 20 of 112

1.

Evaluation of metal-nanowire electrical contacts by measuring contact end resistance.

Park H, Beresford R, Ha R, Choi HJ, Shin H, Xu J.

Nanotechnology. 2012 Jun 22;23(24):245201. doi: 10.1088/0957-4484/23/24/245201. Epub 2012 May 28.

PMID:
22641224
2.

Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt.

He JH, Chang PH, Chen CY, Tsai KT.

Nanotechnology. 2009 Apr 1;20(13):135701. doi: 10.1088/0957-4484/20/13/135701. Epub 2009 Mar 11.

PMID:
19420510
3.

Fabricating nanowire devices on diverse substrates by simple transfer-printing methods.

Lee CH, Kim DR, Zheng X.

Proc Natl Acad Sci U S A. 2010 Jun 1;107(22):9950-5. doi: 10.1073/pnas.0914031107. Epub 2010 May 17.

4.

Nanocontact resistance and structural disorder induced resistivity variation in metallic metal-oxide nanowires.

Lin YF, Wu ZY, Lin KC, Chen CC, Jian WB, Chen FR, Kai JJ.

Nanotechnology. 2009 Nov 11;20(45):455401. doi: 10.1088/0957-4484/20/45/455401. Epub 2009 Oct 13.

PMID:
19822926
5.

Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires.

Herrero AM, Blanchard PT, Sanders A, Brubaker MD, Sanford NA, Roshko A, Bertness KA.

Nanotechnology. 2012 Sep 14;23(36):365203. doi: 10.1088/0957-4484/23/36/365203. Epub 2012 Aug 21.

PMID:
22910019
6.

Thermo-compressive transfer printing for facile alignment and robust device integration of nanowires.

Lee WS, Won S, Park J, Lee J, Park I.

Nanoscale. 2012 Jun 7;4(11):3444-9. doi: 10.1039/c2nr30392b. Epub 2012 May 2.

PMID:
22549520
7.

Sensing properties of different classes of gases based on the nanowire-electrode junction barrier modulation.

Singh N, Yan C, Lee PS, Comini E.

Nanoscale. 2011 Apr;3(4):1760-5. doi: 10.1039/c0nr00871k. Epub 2011 Feb 23.

PMID:
21347489
8.

Contact-independent measurement of electrical conductance of a thin film with a nanoscale sensor.

Mentzel TS, Maclean K, Kastner MA.

Nano Lett. 2011 Oct 12;11(10):4102-6. doi: 10.1021/nl201650u. Epub 2011 Sep 15.

PMID:
21899339
9.

Schottky barrier and contact resistance of InSb nanowire field-effect transistors.

Fan D, Kang N, Ghalamestani SG, Dick KA, Xu HQ.

Nanotechnology. 2016 Jul 8;27(27):275204. doi: 10.1088/0957-4484/27/27/275204. Epub 2016 May 27.

PMID:
27232588
10.
11.

Analysis of contact interfaces for single GaN nanowire devices.

Herrero AM, Blanchard PT, Bertness KA.

J Vis Exp. 2013 Nov 15;(81):e50738. doi: 10.3791/50738.

12.

Scalable coating and properties of transparent, flexible, silver nanowire electrodes.

Hu L, Kim HS, Lee JY, Peumans P, Cui Y.

ACS Nano. 2010 May 25;4(5):2955-63. doi: 10.1021/nn1005232.

PMID:
20426409
13.

Room-temperature compressive transfer printing of nanowires for nanoelectronic devices.

Lee WS, Choi JH, Park I, Lee J.

Langmuir. 2012 Dec 21;28(51):17851-8. doi: 10.1021/la3036133. Epub 2012 Dec 11.

PMID:
23199260
14.

Friction and shear strength at the nanowire-substrate interfaces.

Zhu Y, Qin Q, Gu Y, Wang Z.

Nanoscale Res Lett. 2009 Nov 28;5(2):291-5. doi: 10.1007/s11671-009-9478-4.

15.

Ambipolar and unipolar PbSe nanowire field-effect transistors.

Kim DK, Vemulkar TR, Oh SJ, Koh WK, Murray CB, Kagan CR.

ACS Nano. 2011 Apr 26;5(4):3230-6. doi: 10.1021/nn200348p. Epub 2011 Mar 21.

PMID:
21405024
16.

Piezoelectric nanogenerators based on zinc oxide nanowire arrays.

Wang ZL, Song J.

Science. 2006 Apr 14;312(5771):242-6.

17.

Asymmetric contacts on a single SnO₂ nanowire device: an investigation using an equivalent circuit model.

Huh J, Na J, Ha JS, Kim S, Kim GT.

ACS Appl Mater Interfaces. 2011 Aug;3(8):3097-102. doi: 10.1021/am2006096. Epub 2011 Aug 1.

PMID:
21774484
18.

Atypical self-activation of Ga dopant for Ge nanowire devices.

Zeiner C, Lugstein A, Burchhart T, Pongratz P, Connell JG, Lauhon LJ, Bertagnolli E.

Nano Lett. 2011 Aug 10;11(8):3108-12. doi: 10.1021/nl201105k. Epub 2011 Jul 11.

PMID:
21744779
19.

Low-resistance ohmic contacts to SiC nanowires and their applications to field-effect transistors.

Jang CO, Kim TH, Lee SY, Kim DJ, Lee SK.

Nanotechnology. 2008 Aug 27;19(34):345203. doi: 10.1088/0957-4484/19/34/345203. Epub 2008 Jul 15.

PMID:
21730641
20.

Three-dimensional high-density hierarchical nanowire architecture for high-performance photoelectrochemical electrodes.

Shi J, Hara Y, Sun C, Anderson MA, Wang X.

Nano Lett. 2011 Aug 10;11(8):3413-9. doi: 10.1021/nl201823u. Epub 2011 Jul 22.

PMID:
21770438
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