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Items: 1 to 20 of 226

1.

Fabrication of flexible and vertical silicon nanowire electronics.

Weisse JM, Lee CH, Kim DR, Zheng X.

Nano Lett. 2012 Jun 13;12(6):3339-43. doi: 10.1021/nl301659m. Epub 2012 May 23.

PMID:
22594496
2.

Scalable fabrication of nanowire photonic and electronic circuits using spin-on glass.

Zimmler MA, Stichtenoth D, Ronning C, Yi W, Narayanamurti V, Voss T, Capasso F.

Nano Lett. 2008 Jun;8(6):1695-9. doi: 10.1021/nl080627w. Epub 2008 May 8.

PMID:
18462004
3.

Lateral self-aligned p-type In2O3 nanowire arrays epitaxially grown on Si substrates.

Hsin CL, He JH, Lee CY, Wu WW, Yeh PH, Chen LJ, Wang ZL.

Nano Lett. 2007 Jun;7(6):1799-803. Epub 2007 May 22.

PMID:
17516681
4.

Fabrication of suspended silicon nanowire arrays.

Lee KN, Jung SW, Shin KS, Kim WH, Lee MH, Seong WK.

Small. 2008 May;4(5):642-8. doi: 10.1002/smll.200700517.

PMID:
18431721
5.

Wafer-scale synthesis of single-crystal zigzag silicon nanowire arrays with controlled turning angles.

Chen H, Wang H, Zhang XH, Lee CS, Lee ST.

Nano Lett. 2010 Mar 10;10(3):864-8. doi: 10.1021/nl903391x.

PMID:
20104856
6.

Si/a-Si core/shell nanowires as nonvolatile crossbar switches.

Dong Y, Yu G, McAlpine MC, Lu W, Lieber CM.

Nano Lett. 2008 Feb;8(2):386-91. doi: 10.1021/nl073224p. Epub 2008 Jan 26.

PMID:
18220442
7.

Programmable direct-printing nanowire electronic components.

Lee TI, Choi WJ, Moon KJ, Choi JH, Kar JP, Das SN, Kim YS, Baik HK, Myoung JM.

Nano Lett. 2010 Mar 10;10(3):1016-21. doi: 10.1021/nl904190y.

PMID:
20108927
8.

Ordered arrays of <100>-oriented silicon nanorods by CMOS-compatible block copolymer lithography.

Zschech D, Kim DH, Milenin AP, Scholz R, Hillebrand R, Hawker CJ, Russell TP, Steinhart M, Gösele U.

Nano Lett. 2007 Jun;7(6):1516-20. Epub 2007 May 26.

PMID:
17530809
9.

Strain-driven electronic band structure modulation of si nanowires.

Hong KH, Kim J, Lee SH, Shin JK.

Nano Lett. 2008 May;8(5):1335-40. doi: 10.1021/nl0734140. Epub 2008 Apr 11.

PMID:
18402477
10.

Block copolymers: nanowire arrays build themselves.

Black CT.

Nat Nanotechnol. 2007 Aug;2(8):464-5. doi: 10.1038/nnano.2007.244. No abstract available.

PMID:
18654339
11.

Graphene synthesis on cubic SiC/Si wafers. perspectives for mass production of graphene-based electronic devices.

Aristov VY, Urbanik G, Kummer K, Vyalikh DV, Molodtsova OV, Preobrajenski AB, Zakharov AA, Hess C, Hänke T, Büchner B, Vobornik I, Fujii J, Panaccione G, Ossipyan YA, Knupfer M.

Nano Lett. 2010 Mar 10;10(3):992-5. doi: 10.1021/nl904115h.

PMID:
20141155
12.
13.

Suspended mechanical structures based on elastic silicon nanowire arrays.

Paulo AS, Arellano N, Plaza JA, He R, Carraro C, Maboudian R, Howe RT, Bokor J, Yang P.

Nano Lett. 2007 Apr;7(4):1100-4. Epub 2007 Mar 22.

PMID:
17375964
14.

Ordered arrays of silicon nanowires produced by nanosphere lithography and molecular beam epitaxy.

Fuhrmann B, Leipner HS, Höche HR, Schubert L, Werner P, Gösele U.

Nano Lett. 2005 Dec;5(12):2524-7.

PMID:
16351208
15.

Single crystalline Ge(1-x)Mn(x) nanowires as building blocks for nanoelectronics.

van der Meulen MI, Petkov N, Morris MA, Kazakova O, Han X, Wang KL, Jacob AP, Holmes JD.

Nano Lett. 2009 Jan;9(1):50-6. doi: 10.1021/nl802114x.

PMID:
19032036
16.

Significant reduction of thermal conductivity in Si/Ge core-shell nanowires.

Hu M, Giapis KP, Goicochea JV, Zhang X, Poulikakos D.

Nano Lett. 2011 Feb 9;11(2):618-23. doi: 10.1021/nl103718a. Epub 2010 Dec 9.

PMID:
21141989
17.

An advanced fabrication method of highly ordered ZnO nanowire arrays on silicon substrates by atomic layer deposition.

Subannajui K, Güder F, Danhof J, Menzel A, Yang Y, Kirste L, Wang C, Cimalla V, Schwarz U, Zacharias M.

Nanotechnology. 2012 Jun 15;23(23):235607. doi: 10.1088/0957-4484/23/23/235607.

PMID:
22609898
18.

Optical switching of porphyrin-coated silicon nanowire field effect transistors.

Winkelmann CB, Ionica I, Chevalier X, Royal G, Bucher C, Bouchiat V.

Nano Lett. 2007 Jun;7(6):1454-8. Epub 2007 May 11.

PMID:
17497816
19.

Self-assembly of copper micro/nanoscale parallel wires by electrodeposition on a silicon substrate.

Zhang M, Zuo G, Zong Z, Cheng H, He Z, Yang C, Zou G.

Small. 2006 Jun;2(6):727-31. No abstract available.

PMID:
17193112
20.

From crystalline germanium-silicon axial heterostructures to silicon nanowire-nanotubes.

Ben-Ishai M, Patolsky F.

Nano Lett. 2012 Mar 14;12(3):1121-8. doi: 10.1021/nl204263k. Epub 2012 Jan 31.

PMID:
22292971

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