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Items: 1 to 20 of 167

1.

Effect of the growth rate on the morphology and structural properties of hut-shaped Ge islands in Si(001).

Yakimov AI, Nikiforov AI, Dvurechenskii AV, Ulyanov VV, Volodin VA, Groetzschel R.

Nanotechnology. 2006 Sep 28;17(18):4743-7. doi: 10.1088/0957-4484/17/18/036. Epub 2006 Sep 1.

PMID:
21727607
2.

Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition.

Bollani M, Chrastina D, Fedorov A, Sordan R, Picco A, Bonera E.

Nanotechnology. 2010 Nov 26;21(47):475302. doi: 10.1088/0957-4484/21/47/475302. Epub 2010 Oct 29.

PMID:
21030775
3.

Shape and size distribution of molecular beam epitaxy grown self-assembled Ge islands on Si (001) substrates.

Singha RK, Das S, Das K, Majumdar S, Dhar A, Ray SK.

J Nanosci Nanotechnol. 2008 Aug;8(8):4101-5.

PMID:
19049183
4.

Effects of pulsed laser radiation on epitaxial self-assembled Ge quantum dots grown on Si substrates.

del Pino AP, György E, Marcus IC, Roqueta J, Alonso MI.

Nanotechnology. 2011 Jul 22;22(29):295304. doi: 10.1088/0957-4484/22/29/295304. Epub 2011 Jun 17.

PMID:
21680960
5.

Ge quantum dots structural peculiarities depending on the preparation conditions.

Erenburg S, Bausk N, Mazalov L, Nikiforov A, Yakimov A.

J Synchrotron Radiat. 2003 Sep 1;10(Pt 5):380-3. Epub 2003 Aug 28.

PMID:
12944626
6.

Strain-driven morphology of Si1-xGex islands grown on Si(100)

Pinto N, Murri R, Rinaldi R, Barucca G.

Micron. 2000 Jun;31(3):315-21.

PMID:
10702982
7.

Synthesis and fundamental studies of (H3Ge)xSiH4-x molecules: precursors to semiconductor hetero- and nanostructures on Si.

Ritter CJ, Hu C, Chizmeshya AV, Tolle J, Klewer D, Tsong IS, Kouvetakis J.

J Am Chem Soc. 2005 Jul 13;127(27):9855-64.

PMID:
15998091
8.

Microphotoluminescence and perfect ordering of SiGe islands on pit-patterned Si(001) substrates.

Hackl F, Grydlik M, Brehm M, Groiss H, Schäffler F, Fromherz T, Bauer G.

Nanotechnology. 2011 Apr 22;22(16):165302. doi: 10.1088/0957-4484/22/16/165302. Epub 2011 Mar 11.

PMID:
21393825
9.

Stacked Ge nanocrystals with ultrathin SiO₂ separation layers.

Zschintzsch M, von Borany J, Jeutter NM, Mücklich A.

Nanotechnology. 2011 Nov 18;22(46):465302. doi: 10.1088/0957-4484/22/46/465302. Epub 2011 Oct 27.

PMID:
22032974
10.

Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots.

Talochkin AB, Cherkov AG.

Nanotechnology. 2009 Aug 26;20(34):345702. doi: 10.1088/0957-4484/20/34/345702. Epub 2009 Aug 4.

PMID:
19652280
11.

DC heating induced shape transformation of Ge structures on ultraclean Si(5 5 12) surfaces.

Dash JK, Rath A, Juluri RR, Raman PS, Müller K, Rosenauer A, Satyam PV.

J Phys Condens Matter. 2011 Apr 6;23(13):135002. doi: 10.1088/0953-8984/23/13/135002. Epub 2011 Mar 14.

PMID:
21403241
12.

Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy.

Mashanov V, Ulyanov V, Timofeev V, Nikiforov A, Pchelyakov O, Yu IS, Cheng H.

Nanoscale Res Lett. 2011 Jan 12;6(1):85. doi: 10.1186/1556-276X-6-85.

13.

Epitaxial Mn(5)Ge(3) nano-islands on a Ge(001) surface.

Kim H, Jung GE, Lim JH, Chung KH, Kahng SJ, Son WJ, Han S.

Nanotechnology. 2008 Jan 16;19(2):025707. doi: 10.1088/0957-4484/19/02/025707. Epub 2007 Dec 6.

PMID:
21817556
14.

Synthesis of butane-like SiGe hydrides: enabling precursors for CVD of Ge-rich semiconductors.

Chizmeshya AV, Ritter CJ, Hu C, Tice JB, Tolle J, Nieman RA, Tsong IS, Kouvetakis J.

J Am Chem Soc. 2006 May 31;128(21):6919-30.

PMID:
16719472
15.

Room-temperature growth of Mg on Si(111): stepwise versus continuous deposition.

Lee D, Lee G, Kim S, Hwang C, Koo JY, Lee H.

J Phys Condens Matter. 2007 Jul 4;19(26):266004. doi: 10.1088/0953-8984/19/26/266004. Epub 2007 May 31.

PMID:
21694073
16.

Observation and nucleation control of Ge nanoislands on Si(111) surfaces using scanning reflection electron microscopy

Shibata M, Shklyaev AA, Ichikawa M.

J Electron Microsc (Tokyo). 2000;49(2):217-23.

PMID:
11108044
17.

[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).

Liao XZ, Zou J, Cockayne DJ, Matsumura S.

Ultramicroscopy. 2004 Jan;98(2-4):239-47.

PMID:
15046804
18.
19.

Si/Ge intermixing during Ge Stranski-Krastanov growth.

Portavoce A, Hoummada K, Ronda A, Mangelinck D, Berbezier I.

Beilstein J Nanotechnol. 2014 Dec 9;5:2374-82. doi: 10.3762/bjnano.5.246. eCollection 2014.

20.

Composition and strain measurements of Ge(Si)/Si(001) islands by HRTEM.

Lin JH, Wu YQ, Tang S, Fan YL, Yang XJ, Jiang ZM, Zou J.

J Nanosci Nanotechnol. 2009 Apr;9(4):2753-7.

PMID:
19438031

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