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Items: 1 to 20 of 78

1.

Photodetectors based on intersubband transitions using III-nitride superlattice structures.

Hofstetter D, Baumann E, Giorgetta FR, Théron R, Wu H, Schaff WJ, Dawlaty J, George PA, Eastman LF, Rana F, Kandaswamy PK, Leconte S, Monroy E.

J Phys Condens Matter. 2009 Apr 29;21(17):174208. doi: 10.1088/0953-8984/21/17/174208.

PMID:
21825412
2.

Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN quantum wells.

Li Y, Bhattacharyya A, Thomidis C, Moustakas TD, Paiella R.

Opt Express. 2007 Apr 30;15(9):5860-5.

PMID:
19532844
3.

Fabrication and performance characteristics of high-speed ion-implanted Si metal-semiconductor-metal photodetectors.

Dutta NK, Nichols DT, Jacobson DC, Livescu G.

Appl Opt. 1997 Feb 20;36(6):1180-4.

PMID:
18250788
4.

Passively mode-locked Tm,Ho:YAG laser at 2 microm based on saturable absorption of intersubband transitions in quantum wells.

Yang K, Bromberger H, Ruf H, Schäfer H, Neuhaus J, Dekorsy T, Grimm CV, Helm M, Biermann K, Künzel H.

Opt Express. 2010 Mar 29;18(7):6537-44. doi: 10.1364/OE.18.006537.

PMID:
20389677
5.

Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors.

Chen J, Xu Q, Zhou Y, Jin J, Lin C, He L.

Nanoscale Res Lett. 2011 Dec 22;6(1):635. doi: 10.1186/1556-276X-6-635.

6.

Resonant metamaterial detectors based on THz quantum-cascade structures.

Benz A, Krall M, Schwarz S, Dietze D, Detz H, Andrews AM, Schrenk W, Strasser G, Unterrainer K.

Sci Rep. 2014 Mar 10;4:4269. doi: 10.1038/srep04269.

7.

Polarity determination by electron energy-loss spectroscopy: application to ultra-small III-nitride semiconductor nanocolumns.

Kong X, Ristić J, Sanchez-Garcia MA, Calleja E, Trampert A.

Nanotechnology. 2011 Oct 14;22(41):415701. doi: 10.1088/0957-4484/22/41/415701.

PMID:
21914935
8.

High performance, waveguide integrated Ge photodetectors.

Ahn D, Hong CY, Liu J, Giziewicz W, Beals M, Kimerling LC, Michel J, Chen J, Kärtner FX.

Opt Express. 2007 Apr 2;15(7):3916-21.

PMID:
19532633
9.

Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells.

Rong X, Wang XQ, Chen G, Zheng XT, Wang P, Xu FJ, Qin ZX, Tang N, Chen YH, Sang LW, Sumiya M, Ge WK, Shen B.

Sci Rep. 2015 Sep 23;5:14386. doi: 10.1038/srep14386.

10.

Hyperentanglement source by intersubband two-photon emission from semiconductor quantum wells.

Hayat A, Ginzburg P, Neiman D, Rosenblum S, Orenstein M.

Opt Lett. 2008 Jun 1;33(11):1168-70.

PMID:
18516162
11.

Electronic band structures and optical properties of type-II superlattice photodetectors with interfacial effect.

Qiao PF, Mou S, Chuang SL.

Opt Express. 2012 Jan 30;20(3):2319-34. doi: 10.1364/OE.20.002319.

PMID:
22330471
12.

Metamorphic In(0.20)Ga(0.80)As p-i-n photodetectors grown on GaAs substrates for near infrared applications.

Swaminathan K, Yang LM, Grassman TJ, Tabares G, Guzman A, Hierro A, Mills MJ, Ringel SA.

Opt Express. 2011 Apr 11;19(8):7280-8. doi: 10.1364/OE.19.007280.

PMID:
21503039
13.

Conduction intersubband transitions at normal incidence in Si(1-x)Ge(x) quantum well devices.

Virgilio M, Grosso G.

Nanotechnology. 2007 Feb 21;18(7):075402. doi: 10.1088/0957-4484/18/7/075402.

PMID:
21730501
14.

Ultraviolet photodetector based on GaN/AlN quantum disks in a single nanowire.

Rigutti L, Tchernycheva M, De Luna Bugallo A, Jacopin G, Julien FH, Zagonel LF, March K, Stephan O, Kociak M, Songmuang R.

Nano Lett. 2010 Aug 11;10(8):2939-43. doi: 10.1021/nl1010977. Erratum in: Nano Lett. 2010 Oct 13;10(10):4284.

PMID:
20617803
15.

Broadband terahertz ultrasonic transducer based on a laser-driven piezoelectric semiconductor superlattice.

Maznev AA, Manke KJ, Lin KH, Nelson KA, Sun CK, Chyi JI.

Ultrasonics. 2012 Jan;52(1):1-4. doi: 10.1016/j.ultras.2011.07.007.

PMID:
21872899
16.

Hole intersubband transitions in the p-type Hg1-xZnxTe/CdTe semiconductor superlattice.

Choi JB, Bickham SR.

Phys Rev B Condens Matter. 1992 Sep 15;46(12):7938-7940. No abstract available.

PMID:
10002543
17.

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.

Taniyasu Y, Kasu M, Makimoto T.

Nature. 2006 May 18;441(7091):325-8.

PMID:
16710416
18.

Ultra-broadband semiconductor laser.

Gmachl C, Sivco DL, Colombelli R, Capasso F, Cho AY.

Nature. 2002 Feb 21;415(6874):883-7.

PMID:
11859362
19.

Infrared laser induced lateral photovoltaic effect observed in Cu(2)O nanoscale film.

Du L, Wang H.

Opt Express. 2010 Apr 26;18(9):9113-8. doi: 10.1364/OE.18.009113.

PMID:
20588759
20.

High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide.

Vivien L, Rouvière M, Fédéli JM, Marris-Morini D, Damlencourt JF, Mangeney J, Crozat P, El Melhaoui L, Cassan E, Le Roux X, Pascal D, Laval S.

Opt Express. 2007 Jul 23;15(15):9843-8.

PMID:
19547334
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