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Items: 1 to 20 of 122

1.

Fabrication of unipolar graphene field-effect transistors by modifying source and drain electrode interfaces with zinc porphyrin.

Khaderbad MA, Tjoa V, Rao M, Phandripande R, Madhu S, Wei J, Ravikanth M, Mathews N, Mhaisalkar SG, Rao VR.

ACS Appl Mater Interfaces. 2012 Mar;4(3):1434-9. doi: 10.1021/am201691s. Epub 2012 Feb 28.

PMID:
22332817
2.

High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis.

Joung D, Chunder A, Zhai L, Khondaker SI.

Nanotechnology. 2010 Apr 23;21(16):165202. doi: 10.1088/0957-4484/21/16/165202. Epub 2010 Mar 26.

PMID:
20348593
3.

Facile patterning of reduced graphene oxide film into microelectrode array for highly sensitive sensing.

Li F, Xue M, Ma X, Zhang M, Cao T.

Anal Chem. 2011 Aug 15;83(16):6426-30. doi: 10.1021/ac200939g. Epub 2011 Jul 27.

PMID:
21761929
4.

Solution-processable triindoles as hole selective materials in organic solar cells.

Shelton SW, Chen TL, Barclay DE, Ma B.

ACS Appl Mater Interfaces. 2012 May;4(5):2534-40. doi: 10.1021/am300228w. Epub 2012 Apr 20.

PMID:
22497547
5.

n-Type reduced graphene oxide field-effect transistors (FETs) from photoactive metal oxides.

Yoo H, Kim Y, Lee J, Lee H, Yoon Y, Kim G, Lee H.

Chemistry. 2012 Apr 16;18(16):4923-9. doi: 10.1002/chem.201103967. Epub 2012 Mar 15.

PMID:
22422712
6.

Charge injection across self-assembly monolayers in organic field-effect transistors: odd-even effects.

Stoliar P, Kshirsagar R, Massi M, Annibale P, Albonetti C, de Leeuw DM, Biscarini F.

J Am Chem Soc. 2007 May 23;129(20):6477-84. Epub 2007 May 2.

PMID:
17472377
7.

Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing.

Jeong YJ, Yun DJ, Jang J, Park S, An TK, Kim LH, Kim SH, Park CE.

Phys Chem Chem Phys. 2015 Mar 7;17(9):6635-43. doi: 10.1039/c4cp05787b.

PMID:
25665649
8.

High-performance flexible graphene field effect transistors with ion gel gate dielectrics.

Kim BJ, Jang H, Lee SK, Hong BH, Ahn JH, Cho JH.

Nano Lett. 2010 Sep 8;10(9):3464-6. doi: 10.1021/nl101559n.

PMID:
20704323
9.

Polaron coupling in graphene field effect transistors on patterned self-assembled monolayer.

Yokota K, Takai K, Kudo Y, Sato Y, Enoki T.

Phys Chem Chem Phys. 2014 Mar 7;16(9):4313-9. doi: 10.1039/c3cp54669a.

PMID:
24452397
10.

Effect of self-assembled monolayers on charge injection and transport in poly(3-hexylthiophene)-based field-effect transistors at different channel length scales.

Singh KA, Nelson TL, Belot JA, Young TM, Dhumal NR, Kowalewski T, McCullough RD, Nachimuthu P, Thevuthasan S, Porter LM.

ACS Appl Mater Interfaces. 2011 Aug;3(8):2973-8. doi: 10.1021/am200449x. Epub 2011 Jul 26.

PMID:
21790138
11.

Driving forces for the self-assembly of graphene oxide on organic monolayers.

Kirschner J, Wang Z, Eigler S, Steinrück HP, Jäger CM, Clark T, Hirsch A, Halik M.

Nanoscale. 2014 Oct 7;6(19):11344-50. doi: 10.1039/c4nr02527j.

PMID:
25140920
12.

Multiscale charge injection and transport properties in self-assembled monolayers of biphenyl thiols with varying torsion angles.

Masillamani AM, Crivillers N, Orgiu E, Rotzler J, Bossert D, Thippeswamy R, Zharnikov M, Mayor M, Samorì P.

Chemistry. 2012 Aug 13;18(33):10335-47. doi: 10.1002/chem.201201858. Epub 2012 Jul 24.

PMID:
22829498
13.

Enhanced photocurrent generation of binary self-assembled monolayers of di-(3-aminopropyl)-viologen and methylviologen on indium tin oxide.

Lee M, Hyung KH, Lee W, Ahn H, Cho BW, Noh J, Han SH.

J Nanosci Nanotechnol. 2011 May;11(5):4389-93.

PMID:
21780463
14.

Solution-processable organic dielectrics for graphene electronics.

Mattevi C, Colléaux F, Kim H, Lin YH, Park KT, Chhowalla M, Anthopoulos TD.

Nanotechnology. 2012 Aug 31;23(34):344017. doi: 10.1088/0957-4484/23/34/344017. Epub 2012 Aug 10.

PMID:
22885685
15.

Photoelectrochemical polymerization of thiophene on self-assembled RuL2(NCS)2/di(3-aminopropyl)viologen on indium thin oxide.

Lee W, Hyung KH, Hwang Y, Cho BW, Lee SH, Han SH.

J Nanosci Nanotechnol. 2011 May;11(5):4501-5.

PMID:
21780486
16.

Design, synthesis, and characterization of ladder-type molecules and polymers. Air-stable, solution-processable n-channel and ambipolar semiconductors for thin-film transistors via experiment and theory.

Usta H, Risko C, Wang Z, Huang H, Deliomeroglu MK, Zhukhovitskiy A, Facchetti A, Marks TJ.

J Am Chem Soc. 2009 Apr 22;131(15):5586-608. doi: 10.1021/ja809555c.

PMID:
19331320
17.

Ionization energy and energy gap structure of MoSI molecular wires: Kelvin probe, ultraviolet photoelectron spectroscopy, and cyclic voltammetry measurements.

Strojnik M, Omerzu A, Majkić A, Mihailovic PM, Lukan J, Bavdek G, Bratina G, Cvetko D, Topolovsek P, Mihailovic D.

Langmuir. 2011 Apr 19;27(8):4296-9. doi: 10.1021/la1050767. Epub 2011 Mar 17.

PMID:
21413723
18.
19.

Surface engineering of reduced graphene oxide for controllable ambipolar flash memories.

Han ST, Zhou Y, Sonar P, Wei H, Zhou L, Yan Y, Lee CS, Roy VA.

ACS Appl Mater Interfaces. 2015 Jan 28;7(3):1699-708. doi: 10.1021/am5072833. Epub 2015 Jan 13.

PMID:
25537669
20.

Real-time DNA detection using Pt nanoparticle-decorated reduced graphene oxide field-effect transistors.

Yin Z, He Q, Huang X, Zhang J, Wu S, Chen P, Lu G, Chen P, Zhang Q, Yan Q, Zhang H.

Nanoscale. 2012 Jan 7;4(1):293-7. doi: 10.1039/c1nr11149c. Epub 2011 Nov 16.

PMID:
22089471

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