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Items: 1 to 20 of 126

1.

Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry.

Liao ZM, Wu HC, Kumar S, Duesberg GS, Zhou YB, Cross GL, Shvets IV, Yu DP.

Adv Mater. 2012 Apr 10;24(14):1862-6. doi: 10.1002/adma.201104796. Epub 2012 Mar 7.

PMID:
22407473
2.

Graphene magnetoresistance device in van der Pauw geometry.

Lu J, Zhang H, Shi W, Wang Z, Zheng Y, Zhang T, Wang N, Tang Z, Sheng P.

Nano Lett. 2011 Jul 13;11(7):2973-7. doi: 10.1021/nl201538m. Epub 2011 Jun 28.

PMID:
21696168
3.

Graphene as a tunnel barrier: graphene-based magnetic tunnel junctions.

Cobas E, Friedman AL, Van't Erve OM, Robinson JT, Jonker BT.

Nano Lett. 2012 Jun 13;12(6):3000-4. doi: 10.1021/nl3007616. Epub 2012 May 17.

PMID:
22577860
4.

A chemical route to graphene for device applications.

Gilje S, Han S, Wang M, Wang KL, Kaner RB.

Nano Lett. 2007 Nov;7(11):3394-8. Epub 2007 Oct 18.

PMID:
17944523
5.

Graphene/metal contacts: bistable states and novel memory devices.

Wang X, Xie W, Du J, Wang C, Zhao N, Xu JB.

Adv Mater. 2012 May 15;24(19):2614-9. doi: 10.1002/adma.201104574. Epub 2012 Apr 10.

PMID:
22488980
6.

High on/off ratios in bilayer graphene field effect transistors realized by surface dopants.

Szafranek BN, Schall D, Otto M, Neumaier D, Kurz H.

Nano Lett. 2011 Jul 13;11(7):2640-3. doi: 10.1021/nl200631m. Epub 2011 Jun 20.

PMID:
21688768
7.

Effects of layer stacking on the combination Raman modes in graphene.

Rao R, Podila R, Tsuchikawa R, Katoch J, Tishler D, Rao AM, Ishigami M.

ACS Nano. 2011 Mar 22;5(3):1594-9. doi: 10.1021/nn1031017. Epub 2011 Jan 4.

PMID:
21204569
8.

Graphene-metal interface: two-terminal resistance of low-mobility graphene in high magnetic fields.

Krstić V, Obergfell D, Hansel S, Rikken GL, Blokland JH, Ferreira MS, Roth S.

Nano Lett. 2008 Jun;8(6):1700-3. doi: 10.1021/nl080634k. Epub 2008 May 22.

PMID:
18494531
9.

Evidence for strain-induced local conductance modulations in single-layer graphene on SiO2.

Teague ML, Lai AP, Velasco J, Hughes CR, Beyer AD, Bockrath MW, Lau CN, Yeh NC.

Nano Lett. 2009 Jul;9(7):2542-6. doi: 10.1021/nl9005657.

PMID:
19534500
10.

Gate-induced insulating state in bilayer graphene devices.

Oostinga JB, Heersche HB, Liu X, Morpurgo AF, Vandersypen LM.

Nat Mater. 2008 Feb;7(2):151-7. Epub 2007 Dec 2.

PMID:
18059274
11.

Inking elastomeric stamps with micro-patterned, single layer graphene to create high-performance OFETs.

Kang SJ, Kim B, Kim KS, Zhao Y, Chen Z, Lee GH, Hone J, Kim P, Nuckolls C.

Adv Mater. 2011 Aug 16;23(31):3531-5. doi: 10.1002/adma.201101570. Epub 2011 Jul 4. No abstract available.

PMID:
21728192
12.

Negative and positive magnetoresistance of graphenes at room-temperature.

Yang H, Zhou H, Chen M, Qiu C, Yu F, Hu L, Wang G, Sun L.

J Nanosci Nanotechnol. 2013 Feb;13(2):1125-8.

PMID:
23646585
13.

Dielectric screening enhanced performance in graphene FET.

Chen F, Xia J, Ferry DK, Tao N.

Nano Lett. 2009 Jul;9(7):2571-4. doi: 10.1021/nl900725u.

PMID:
19496554
14.

Oxygen-aided synthesis of polycrystalline graphene on silicon dioxide substrates.

Chen J, Wen Y, Guo Y, Wu B, Huang L, Xue Y, Geng D, Wang D, Yu G, Liu Y.

J Am Chem Soc. 2011 Nov 9;133(44):17548-51. doi: 10.1021/ja2063633. Epub 2011 Oct 14.

PMID:
21988639
15.

The possibility of chemically inert, graphene-based all-carbon electronic devices with 0.8 eV gap.

Qi JS, Huang JY, Feng J, Shi da N, Li J.

ACS Nano. 2011 May 24;5(5):3475-82. doi: 10.1021/nn102322s. Epub 2011 Apr 7.

PMID:
21456598
16.

Graphene as transparent conducting electrodes in organic photovoltaics: studies in graphene morphology, hole transporting layers, and counter electrodes.

Park H, Brown PR, Bulović V, Kong J.

Nano Lett. 2012 Jan 11;12(1):133-40. doi: 10.1021/nl2029859. Epub 2011 Dec 1.

PMID:
22107487
17.

Tunnel anisotropic magnetoresistance in graphene with Rashba spin-orbit interaction.

Niu ZP.

J Phys Condens Matter. 2011 Nov 2;23(43):435302. doi: 10.1088/0953-8984/23/43/435302. Epub 2011 Oct 13.

PMID:
21996709
18.

Electrical properties of covalently immobilized single-layer graphene devices.

Liu LH, Nandamuri G, Solanki R, Yan M.

J Nanosci Nanotechnol. 2011 Feb;11(2):1288-92.

PMID:
21456173
19.

Nanoscale fabrication of a three-dimensional stack of graphene layers using a focused ion beam.

Venugopal G, Kim SJ.

J Nanosci Nanotechnol. 2011 Jul;11(7):5909-14.

PMID:
22121630
20.

Flexible holey graphene paper electrodes with enhanced rate capability for energy storage applications.

Zhao X, Hayner CM, Kung MC, Kung HH.

ACS Nano. 2011 Nov 22;5(11):8739-49. doi: 10.1021/nn202710s. Epub 2011 Oct 18.

PMID:
21980979

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