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Items: 1 to 20 of 194

1.

Effects of a longitudinal magnetic field on spin injection and detection in InAs/GaAs quantum dot structures.

Beyer J, Wang PH, Buyanova IA, Suraprapapich S, Tu CW, Chen WM.

J Phys Condens Matter. 2012 Apr 11;24(14):145304. doi: 10.1088/0953-8984/24/14/145304. Epub 2012 Mar 15.

PMID:
22417853
2.

Spin injection in lateral InAs quantum dot structures by optical orientation spectroscopy.

Beyer J, Buyanova IA, Suraprapapich S, Tu CW, Chen WM.

Nanotechnology. 2009 Sep 16;20(37):375401. doi: 10.1088/0957-4484/20/37/375401. Epub 2009 Aug 26.

PMID:
19706957
3.

Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer.

Ahmad I, Avrutin V, Morkoç H, Moore JC, Baski AA.

J Nanosci Nanotechnol. 2007 Aug;7(8):2889-93.

PMID:
17685312
4.

High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability.

Cao Y, Ji H, Xu P, Gu Y, Ma W, Yang T.

Opt Lett. 2012 Oct 1;37(19):4071-3. doi: 10.1364/OL.37.004071.

PMID:
23027282
5.

Strong extinction of a far-field laser beam by a single quantum dot.

Vamivakas AN, Atatüre M, Dreiser J, Yilmaz ST, Badolato A, Swan AK, Goldberg BB, Imamoglu A, Unlü MS.

Nano Lett. 2007 Sep;7(9):2892-6. Epub 2007 Aug 11.

PMID:
17691853
6.

Comparative magneto-photoluminescence study of ensembles and of individual InAs quantum dots.

Moskalenko ES, Larsson LA, Larsson M, Holtz PO, Schoenfeld WV, Petroff PM.

Nano Lett. 2009 Jan;9(1):353-9. doi: 10.1021/nl803148q.

PMID:
19072126
7.

InAs quantum dots capped by GaAs, In0.4Ga0.6As dots, and In0.2Ga0.8As well.

Fu Y, Wang SM, Ferdos F, Sadeghi M, Larsson A.

J Nanosci Nanotechnol. 2002 Jun-Aug;2(3-4):421-6.

PMID:
12908273
8.

Low density InAs/(In)GaAs quantum dots emitting at long wavelengths.

Trevisi G, Seravalli L, Frigeri P, Franchi S.

Nanotechnology. 2009 Oct 14;20(41):415607. doi: 10.1088/0957-4484/20/41/415607. Epub 2009 Sep 18.

PMID:
19762951
9.

Enhanced spontaneous emission from InAs/GaAs quantum dots in pillar microcavities emitting at telecom wavelengths.

Chauvin N, Balet L, Alloing B, Zinoni C, Li L, Fiore A, Grenouillet L, Gilet P, Olivier N, Tchelnokov A, Terrier M, Gérard JM.

Opt Lett. 2007 Sep 15;32(18):2747-9.

PMID:
17873956
10.

The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures.

Seravalli L, Trevisi G, Frigeri P, Franchi S, Geddo M, Guizzetti G.

Nanotechnology. 2009 Jul 8;20(27):275703. doi: 10.1088/0957-4484/20/27/275703. Epub 2009 Jun 17.

PMID:
19531853
11.

The Hanle effect and electron spin polarization in InAs/GaAs quantum dots up to room temperature.

Beyer J, Buyanova IA, Suraprapapich S, Tu CW, Chen WM.

Nanotechnology. 2012 Apr 6;23(13):135705. doi: 10.1088/0957-4484/23/13/135705. Epub 2012 Mar 16.

PMID:
22421164
12.

Strong enhancement of solar cell efficiency due to quantum dots with built-in charge.

Sablon KA, Little JW, Mitin V, Sergeev A, Vagidov N, Reinhardt K.

Nano Lett. 2011 Jun 8;11(6):2311-7. doi: 10.1021/nl200543v. Epub 2011 May 5.

PMID:
21545165
13.
14.

Spin-polarized light-emitting diodes with Mn-doped InAs quantum dot nanomagnets as a spin aligner.

Chakrabarti S, Holub MA, Bhattacharya P, Mishima TD, Santos MB, Johnson MB, Blom DA.

Nano Lett. 2005 Feb;5(2):209-12.

PMID:
15794597
15.
16.

Leveraging crystal anisotropy for deterministic growth of InAs quantum dots with narrow optical linewidths.

Yakes MK, Yang L, Bracker AS, Sweeney TM, Brereton PG, Kim M, Kim CS, Vora PM, Park D, Carter SG, Gammon D.

Nano Lett. 2013 Oct 9;13(10):4870-5. doi: 10.1021/nl402744s. Epub 2013 Sep 5.

PMID:
23987910
17.

Exciton fine structure and spin relaxation in semiconductor colloidal quantum dots.

Kim J, Wong CY, Scholes GD.

Acc Chem Res. 2009 Aug 18;42(8):1037-46. doi: 10.1021/ar8002046.

PMID:
19425542
18.

Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces.

Wu J, Wang ZM, Dorogan VG, Li S, Mazur YI, Salamo GJ.

Nanoscale. 2011 Apr;3(4):1485-8. doi: 10.1039/c0nr00973c. Epub 2011 Mar 8.

PMID:
21384043
19.

Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer.

Tanabe K, Guimard D, Bordel D, Iwamoto S, Arakawa Y.

Opt Express. 2010 May 10;18(10):10604-8. doi: 10.1364/OE.18.010604.

PMID:
20588912
20.

Enhancement of the luminescence intensity of InAs/GaAs quantum dots induced by an external electric field.

Moskalenko ES, Larsson M, Karlsson KF, Holtz PO, Monemar B, Schoenfeld WV, Petroff PM.

Nano Lett. 2007 Jan;7(1):188-93.

PMID:
17212462

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