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Items: 1 to 20 of 133

1.

Hole subbands in freestanding nanowires: six-band versus eight-band k·p modelling.

Ravi Kishore VV, Čukarić N, Partoens B, Tadić M, Peeters FM.

J Phys Condens Matter. 2012 Apr 4;24(13):135302. doi: 10.1088/0953-8984/24/13/135302. Epub 2012 Mar 5.

PMID:
22392836
2.

From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires.

Potts H, Friedl M, Amaduzzi F, Tang K, Tütüncüoglu G, Matteini F, Alarcon Lladó E, McIntyre PC, Fontcuberta i Morral A.

Nano Lett. 2016 Jan 13;16(1):637-43. doi: 10.1021/acs.nanolett.5b04367. Epub 2015 Dec 22.

3.

Effects of a shell on the electronic properties of nanowire superlattices.

Niquet YM.

Nano Lett. 2007 Apr;7(4):1105-9. Epub 2007 Mar 27.

PMID:
17385931
4.

Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire.

Yu Y, Li MF, He JF, He YM, Wei YJ, He Y, Zha GW, Shang XJ, Wang J, Wang LJ, Wang GW, Ni HQ, Lu CY, Niu ZC.

Nano Lett. 2013 Apr 10;13(4):1399-404. doi: 10.1021/nl304157d. Epub 2013 Mar 8.

PMID:
23464836
5.

In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires.

Heiss M, Ketterer B, Uccelli E, Morante JR, Arbiol J, Fontcuberta i Morral A.

Nanotechnology. 2011 May 13;22(19):195601. doi: 10.1088/0957-4484/22/19/195601. Epub 2011 Mar 23.

PMID:
21430322
6.

Evolution of epitaxial InAs nanowires on GaAs 111B.

Zhang X, Zou J, Paladugu M, Guo Y, Wang Y, Kim Y, Joyce HJ, Gao Q, Tan HH, Jagadish C.

Small. 2009 Mar;5(3):366-9. doi: 10.1002/smll.200800690. No abstract available.

PMID:
19152357
7.

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.

Joyce HJ, Docherty CJ, Gao Q, Tan HH, Jagadish C, Lloyd-Hughes J, Herz LM, Johnston MB.

Nanotechnology. 2013 May 31;24(21):214006. doi: 10.1088/0957-4484/24/21/214006. Epub 2013 Apr 25.

PMID:
23619012
8.

Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires.

Montazeri M, Fickenscher M, Smith LM, Jackson HE, Yarrison-Rice J, Kang JH, Gao Q, Tan HH, Jagadish C, Guo Y, Zou J, Pistol ME, Pryor CE.

Nano Lett. 2010 Mar 10;10(3):880-6. doi: 10.1021/nl903547r.

PMID:
20131863
9.

Growth of vertical InAs nanowires on heterostructured substrates.

Roddaro S, Caroff P, Biasiol G, Rossi F, Bocchi C, Nilsson K, Fröberg L, Wagner JB, Samuelson L, Wernersson LE, Sorba L.

Nanotechnology. 2009 Jul 15;20(28):285303. doi: 10.1088/0957-4484/20/28/285303. Epub 2009 Jun 23.

PMID:
19546499
10.

Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber.

Tsukamoto S, Honma T, Bell GR, Ishii A, Arakawa Y.

Small. 2006 Mar;2(3):386-9. No abstract available. Erratum in: Small. 2006 May;2(5):587.

PMID:
17193056
11.

Synthesis and patterning of gold nanostructures on InP and GaAs via galvanic displacement.

Hormozi Nezhad MR, Aizawa M, Porter LA Jr, Ribbe AE, Buriak JM.

Small. 2005 Nov;1(11):1076-81. No abstract available.

PMID:
17193399
12.

Observation of degenerate one-dimensional sub-bands in cylindrical InAs nanowires.

Ford AC, Kumar SB, Kapadia R, Guo J, Javey A.

Nano Lett. 2012 Mar 14;12(3):1340-3. doi: 10.1021/nl203895x. Epub 2012 Feb 1.

PMID:
22268516
13.

P-doping mechanisms in catalyst-free gallium arsenide nanowires.

Dufouleur J, Colombo C, Garma T, Ketterer B, Uccelli E, Nicotra M, Fontcuberta i Morral A.

Nano Lett. 2010 May 12;10(5):1734-40. doi: 10.1021/nl100157w.

PMID:
20373777
14.

Reduced thermal conductivity in nanoengineered rough Ge and GaAs nanowires.

Martin PN, Aksamija Z, Pop E, Ravaioli U.

Nano Lett. 2010 Apr 14;10(4):1120-4. doi: 10.1021/nl902720v.

PMID:
20222669
15.

Direct measurement of band edge discontinuity in individual core-shell nanowires by photocurrent spectroscopy.

Chen G, Sun G, Ding YJ, Prete P, Miccoli I, Lovergine N, Shtrikman H, Kung P, Livneh T, Spanier JE.

Nano Lett. 2013 Sep 11;13(9):4152-7. doi: 10.1021/nl401737u. Epub 2013 Aug 12.

PMID:
23937245
16.

Integrated semiconductor nanocrystal and epitaxical nanostructure systems: structural and optical behavior.

Madhukar A, Lu S, Konkar A, Zhang Y, Ho M, Hughes SM, Alivisatos AP.

Nano Lett. 2005 Mar;5(3):479-82.

PMID:
15755098
17.

Unit cell structure of crystal polytypes in InAs and InSb nanowires.

Kriegner D, Panse C, Mandl B, Dick KA, Keplinger M, Persson JM, Caroff P, Ercolani D, Sorba L, Bechstedt F, Stangl J, Bauer G.

Nano Lett. 2011 Apr 13;11(4):1483-9. doi: 10.1021/nl1041512. Epub 2011 Mar 24.

PMID:
21434674
18.

Semiconductor nanocrystal quantum dots on single crystal semiconductor substrates: high resolution transmission electron microscopy.

Konkar A, Lu S, Madhukar A, Hughes SM, Alivisatos AP.

Nano Lett. 2005 May;5(5):969-73.

PMID:
15884904
19.

Effects of gold diffusion on n-type doping of GaAs nanowires.

Tambe MJ, Ren S, Gradecak S.

Nano Lett. 2010 Nov 10;10(11):4584-9. doi: 10.1021/nl102594e. Epub 2010 Oct 12.

PMID:
20939583
20.

Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy.

Lugani L, Ercolani D, Sorba L, Sibirev NV, Timofeeva MA, Dubrovskii VG.

Nanotechnology. 2012 Mar 9;23(9):095602. doi: 10.1088/0957-4484/23/9/095602. Epub 2012 Feb 10.

PMID:
22322330

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