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Items: 1 to 20 of 131

1.

Strain-mediated phase control and electrolyte-gating of electron-doped manganites.

Xiang PH, Asanuma S, Yamada H, Inoue IH, Sato H, Akoh H, Sawa A, Ueno K, Yuan H, Shimotani H, Kawasaki M, Iwasa Y.

Adv Mater. 2011 Dec 22;23(48):5822-7. doi: 10.1002/adma.201102968. Epub 2011 Nov 22.

PMID:
22105844
2.

Metal--semiconductor transition in single-walled carbon nanotubes induced by low-energy electron irradiation.

Vijayaraghavan A, Kanzaki K, Suzuki S, Kobayashi Y, Inokawa H, Ono Y, Kar S, Ajayan PM.

Nano Lett. 2005 Aug;5(8):1575-9.

PMID:
16089491
3.

Morphological impact of zinc oxide layers on the device performance in thin-film transistors.

Faber H, Klaumünzer M, Voigt M, Galli D, Vieweg BF, Peukert W, Spiecker E, Halik M.

Nanoscale. 2011 Mar;3(3):897-9. doi: 10.1039/c0nr00800a. Epub 2010 Nov 29.

PMID:
21116548
4.

Polymer electrolyte gating of carbon nanotube network transistors.

Ozel T, Gaur A, Rogers JA, Shim M.

Nano Lett. 2005 May;5(5):905-11.

PMID:
15884892
5.

Ultrasonically driven nanomechanical single-electron shuttle.

Koenig DR, Weig EM, Kotthaus JP.

Nat Nanotechnol. 2008 Aug;3(8):482-5. doi: 10.1038/nnano.2008.178. Epub 2008 Jul 6.

PMID:
18685635
6.

Tunable nanoscale graphene magnetometers.

Pisana S, Braganca PM, Marinero EE, Gurney BA.

Nano Lett. 2010 Jan;10(1):341-6. doi: 10.1021/nl903690y.

PMID:
20030395
7.

High-performance flexible transparent thin-film transistors using a hybrid gate dielectric and an amorphous zinc indium tin oxide channel.

Liu J, Buchholz DB, Chang RP, Facchetti A, Marks TJ.

Adv Mater. 2010 Jun 4;22(21):2333-7. doi: 10.1002/adma.200903761. No abstract available.

PMID:
20491089
8.

Effect of grain boundaries on the local electronic transport in nanostructured films of colossal magnetoresistive manganites.

Kar S, Sarkar J, Ghosh B, Raychaudhuri AK.

J Nanosci Nanotechnol. 2007 Jun;7(6):2051-4.

PMID:
17654990
9.

Control of carrier density by self-assembled monolayers in organic field-effect transistors.

Kobayashi S, Nishikawa T, Takenobu T, Mori S, Shimoda T, Mitani T, Shimotani H, Yoshimoto N, Ogawa S, Iwasa Y.

Nat Mater. 2004 May;3(5):317-22. Epub 2004 Apr 4.

PMID:
15064756
10.

Delocalized and localized states of eg electrons in half-doped manganites.

Winkler EL, Tovar M, Causa MT.

J Phys Condens Matter. 2013 Jul 24;25(29):296003. doi: 10.1088/0953-8984/25/29/296003. Epub 2013 Jun 27.

PMID:
23807798
11.

Carbon nanotube thin film transistors based on aerosol methods.

Zavodchikova MY, Kulmala T, Nasibulin AG, Ermolov V, Franssila S, Grigoras K, Kauppinen EI.

Nanotechnology. 2009 Feb 25;20(8):085201. doi: 10.1088/0957-4484/20/8/085201. Epub 2009 Feb 2.

PMID:
19417441
12.

Sketched oxide single-electron transistor.

Cheng G, Siles PF, Bi F, Cen C, Bogorin DF, Bark CW, Folkman CM, Park JW, Eom CB, Medeiros-Ribeiro G, Levy J.

Nat Nanotechnol. 2011 Apr 17;6(6):343-7. doi: 10.1038/nnano.2011.56.

PMID:
21499252
13.

Electrochemical characterization of thin film electrodes toward developing a DNA transistor.

Harrer S, Ahmed S, Afzali-Ardakani A, Luan B, Waggoner PS, Shao X, Peng H, Goldfarb DL, Martyna GJ, Rossnagel SM, Deligianni L, Stolovitzky GA.

Langmuir. 2010 Dec 21;26(24):19191-8. doi: 10.1021/la102671g. Epub 2010 Nov 22.

PMID:
21090688
14.

A protein-based three terminal electronic device.

Rinaldi R, Maruccio G, Biasco A, Visconti P, Arima V, Cingolani R.

Ann N Y Acad Sci. 2003 Dec;1006:187-97.

PMID:
14976018
15.

CMOS-compatible fabrication of room-temperature single-electron devices.

Ray V, Subramanian R, Bhadrachalam P, Ma LC, Kim CU, Koh SJ.

Nat Nanotechnol. 2008 Oct;3(10):603-8. doi: 10.1038/nnano.2008.267. Epub 2008 Sep 14.

PMID:
18838999
16.

Soluble fullerene-based n-channel organic thin-film transistors printed by using a polydimethylsiloxane stamp.

Horii Y, Ikawa M, Chikamatsu M, Azumi R, Kitagawa M, Konishi H, Yase K.

ACS Appl Mater Interfaces. 2011 Mar;3(3):836-41. doi: 10.1021/am101193y. Epub 2011 Mar 2.

PMID:
21366238
17.
18.

Ionic-electronic conductor nanostructures: template-confined growth and nonlinear electrical transport.

Liang C, Terabe K, Hasegawa T, Negishi R, Tamura T, Aono M.

Small. 2005 Oct;1(10):971-5. No abstract available.

PMID:
17193380
19.

Induced crystallization of rubrene in thin-film transistors.

Li Z, Du J, Tang Q, Wang F, Xu JB, Yu JC, Miao Q.

Adv Mater. 2010 Aug 10;22(30):3242-6. doi: 10.1002/adma.201000786. No abstract available.

PMID:
20535740
20.

Spray-deposited Li-doped ZnO transistors with electron mobility exceeding 50 cm²/Vs.

Adamopoulos G, Bashir A, Thomas S, Gillin WP, Georgakopoulos S, Shkunov M, Baklar MA, Stingelin N, Maher RC, Cohen LF, Bradley DD, Anthopoulos TD.

Adv Mater. 2010 Nov 9;22(42):4764-9. doi: 10.1002/adma.201001444. No abstract available.

PMID:
20803536

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