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Items: 1 to 20 of 103

1.

Hidden defects in silicon nanowires.

den Hertog MI, Cayron C, Gentile P, Dhalluin F, Oehler F, Baron T, Rouviere JL.

Nanotechnology. 2012 Jan 20;23(2):025701. doi: 10.1088/0957-4484/23/2/025701.

PMID:
22166492
2.

Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins.

Cayron C, Den Hertog M, Latu-Romain L, Mouchet C, Secouard C, Rouviere JL, Rouviere E, Simonato JP.

J Appl Crystallogr. 2009 Apr 1;42(Pt 2):242-252. Epub 2009 Jan 24.

3.

Observation of 'hidden' planar defects in boron carbide nanowires and identification of their orientations.

Guan Z, Cao B, Yang Y, Jiang Y, Li D, Xu TT.

Nanoscale Res Lett. 2014 Jan 15;9(1):30. doi: 10.1186/1556-276X-9-30.

4.

Ex situ vapor phase boron doping of silicon nanowires using BBr3.

Doerk GS, Lestari G, Liu F, Carraro C, Maboudian R.

Nanoscale. 2010 Jul;2(7):1165-70. doi: 10.1039/c0nr00127a. Epub 2010 May 22.

PMID:
20648344
5.

Growth of Ga-doped ZnS nanowires constructed by self-assembled hexagonal platelets with excellent photocatalytic properties.

Chen YC, Wang CH, Lin HY, Li BH, Chen WT, Liu CP.

Nanotechnology. 2010 Nov 12;21(45):455604. doi: 10.1088/0957-4484/21/45/455604. Epub 2010 Oct 14.

PMID:
20947945
6.

Orientation specific synthesis of kinked silicon nanowires grown by the vapour-liquid-solid mechanism.

Hyun YJ, Lugstein A, Steinmair M, Bertagnolli E, Pongratz P.

Nanotechnology. 2009 Mar 25;20(12):125606. doi: 10.1088/0957-4484/20/12/125606. Epub 2009 Mar 4.

PMID:
19420475
7.

Ordered stacking fault arrays in silicon nanowires.

Lopez FJ, Hemesath ER, Lauhon LJ.

Nano Lett. 2009 Jul;9(7):2774-9. doi: 10.1021/nl901315s.

PMID:
19527044
8.

Two-step growth of hexagonal-shaped ZnO nanowires and nanorods and their properties.

Umar A, Kim SH, Kim JH, Hahn YB.

J Nanosci Nanotechnol. 2007 Dec;7(12):4522-8.

PMID:
18283837
9.

Atomic structural analysis of nanowire defects and polytypes enabled through cross-sectional lattice imaging.

Hemesath ER, Schreiber DK, Kisielowski CF, Petford-Long AK, Lauhon LJ.

Small. 2012 Jun 11;8(11):1717-24. doi: 10.1002/smll.201102404. Epub 2012 Mar 22.

PMID:
22447661
10.

Photoluminescence properties of InAs nanowires grown on GaAs and Si substrates.

Sun MH, Leong ES, Chin AH, Ning CZ, Cirlin GE, Samsonenko YB, Dubrovskii VG, Chuang L, Chang-Hasnain C.

Nanotechnology. 2010 Aug 20;21(33):335705. doi: 10.1088/0957-4484/21/33/335705. Epub 2010 Jul 26.

PMID:
20657047
11.

Pressure-induced structural phase transformations in silicon nanowires.

Poswal HK, Garg N, Sharma SM, Busetto E, Sikka SK, Gundiah G, Deepak FL, Rao CN.

J Nanosci Nanotechnol. 2005 May;5(5):729-32.

PMID:
16010929
12.

Phase transition and compressibility in silicon nanowires.

Wang Y, Zhang J, Wu J, Coffer JL, Lin Z, Sinogeikin SV, Yang W, Zhao Y.

Nano Lett. 2008 Sep;8(9):2891-5. doi: 10.1021/nl8016576. Epub 2008 Aug 23.

PMID:
18720974
13.

Well-crystalline ZnO nanowire based field effect transistors (FETs).

Kim SH, Umar A, Hwang SW, Al-Sayari SA, Abaker M, Al-Hajry A.

J Nanosci Nanotechnol. 2011 Jun;11(6):5102-7.

PMID:
21770150
14.

Synthesis of beta-SiC/SiO2 core-sheath nanowires by CVD technique using Ni as catalyst.

Panda SK, Sengupta J, Jacob C.

J Nanosci Nanotechnol. 2010 May;10(5):3046-52.

PMID:
20358897
15.

Facile synthesis of highly uniform Mn/Co-codoped ZnO nanowires: optical, electrical, and magnetic properties.

Li H, Huang Y, Zhang Q, Qiao Y, Gu Y, Liu J, Zhang Y.

Nanoscale. 2011 Feb;3(2):654-60. doi: 10.1039/c0nr00644k. Epub 2010 Nov 26.

PMID:
21113544
16.

Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires.

Schäfer-Nolte EO, Stoica T, Gotschke T, Limbach FA, Sutter E, Sutter P, Grützmacher D, Calarco R.

Nanotechnology. 2010 Aug 6;21(31):315702. doi: 10.1088/0957-4484/21/31/315702. Epub 2010 Jul 15.

PMID:
20634570
17.

Stages in molecular beam epitaxy growth of GaAs nanowires studied by x-ray diffraction.

Mariager SO, Lauridsen SL, Sørensen CB, Dohn A, Willmott PR, Nygård J, Feidenhans'l R.

Nanotechnology. 2010 Mar 19;21(11):115603. doi: 10.1088/0957-4484/21/11/115603. Epub 2010 Feb 22.

PMID:
20173223
18.

Spontaneous growth and phase transformation of highly conductive nickel germanide nanowires.

Yan C, Higgins JM, Faber MS, Lee PS, Jin S.

ACS Nano. 2011 Jun 28;5(6):5006-14. doi: 10.1021/nn201108u. Epub 2011 May 9.

PMID:
21539374
19.

Two new colloidal crystal phases of lipid A-monophosphate: order-to-order transition in colloidal crystals.

Faunce CA, Paradies HH.

J Chem Phys. 2009 Dec 28;131(24):244708. doi: 10.1063/1.3272670.

PMID:
20059100
20.

Ex situ n and p doping of vertical epitaxial short silicon nanowires by ion implantation.

Kanungo PD, Kögler R, Nguyen-Duc K, Zakharov N, Werner P, Gösele U.

Nanotechnology. 2009 Apr 22;20(16):165706. doi: 10.1088/0957-4484/20/16/165706. Epub 2009 Apr 1.

PMID:
19420579

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