Format
Sort by
Items per page

Send to

Choose Destination

Links from PubMed

Items: 1 to 20 of 223

1.

Remote plasma enhanced chemical deposition of non-crystalline GeO2 on Ge and Si substrates.

Lucovsky G, Zeller D.

J Nanosci Nanotechnol. 2011 Sep;11(9):7974-81.

PMID:
22097515
2.

[Comparative study on photoluminescence from Ge/PS and Ge/SiO2 thin films].

Sun XJ, Ma SY, Wei JJ, Xu XL.

Guang Pu Xue Yu Guang Pu Fen Xi. 2008 Sep;28(9):2033-7. Chinese.

PMID:
19093555
3.

Nanostructured multilayer TiO2-Ge films with quantum confinement effects for photovoltaic applications.

Khan AF, Mehmood M, Aslam M, Shah SI.

J Colloid Interface Sci. 2010 Mar 1;343(1):271-80. doi: 10.1016/j.jcis.2009.11.045. Epub 2009 Nov 26.

PMID:
20045525
4.

Reduced GeO2 Nanoparticles: Electronic Structure of a Nominal GeOx Complex and Its Stability under H2 Annealing.

Zhao J, Yang L, McLeod JA, Liu L.

Sci Rep. 2015 Dec 4;5:17779. doi: 10.1038/srep17779.

5.

Characteristics of Ge-Sb-Te films prepared by cyclic pulsed plasma-enhanced chemical vapor deposition.

Suk KS, Jung HN, Woo HG, Park DH, Kim DH.

J Nanosci Nanotechnol. 2010 May;10(5):3354-6.

PMID:
20358955
6.

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition.

Cao YQ, Wu B, Wu D, Li AD.

Nanoscale Res Lett. 2017 Dec;12(1):370. doi: 10.1186/s11671-017-2083-z. Epub 2017 May 25.

7.

Photoluminescence of silicon nanocrystals embedded in silicon oxide.

Wong CK, Wong H, Filip V.

J Nanosci Nanotechnol. 2009 Feb;9(2):1272-6.

PMID:
19441504
8.

The structural and optical properties of SiO2/Si rich SiNx multilayers containing Si-ncs.

Delachat F, Carrada M, Ferblantier G, Grob JJ, Slaoui A, Rinnert H.

Nanotechnology. 2009 Jul 8;20(27):275608. doi: 10.1088/0957-4484/20/27/275608. Epub 2009 Jun 17.

PMID:
19531864
9.

Development of Ge nanoparticles embedded in GeO2 matrix.

Batra Y, Kabiraj D, Kanjilal D.

J Nanosci Nanotechnol. 2008 Aug;8(8):4081-5.

PMID:
19049179
10.

Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition.

Bollani M, Chrastina D, Fedorov A, Sordan R, Picco A, Bonera E.

Nanotechnology. 2010 Nov 26;21(47):475302. doi: 10.1088/0957-4484/21/47/475302. Epub 2010 Oct 29.

PMID:
21030775
11.
12.

Plasmonic properties of Ag nanoparticles embedded in GeO2-SiO2 matrix by atom beam sputtering.

Mohapatra S.

Phys Chem Chem Phys. 2016 Feb 7;18(5):3878-83. doi: 10.1039/c5cp05345e.

PMID:
26766559
13.

Photosensitive GeO2-SiO2 films for ultraviolet laser writing of channel waveguides and bragg gratings with Cr-loaded waveguide structure.

Takahashi M, Sakoh A, Ichii K, Tokuda Y, Yoko T, Nishii J.

Appl Opt. 2003 Aug 1;42(22):4594-8.

PMID:
12916627
14.

Overlayer surface-enhanced Raman spectroscopy for studying the electrodeposition and interfacial chemistry of ultrathin ge on a nanostructured support.

Carim AI, Gu J, Maldonado S.

ACS Nano. 2011 Mar 22;5(3):1818-30. doi: 10.1021/nn102555u. Epub 2011 Feb 28.

PMID:
21355608
15.

Evolution of photoluminescence mechanisms of Si(+)-implanted SiO2 films with thermal annealing.

Ding L, Chen TP, Liu Y, Ng CY, Yang M, Wong JI, Zhu FR, Tan MC, Fung S, Chen XD, Huang Y.

J Nanosci Nanotechnol. 2008 Jul;8(7):3555-60.

PMID:
19051910
16.

O-vacancies in (i) nano-crystalline HfO2 and (i) non-crystalline SiO2 and Si3N4 studied by X-ray absorption spectroscopy.

Lucovsky G, Miotti L, Bastos KP.

J Nanosci Nanotechnol. 2012 Jun;12(6):4811-9.

PMID:
22905534
17.

Atomic and electronic structure of ultrathin fluoride barrier layers at the oxide/Si interface.

Pasquali L, Montecchi M, Nannarone S, Boscherini F.

J Phys Condens Matter. 2011 Sep 7;23(35):355003. doi: 10.1088/0953-8984/23/35/355003. Epub 2011 Jul 25.

PMID:
21785187
18.

[Photoluminescence from interface of SiO/SiO2 superlattices].

Wang SW, Yi LX, He Z, Hu F, Wang YS.

Guang Pu Xue Yu Guang Pu Fen Xi. 2009 May;29(5):1197-200. Chinese.

PMID:
19650452
19.

Remote plasma processing of sapphire substrates for deposition of TiN and TiO2.

Lucovsky G, Kim J.

J Nanosci Nanotechnol. 2011 Sep;11(9):7962-8.

PMID:
22097513
20.

X-ray absorption spectroscopy of GeO2 glass to 64 GPa.

Hong X, Newville M, Duffy TS, Sutton SR, Rivers ML.

J Phys Condens Matter. 2014 Jan 22;26(3):035104. doi: 10.1088/0953-8984/26/3/035104. Epub 2013 Nov 28.

PMID:
24285424

Supplemental Content

Support Center