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Items: 1 to 20 of 157

1.

Growth of one-dimensional Si/SiGe heterostructures by thermal CVD.

Mouchet C, Latu-Romain L, Cayron C, Rouviere E, Celle C, Simonato JP.

Nanotechnology. 2008 Aug 20;19(33):335603. doi: 10.1088/0957-4484/19/33/335603. Epub 2008 Jul 7.

PMID:
21730625
3.

X-ray and electron microscopy of actinide materials.

Moore KT.

Micron. 2010 Jun;41(4):336-58. doi: 10.1016/j.micron.2009.12.006. Epub 2009 Dec 30.

PMID:
20071187
4.

Lateral Ge Diffusion During Oxidation of Si/SiGe Fins.

Brewer WM, Xin Y, Hatem C, Diercks D, Truong VQ, Jones KS.

Nano Lett. 2017 Apr 12;17(4):2159-2164. doi: 10.1021/acs.nanolett.6b04407. Epub 2017 Mar 3.

PMID:
28249115
6.

Synthesis and microstructure of Cd4SiS6/Si composite nanowires.

Zhan J, Bando Y, Hu J, Golberg D.

J Electron Microsc (Tokyo). 2005 Dec;54(6):485-91. Epub 2006 Mar 23.

PMID:
16556623
7.

Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy.

Pantzas K, Patriarche G, Troadec D, Gautier S, Moudakir T, Suresh S, Largeau L, Mauguin O, Voss PL, Ougazzaden A.

Nanotechnology. 2012 Nov 16;23(45):455707. doi: 10.1088/0957-4484/23/45/455707. Epub 2012 Oct 22.

PMID:
23089619
8.
9.

High-angle annular dark-field imaging on a TEM/STEM system.

Otten MT.

J Electron Microsc Tech. 1991 Feb;17(2):221-30.

PMID:
2013823
10.

Lattice imaging in low-angle and high-angle bright-field scanning transmission electron microscopy.

Watanabe K, Kikuchi Y, Yamazaki T, Asano E, Nakanishi N, Kotaka Y, Okunishi E, Hashimoto I.

Acta Crystallogr A. 2004 Nov;60(Pt 6):591-7. Epub 2004 Oct 26.

PMID:
15507742
11.

The effect of substrate type on SiC nanowire orientation.

Attolini G, Rossi F, Bosi M, Watts BE, Salviati G.

J Nanosci Nanotechnol. 2011 May;11(5):4109-13.

PMID:
21780413
12.

Stranski-Krastanow growth of germanium on silicon nanowires.

Pan L, Lew KK, Redwing JM, Dickey EC.

Nano Lett. 2005 Jun;5(6):1081-5.

PMID:
15943447
13.

Inelastic electron scattering observation using energy filtered transmission electron microscopy for silicon -- germanium nanostructures imaging.

Pantel R, Jullian S, Delille D, Dutartre D, Chantre A, Kermarrec O, Campidelli Y, Kwakman LF.

Micron. 2003;34(3-5):239-47.

PMID:
12895496
14.

Recent advances in electron tomography: TEM and HAADF-STEM tomography for materials science and semiconductor applications.

Kübel C, Voigt A, Schoenmakers R, Otten M, Su D, Lee TC, Carlsson A, Bradley J.

Microsc Microanal. 2005 Oct;11(5):378-400.

PMID:
17481320
15.

The impact of erbium incorporation on the structure and photophysics of silicon-germanium nanowires.

Wu J, Wieligor M, Zerda TW, Coffer JL.

Nanoscale. 2010 Dec;2(12):2657-67. doi: 10.1039/c0nr00476f. Epub 2010 Oct 8.

PMID:
20931125
16.

Rational design of Ag/TiO2 nanosystems by a combined RF-sputtering/sol-gel approach.

Armelao L, Barreca D, Bottaro G, Gasparotto A, Maccato C, Tondello E, Lebedev OI, Turner S, Van Tendeloo G, Sada C, Stangar UL.

Chemphyschem. 2009 Dec 21;10(18):3249-59. doi: 10.1002/cphc.200900571.

PMID:
19882618
17.

Strain-driven morphology of Si1-xGex islands grown on Si(100)

Pinto N, Murri R, Rinaldi R, Barucca G.

Micron. 2000 Jun;31(3):315-21.

PMID:
10702982
18.

Microscopic and spectroscopic characterization of Hg(II) immobilization by mackinawite (FeS).

Jeong HY, Sun K, Hayes KF.

Environ Sci Technol. 2010 Oct 1;44(19):7476-83. doi: 10.1021/es100808y.

PMID:
20825179
19.

Probing structures of nanomaterials using advanced electron microscopy methods, including aberration-corrected electron microscopy at the Angstrom scale.

Gai PL, Yoshida K, Shute C, Jia X, Walsh M, Ward M, Dresselhaus MS, Weertman JR, Boyes ED.

Microsc Res Tech. 2011 Jul;74(7):664-70. doi: 10.1002/jemt.20933. Epub 2010 Oct 15.

PMID:
20954265
20.

Vapor-liquid-solid synthesis and characterization of alpha-monoclinic selenium nanowires.

Farfán W, Mosquera E, Vadapoo R, Krishnan S, Marín C.

J Nanosci Nanotechnol. 2009 Aug;9(8):4846-50.

PMID:
19928160

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