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Items: 1 to 20 of 165

1.

Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy.

Bollani M, Chrastina D, Montuori V, Terziotti D, Bonera E, Vanacore GM, Tagliaferri A, Sordan R, Spinella C, Nicotra G.

Nanotechnology. 2012 Feb 3;23(4):045302. doi: 10.1088/0957-4484/23/4/045302. Epub 2012 Jan 4.

PMID:
22214840
2.

Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition.

Bollani M, Chrastina D, Fedorov A, Sordan R, Picco A, Bonera E.

Nanotechnology. 2010 Nov 26;21(47):475302. doi: 10.1088/0957-4484/21/47/475302. Epub 2010 Oct 29.

PMID:
21030775
3.

Microphotoluminescence and perfect ordering of SiGe islands on pit-patterned Si(001) substrates.

Hackl F, Grydlik M, Brehm M, Groiss H, Schäffler F, Fromherz T, Bauer G.

Nanotechnology. 2011 Apr 22;22(16):165302. doi: 10.1088/0957-4484/22/16/165302. Epub 2011 Mar 11.

PMID:
21393825
4.

Ordered Arrays of SiGe Islands from Low-Energy PECVD.

Bollani M, Bonera E, Chrastina D, Fedorov A, Montuori V, Picco A, Tagliaferri A, Vanacore G, Sordan R.

Nanoscale Res Lett. 2010 Sep 7;5(12):1917-20. doi: 10.1007/s11671-010-9773-0.

5.

Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates.

Grydlik M, Langer G, Fromherz T, Schäffler F, Brehm M.

Nanotechnology. 2013 Mar 15;24(10):105601. doi: 10.1088/0957-4484/24/10/105601. Epub 2013 Feb 15.

PMID:
23416837
6.

Fabrication of core-shell nanostructures via silicon on insulator dewetting and germanium condensation: towards a strain tuning method for SiGe-based heterostructures in a three-dimensional geometry.

Naffouti M, David T, Benkouider A, Favre L, Cabie M, Ronda A, Berbezier I, Abbarchi M.

Nanotechnology. 2016 Jul 29;27(30):305602. doi: 10.1088/0957-4484/27/30/305602. Epub 2016 Jun 15.

PMID:
27302611
7.

Synthesis and fundamental studies of (H3Ge)xSiH4-x molecules: precursors to semiconductor hetero- and nanostructures on Si.

Ritter CJ, Hu C, Chizmeshya AV, Tolle J, Klewer D, Tsong IS, Kouvetakis J.

J Am Chem Soc. 2005 Jul 13;127(27):9855-64.

PMID:
15998091
8.

Strain relief and shape oscillations in site-controlled coherent SiGe islands.

Hrauda N, Zhang JJ, Groiss H, Etzelstorfer T, Holý V, Bauer G, Deiter C, Seeck OH, Stangl J.

Nanotechnology. 2013 Aug 23;24(33):335707. doi: 10.1088/0957-4484/24/33/335707. Epub 2013 Jul 26.

PMID:
23892543
9.

Ge-rich SiGe-on-insulator for waveguide optical modulator application fabricated by Ge condensation and SiGe regrowth.

Kim Y, Yokoyama M, Taoka N, Takenaka M, Takagi S.

Opt Express. 2013 Aug 26;21(17):19615-23. doi: 10.1364/OE.21.019615.

PMID:
24105508
10.

Quantum-confined direct band transitions in tensile strained Ge/SiGe quantum wells on silicon substrates.

Chen Y, Li C, Lai H, Chen S.

Nanotechnology. 2010 Mar 19;21(11):115207. doi: 10.1088/0957-4484/21/11/115207. Epub 2010 Feb 24.

PMID:
20179329
11.

Comparison of Si and Ge low-loss spectra to interpret the Ge contrast in EFTEM images of Si(1-x) Ge(x) nanostructures.

Pantel R, Cheynet MC, Tichelaar FD.

Micron. 2006;37(7):657-65. Epub 2006 Feb 17.

PMID:
16529938
12.

Synthesis of butane-like SiGe hydrides: enabling precursors for CVD of Ge-rich semiconductors.

Chizmeshya AV, Ritter CJ, Hu C, Tice JB, Tolle J, Nieman RA, Tsong IS, Kouvetakis J.

J Am Chem Soc. 2006 May 31;128(21):6919-30.

PMID:
16719472
13.

Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars.

Kozlowski G, Zaumseil P, Schubert MA, Yamamoto Y, Bauer J, Schülli TU, Tillack B, Schroeder T.

Nanotechnology. 2012 Mar 23;23(11):115704. doi: 10.1088/0957-4484/23/11/115704. Epub 2012 Feb 28.

PMID:
22369884
14.

X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates.

Zaumseil P, Kozlowski G, Yamamoto Y, Schubert MA, Schroeder T.

J Appl Crystallogr. 2013 Aug 1;46(Pt 4):868-873. Epub 2013 Jun 7.

15.

Temperature dependent low energy electron microscopy study of Ge island growth on bare and Ga terminated Si(112).

Speckmann M, Schmidt T, Flege JI, Sadowski JT, Sutter P, Falta J.

J Phys Condens Matter. 2009 Aug 5;21(31):314020. doi: 10.1088/0953-8984/21/31/314020. Epub 2009 Jul 7.

PMID:
21828581
16.

DC heating induced shape transformation of Ge structures on ultraclean Si(5 5 12) surfaces.

Dash JK, Rath A, Juluri RR, Raman PS, Müller K, Rosenauer A, Satyam PV.

J Phys Condens Matter. 2011 Apr 6;23(13):135002. doi: 10.1088/0953-8984/23/13/135002. Epub 2011 Mar 14.

PMID:
21403241
17.

Strain field mapping of dislocations in a Ge/Si heterostructure.

Liu Q, Zhao C, Su S, Li J, Xing Y, Cheng B.

PLoS One. 2013 Apr 23;8(4):e62672. doi: 10.1371/journal.pone.0062672. Print 2013.

18.

Inelastic electron scattering observation using energy filtered transmission electron microscopy for silicon -- germanium nanostructures imaging.

Pantel R, Jullian S, Delille D, Dutartre D, Chantre A, Kermarrec O, Campidelli Y, Kwakman LF.

Micron. 2003;34(3-5):239-47.

PMID:
12895496
19.

The impact of erbium incorporation on the structure and photophysics of silicon-germanium nanowires.

Wu J, Wieligor M, Zerda TW, Coffer JL.

Nanoscale. 2010 Dec;2(12):2657-67. doi: 10.1039/c0nr00476f. Epub 2010 Oct 8.

PMID:
20931125
20.

Efficient electron and hole doping in compositionally abrupt Si/Ge nanowires.

Li P, Zhou R, Pan B, Zeng XC.

Nanoscale. 2013 May 7;5(9):3880-8. doi: 10.1039/c3nr00563a. Epub 2013 Mar 25.

PMID:
23525137

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