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Items: 1 to 20 of 83

1.

Immobilization of enzyme and antibody on ALD-HfO2-EIS structure by NH3 plasma treatment.

Wang IS, Lin YT, Huang CH, Lu TF, Lue CE, Yang P, Pijanswska DG, Yang CM, Wang JC, Yu JS, Chang YS, Chou C, Lai CS.

Nanoscale Res Lett. 2012 Mar 8;7:179. doi: 10.1186/1556-276X-7-179.

2.

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

Zhang XY, Hsu CH, Lien SY, Chen SY, Huang W, Yang CH, Kung CY, Zhu WZ, Xiong FB, Meng XG.

Nanoscale Res Lett. 2017 Dec;12(1):324. doi: 10.1186/s11671-017-2098-5. Epub 2017 May 4.

3.

Post-Cleaning Effect on a HfO2 Gate Stack Using a NF3/NH3 Plasma.

Lee MS, Oh HJ, Lee JH, Lee IG, Shin WG, Kim KD, Park JG, Ko DH.

J Nanosci Nanotechnol. 2016 May;16(5):4808-13.

PMID:
27483826
4.

Structural properties and sensing performance of high-k Nd2TiO5 thin layer-based electrolyte-insulator-semiconductor for pH detection and urea biosensing.

Pan TM, Lin JC, Wu MH, Lai CS.

Biosens Bioelectron. 2009 May 15;24(9):2864-70. doi: 10.1016/j.bios.2009.02.018. Epub 2009 Feb 27.

PMID:
19297144
5.

Corrosion Protection of Copper Using Al2O3, TiO2, ZnO, HfO2, and ZrO2 Atomic Layer Deposition.

Daubert JS, Hill GT, Gotsch HN, Gremaud AP, Ovental JS, Williams PS, Oldham CJ, Parsons GN.

ACS Appl Mater Interfaces. 2017 Feb 1;9(4):4192-4201. doi: 10.1021/acsami.6b13571. Epub 2017 Jan 18.

PMID:
28098440
6.

Improved growth behavior of atomic-layer-deposited high-k dielectrics on multilayer MoS2 by oxygen plasma pretreatment.

Yang J, Kim S, Choi W, Park SH, Jung Y, Cho MH, Kim H.

ACS Appl Mater Interfaces. 2013 Jun 12;5(11):4739-44. doi: 10.1021/am303261c. Epub 2013 May 30.

PMID:
23683268
7.

Influence of NH3 plasma and Ti doping on pH-sensitive CeO2 electrolyte-insulator-semiconductor biosensors.

Kao CH, Chang CW, Tzu Chen Y, Ming Su W, Cheng Lu C, Lin CY, Chen H.

Sci Rep. 2017 May 25;7(1):2405. doi: 10.1038/s41598-017-02692-2.

8.

Label-free detection of rheumatoid factor using YbYxOy electrolyte-insulator-semiconductor devices.

Pan TM, Lin TW, Chen CY.

Anal Chim Acta. 2015 Sep 3;891:304-11. doi: 10.1016/j.aca.2015.08.014. Epub 2015 Aug 22.

PMID:
26388391
9.

SnO2 anode surface passivation by atomic layer deposited HfO2 improves Li-ion battery performance.

Yesibolati N, Shahid M, Chen W, Hedhili MN, Reuter MC, Ross FM, Alshareef HN.

Small. 2014 Jul 23;10(14):2849-58. doi: 10.1002/smll.201303898. Epub 2014 Mar 14.

PMID:
24634208
10.

Effects of trimethylaluminium and tetrakis(ethylmethylamino) hafnium in the early stages of the atomic-layer-deposition of aluminum oxide and hafnium oxide on hydroxylated GaN nanoclusters.

León-Plata PA, Coan MR, Seminario JM.

J Mol Model. 2013 Oct;19(10):4419-32. doi: 10.1007/s00894-013-1956-z. Epub 2013 Aug 7.

PMID:
23918223
11.

High-κ GdTixOy sensing membrane-based electrolyte-insulator-semiconductor with magnetic nanoparticles as enzyme carriers for protein contamination-free glucose biosensing.

Wu MH, Yang HW, Hua MY, Peng YB, Pan TM.

Biosens Bioelectron. 2013 Sep 15;47:99-105. doi: 10.1016/j.bios.2013.03.013. Epub 2013 Mar 20.

PMID:
23567628
12.

Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics.

Kang YS, Kim DK, Kang HK, Jeong KS, Cho MH, Ko DH, Kim H, Seo JH, Kim DC.

ACS Appl Mater Interfaces. 2014 Mar 26;6(6):3896-906. doi: 10.1021/am4049496. Epub 2014 Mar 12.

PMID:
24467437
13.

Atomic layer deposition of hafnium oxide from hafnium chloride and water.

Mukhopadhyay AB, Musgrave CB, Fdez Sanz J.

J Am Chem Soc. 2008 Sep 10;130(36):11996-2006. doi: 10.1021/ja801616u. Epub 2008 Aug 13.

PMID:
18698777
14.

Atomic layer deposition of 1D and 2D nickel nanostructures on graphite.

Ryu SW, Yoon J, Moon HS, Shong B, Kim H, Lee HB.

Nanotechnology. 2017 Mar 17;28(11):115301. doi: 10.1088/1361-6528/aa5aec. Epub 2017 Jan 20.

PMID:
28106007
15.

Grazing incidence-X-ray fluorescence spectrometry for the compositional analysis of nanometer-thin high-kappa dielectric HfO2 layers.

Hellin D, Delabie A, Puurunen RL, Beaven P, Conard T, Brijs B, De Gendt S, Vinckier C.

Anal Sci. 2005 Jul;21(7):845-50.

16.

Growth and properties of hafnicone and HfO(2)/hafnicone nanolaminate and alloy films using molecular layer deposition techniques.

Lee BH, Anderson VR, George SM.

ACS Appl Mater Interfaces. 2014 Oct 8;6(19):16880-7. doi: 10.1021/am504341r. Epub 2014 Sep 25.

PMID:
25203487
17.

Structural evolution and the control of defects in atomic layer deposited HfO2-Al2O3 stacked films on GaAs.

Kang YS, Kim DK, Jeong KS, Cho MH, Kim CY, Chung KB, Kim H, Kim DC.

ACS Appl Mater Interfaces. 2013 Mar;5(6):1982-9. doi: 10.1021/am302803f. Epub 2013 Mar 8.

PMID:
23438318
18.

Comparing electron recombination via interfacial modifications in dye-sensitized solar cells.

Li L, Chen S, Xu C, Zhao Y, Rudawski NG, Ziegler KJ.

ACS Appl Mater Interfaces. 2014 Dec 10;6(23):20978-84. doi: 10.1021/am505742y. Epub 2014 Nov 26.

PMID:
25412271
19.

Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition.

Shih HY, Lin MC, Chen LY, Chen MJ.

Nanotechnology. 2015 Jan 9;26(1):014002. doi: 10.1088/0957-4484/26/1/014002. Epub 2014 Dec 10.

PMID:
25494474
20.

TEM-based metrology for HfO2 layers and nanotubes formed in anodic aluminum oxide nanopore structures.

Perez I, Robertson E, Banerjee P, Henn-Lecordier L, Son SJ, Lee SB, Rubloff GW.

Small. 2008 Aug;4(8):1223-32. doi: 10.1002/smll.200700815.

PMID:
18623293

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