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Items: 1 to 20 of 213

1.

Memory and threshold resistance switching in Ni/NiO core-shell nanowires.

He L, Liao ZM, Wu HC, Tian XX, Xu DS, Cross GL, Duesberg GS, Shvets IV, Yu DP.

Nano Lett. 2011 Nov 9;11(11):4601-6. doi: 10.1021/nl202017k.

PMID:
21985530
2.

CMOS compatible nanoscale nonvolatile resistance switching memory.

Jo SH, Lu W.

Nano Lett. 2008 Feb;8(2):392-7. doi: 10.1021/nl073225h.

PMID:
18217785
3.

Self-formed exchange bias of switchable conducting filaments in NiO resistive random access memory capacitors.

Son JY, Kim CH, Cho JH, Shin YH, Jang HM.

ACS Nano. 2010 Jun 22;4(6):3288-92. doi: 10.1021/nn100323x.

PMID:
20433193
4.

Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires.

Cagli C, Nardi F, Harteneck B, Tan Z, Zhang Y, Ielmini D.

Small. 2011 Oct 17;7(20):2899-905. doi: 10.1002/smll.201101157.

PMID:
21874659
5.

Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor.

Sohn JI, Choi SS, Morris SM, Bendall JS, Coles HJ, Hong WK, Jo G, Lee T, Welland ME.

Nano Lett. 2010 Nov 10;10(11):4316-20. doi: 10.1021/nl1013713.

PMID:
20945844
6.

Lognormal switching times for titanium dioxide bipolar memristors: origin and resolution.

Medeiros-Ribeiro G, Perner F, Carter R, Abdalla H, Pickett MD, Williams RS.

Nanotechnology. 2011 Mar 4;22(9):095702. doi: 10.1088/0957-4484/22/9/095702.

PMID:
21258143
7.

1-D simulation of a novel nonvolatile resistive random access memory device.

Meyer R, Kohlstedt H.

IEEE Trans Ultrason Ferroelectr Freq Control. 2006 Dec;53(12):2340-8.

PMID:
17186916
8.

Si/a-Si core/shell nanowires as nonvolatile crossbar switches.

Dong Y, Yu G, McAlpine MC, Lu W, Lieber CM.

Nano Lett. 2008 Feb;8(2):386-91. doi: 10.1021/nl073224p.

PMID:
18220442
9.

Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices.

Pickett MD, Williams RS.

Nanotechnology. 2012 Jun 1;23(21):215202. doi: 10.1088/0957-4484/23/21/215202.

PMID:
22551985
10.

A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications.

Kim KH, Gaba S, Wheeler D, Cruz-Albrecht JM, Hussain T, Srinivasa N, Lu W.

Nano Lett. 2012 Jan 11;12(1):389-95. doi: 10.1021/nl203687n.

PMID:
22141918
11.

Photo-stimulated resistive switching of ZnO nanorods.

Park J, Lee S, Yong K.

Nanotechnology. 2012 Sep 28;23(38):385707. doi: 10.1088/0957-4484/23/38/385707.

PMID:
22948083
12.

Effects of crystallization and non-lattice oxygen atoms on Cu(x)O-based resistive switching memory.

Lin CC, Wu PH, Chang YP.

J Nanosci Nanotechnol. 2013 Jan;13(1):483-6.

PMID:
23646758
13.

Resistance switching characteristics of HfO2 film with electrode for resistance change random access memory.

Park IS, Lee JH, Lee S, Ahn J.

J Nanosci Nanotechnol. 2007 Nov;7(11):4139-42.

PMID:
18047136
14.

Memristive switching mechanism for metal/oxide/metal nanodevices.

Yang JJ, Pickett MD, Li X, Ohlberg DA, Stewart DR, Williams RS.

Nat Nanotechnol. 2008 Jul;3(7):429-33. doi: 10.1038/nnano.2008.160.

PMID:
18654568
15.

Physical electro-thermal model of resistive switching in bi-layered resistance-change memory.

Kim S, Kim SJ, Kim KM, Lee SR, Chang M, Cho E, Kim YB, Kim CJ, Chung U-, Yoo IK.

Sci Rep. 2013;3:1680. doi: 10.1038/srep01680.

16.

Observation of nonvolatile resistive memory switching characteristics in Ag/graphene-oxide/Ag devices.

Venugopal G, Kim SJ.

J Nanosci Nanotechnol. 2012 Nov;12(11):8522-5.

PMID:
23421239
17.

Programmable resistance switching in nanoscale two-terminal devices.

Jo SH, Kim KH, Lu W.

Nano Lett. 2009 Jan;9(1):496-500. doi: 10.1021/nl803669s.

PMID:
19113891
18.

Electrically assisted magnetic recording in multiferroic nanostructures.

Zavaliche F, Zhao T, Zheng H, Straub F, Cruz MP, Yang PL, Hao D, Ramesh R.

Nano Lett. 2007 Jun;7(6):1586-90.

PMID:
17497818
19.

Nonvolatile resistive switching in single crystalline ZnO nanowires.

Yang Y, Zhang X, Gao M, Zeng F, Zhou W, Xie S, Pan F.

Nanoscale. 2011 Apr;3(4):1917-21. doi: 10.1039/c1nr10096c.

PMID:
21394361
20.

Generic relevance of counter charges for cation-based nanoscale resistive switching memories.

Tappertzhofen S, Valov I, Tsuruoka T, Hasegawa T, Waser R, Aono M.

ACS Nano. 2013 Jul 23;7(7):6396-402. doi: 10.1021/nn4026614.

PMID:
23786236
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