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Items: 1 to 20 of 133

1.

The steric effect of aromatic pendant groups and electrical bistability in π-stacked polymers for memory devices.

Zhang B, Chen Y, Zhang Y, Chen X, Chi Z, Yang J, Ou J, Zhang MQ, Li D, Wang D, Liu M, Zhou J.

Phys Chem Chem Phys. 2012 Apr 7;14(13):4640-50. doi: 10.1039/c2cp23953a. Epub 2012 Feb 27.

PMID:
22370967
2.

Conductivity switching and electronic memory effect in polymers with pendant azobenzene chromophores.

Lim SL, Li NJ, Lu JM, Ling QD, Zhu CX, Kang ET, Neoh KG.

ACS Appl Mater Interfaces. 2009 Jan;1(1):60-71. doi: 10.1021/am800001e.

PMID:
20355755
3.

Different Steric-Twist-Induced Ternary Memory Characteristics in Nonconjugated Copolymers with Pendant Naphthalene and 1,8-Naphthalimide Moieties.

Wang M, Li Z, Li H, He J, Li N, Xu Q, Lu J.

Chem Asian J. 2017 Oct 18;12(20):2744-2748. doi: 10.1002/asia.201701044. Epub 2017 Sep 21.

PMID:
28834320
4.

Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.

Liu J, Yin Z, Cao X, Zhao F, Lin A, Xie L, Fan Q, Boey F, Zhang H, Huang W.

ACS Nano. 2010 Jul 27;4(7):3987-92. doi: 10.1021/nn100877s.

PMID:
20540553
5.

Dynamic random access memory effect and memory device derived from a functional polyimide containing electron donor-acceptor pairs in the main chain.

Tian G, Wu D, Qi S, Wu Z, Wang X.

Macromol Rapid Commun. 2011 Feb 16;32(4):384-9. doi: 10.1002/marc.201000570. Epub 2010 Dec 3.

PMID:
21433188
6.

Programmable digital memory devices based on nanoscale thin films of a thermally dimensionally stable polyimide.

Lee TJ, Chang CW, Hahm SG, Kim K, Park S, Kim DM, Kim J, Kwon WS, Liou GS, Ree M.

Nanotechnology. 2009 Apr 1;20(13):135204. doi: 10.1088/0957-4484/20/13/135204. Epub 2009 Mar 10.

PMID:
19420490
7.

Tristable electrical conductivity switching in a polyfluorene-diphenylpyridine copolymer with pendant carbazole groups.

Liu G, Liaw DJ, Lee WY, Ling QD, Zhu CX, Chan DS, Kang ET, Neoh KG.

Philos Trans A Math Phys Eng Sci. 2009 Oct 28;367(1905):4203-14. doi: 10.1098/rsta.2008.0262.

8.

Bistable electrical switching and memory effects in a thin film of copolymer containing electron donor-acceptor moieties and europium complexes.

Ling QD, Wang W, Song Y, Zhu CX, Chan DS, Kang ET, Neoh KG.

J Phys Chem B. 2006 Nov 30;110(47):23995-4001.

PMID:
17125369
9.

Tunable electrical memory characteristics using polyimide:polycyclic aromatic compound blends on flexible substrates.

Yu AD, Kurosawa T, Chou YH, Aoyagi K, Shoji Y, Higashihara T, Ueda M, Liu CL, Chen WC.

ACS Appl Mater Interfaces. 2013 Jun 12;5(11):4921-9. doi: 10.1021/am4006594. Epub 2013 May 16.

PMID:
23646879
10.

Nonvolatile write-once-read-many times memory devices based on the composites of poly(4-vinylphenol)/Vulcan XC-72.

Song S, Kim TW, Cho B, Ji Y, Lee T.

J Nanosci Nanotechnol. 2011 May;11(5):4492-5.

PMID:
21780484
11.

Nonvolatile rewritable memory effects in graphene oxide functionalized by conjugated polymer containing fluorene and carbazole units.

Zhang B, Liu YL, Chen Y, Neoh KG, Li YX, Zhu CX, Tok ES, Kang ET.

Chemistry. 2011 Sep 5;17(37):10304-11. doi: 10.1002/chem.201100807. Epub 2011 Jul 29.

PMID:
21805510
12.

Oligosiloxane functionalized with pendant (1,3-bis(9-carbazolyl)benzene) (mCP) for solution-processed organic electronics.

Sun D, Yang Z, Ren Z, Li H, Bryce MR, Ma D, Yan S.

Chemistry. 2014 Dec 1;20(49):16233-41. doi: 10.1002/chem.201402374. Epub 2014 Oct 13.

PMID:
25307853
13.

Multilayer stacked low-temperature-reduced graphene oxide films: preparation, characterization, and application in polymer memory devices.

Liu J, Lin Z, Liu T, Yin Z, Zhou X, Chen S, Xie L, Boey F, Zhang H, Huang W.

Small. 2010 Jul 19;6(14):1536-42. doi: 10.1002/smll.201000328.

PMID:
20564728
14.

Electrical Conductance Tuning and Bistable Switching in Poly(N-vinylcarbazole)-Carbon Nanotube Composite Films.

Liu G, Ling QD, Teo EY, Zhu CX, Chan DS, Neoh KG, Kang ET.

ACS Nano. 2009 Jul 28;3(7):1929-37. doi: 10.1021/nn900319q. Epub 2009 Jun 1.

PMID:
19485330
15.

Programmable polymer thin film and non-volatile memory device.

Ouyang J, Chu CW, Szmanda CR, Ma L, Yang Y.

Nat Mater. 2004 Dec;3(12):918-22. Epub 2004 Nov 28.

PMID:
15568028
16.

Resistive switching memory devices based on electrical conductance tuning in poly(4-vinyl phenol)-oxadiazole composites.

Sun Y, Miao F, Li R, Wen D.

Phys Chem Chem Phys. 2015 Nov 28;17(44):29978-84. doi: 10.1039/c5cp05481h. Epub 2015 Oct 22.

PMID:
26490192
17.

Programmable bipolar and unipolar nonvolatile memory devices based on poly(2-(N-carbazolyl)ethyl methacrylate) end-capped with fullerene.

Hahm SG, Kang NG, Kwon W, Kim K, Ko YG, Ahn S, Kang BG, Chang T, Lee JS, Ree M.

Adv Mater. 2012 Feb 21;24(8):1062-6. doi: 10.1002/adma.201103647. Epub 2012 Jan 26.

PMID:
22279006
18.

Programmable permanent data storage characteristics of nanoscale thin films of a thermally stable aromatic polyimide.

Kim DM, Park S, Lee TJ, Hahm SG, Kim K, Kim JC, Kwon W, Ree M.

Langmuir. 2009 Oct 6;25(19):11713-9. doi: 10.1021/la901896z.

PMID:
19743827
19.

Conjugated fluorene based rod-coil block copolymers and their PCBM composites for resistive memory switching devices.

Lian SL, Liu CL, Chen WC.

ACS Appl Mater Interfaces. 2011 Nov;3(11):4504-11. doi: 10.1021/am201190s. Epub 2011 Oct 28.

PMID:
21999193
20.

Polyaniline nanofiber/gold nanoparticle nonvolatile memory.

Tseng RJ, Huang J, Ouyang J, Kaner RB, Yang Y.

Nano Lett. 2005 Jun;5(6):1077-80.

PMID:
15943446

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