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Items: 1 to 20 of 156

1.

Ballistic electron emission spectroscopy on Ag/Si devices.

Bannani A, Bobisch CA, Matena M, Möller R.

Nanotechnology. 2008 Sep 17;19(37):375706. doi: 10.1088/0957-4484/19/37/375706. Epub 2008 Aug 5.

PMID:
21832560
2.

Imaging buried organic islands by spatially resolved ballistic electron emission spectroscopy.

Goh KE, Bannani A, Troadec C.

Nanotechnology. 2008 Nov 5;19(44):445718. doi: 10.1088/0957-4484/19/44/445718. Epub 2008 Oct 2.

PMID:
21832759
3.

Conservation of the lateral electron momentum at a metal-semiconductor interface studied by ballistic electron emission microscopy.

Bobisch CA, Bannani A, Koroteev YM, Bihlmayer G, Chulkov EV, Möller R.

Phys Rev Lett. 2009 Apr 3;102(13):136807. Epub 2009 Apr 1.

PMID:
19392390
4.

Direct measurements of lateral variations of Schottky barrier height across "end-on" metal contacts to vertical Si nanowires by ballistic electron emission microscopy.

Cai W, Che Y, Pelz JP, Hemesath ER, Lauhon LJ.

Nano Lett. 2012 Feb 8;12(2):694-8. doi: 10.1021/nl203568c. Epub 2012 Jan 11.

PMID:
22214531
5.

Epitaxial Fe3Si films on GaAs(100) substrates by means of electron beam evaporation.

Thomas J, Schumann J, Vinzelberg H, Arushanov E, Engelhard R, Schmidt OG, Gemming T.

Nanotechnology. 2009 Jun 10;20(23):235604. doi: 10.1088/0957-4484/20/23/235604. Epub 2009 May 19.

PMID:
19451681
6.

Electron transport at surfaces and interfaces.

Bobisch CA, Möller R.

Chimia (Aarau). 2012;66(1-2):23-30. doi: 10.2533/chimia.2012.23.

PMID:
22546187
7.

Electronic structure of CoSi(2) films on Si(111) studied using time-resolved two-photon photoemission.

Kutschera M, Groth T, Kentsch C, Shumay IL, Weinelt M, Fauster T.

J Phys Condens Matter. 2009 Apr 1;21(13):134006. doi: 10.1088/0953-8984/21/13/134006. Epub 2009 Mar 12.

PMID:
21817481
8.

Mechanisms and energetics of hydride dissociation reactions on surfaces of plasma-deposited silicon thin films.

Singh T, Valipa MS, Mountziaris TJ, Maroudas D.

J Chem Phys. 2007 Nov 21;127(19):194703.

PMID:
18035894
10.

Interface effects on the quantum well states of Pb thin films.

Pan S, Liu Q, Ming F, Wang K, Xiao X.

J Phys Condens Matter. 2011 Dec 7;23(48):485001. doi: 10.1088/0953-8984/23/48/485001. Epub 2011 Oct 28.

PMID:
22034437
11.

Chemical tuning of metal-semiconductor interfaces.

Ricci DA, Miller T, Chiang TC.

Phys Rev Lett. 2004 Sep 24;93(13):136801. Epub 2004 Sep 20.

PMID:
15524749
12.

X-ray studies of self-assembled organic monolayers grown on hydrogen-terminated Si(111).

Jin H, Kinser CR, Bertin PA, Kramer DE, Libera JA, Hersam MC, Nguyen ST, Bedzyk MJ.

Langmuir. 2004 Jul 20;20(15):6252-8.

PMID:
15248710
13.

Lead growth on Si(111) surfaces reconstructed by indium.

Vlachos D, Kamaratos M, Foulias SD, Binz S, Hupalo M, Tringides MC.

J Phys Condens Matter. 2012 Mar 7;24(9):095006. doi: 10.1088/0953-8984/24/9/095006. Epub 2012 Feb 3.

PMID:
22301708
14.

One-step Ge/Si epitaxial growth.

Wu HC, Lin BH, Chen HC, Chen PC, Sheu HS, Lin IN, Chiu HT, Lee CY.

ACS Appl Mater Interfaces. 2011 Jul;3(7):2398-401. doi: 10.1021/am200310c. Epub 2011 Jun 8.

PMID:
21650184
15.

Contrast between surface plasmon polariton-mediated extraordinary optical transmission behavior in epitaxial and polycrystalline Ag films in the mid- and far-infrared regimes.

Li BH, Sanders CE, McIlhargey J, Cheng F, Gu C, Zhang G, Wu K, Kim J, Mousavi SH, Khanikaev AB, Lu YJ, Gwo S, Shvets G, Shih CK, Qiu X.

Nano Lett. 2012 Dec 12;12(12):6187-91. doi: 10.1021/nl303029s. Epub 2012 Nov 8.

PMID:
23131144
16.

In-situ P doped epitaxial Si(1-x)C(x) growth under UHV-CVD.

Koo S, Yoot JH, Kim SW, Ko DH.

J Nanosci Nanotechnol. 2014 Oct;14(10):7641-7.

PMID:
25942841
18.

Electronically transparent graphene barriers against unwanted doping of silicon.

Wong CP, Koek TJ, Liu Y, Loh KP, Goh KE, Troadec C, Nijhuis CA.

ACS Appl Mater Interfaces. 2014 Nov 26;6(22):20464-72. doi: 10.1021/am506055h. Epub 2014 Nov 3.

PMID:
25329365
19.

Microstructure of Mo/Si multilayers with B4C diffusion barrier layers.

Nedelcu I, van de Kruijs RW, Yakshin AE, Bijkerk F.

Appl Opt. 2009 Jan 10;48(2):155-60.

PMID:
19137023
20.

Effects of porous silicon morphology on ballistic electron emission.

Yujuan Z, Xiaoning Z, Wenjiang W, Chunliang L.

J Nanosci Nanotechnol. 2012 Aug;12(8):6548-51.

PMID:
22962783

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