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Items: 1 to 20 of 112

1.

Determination of the strain generated in InAs/InP quantum wires: prediction of nucleation sites.

Molina SI, Ben T, Sales DL, Pizarro J, Galindo PL, Varela M, Pennycook SJ, Fuster D, González Y, González L.

Nanotechnology. 2006 Nov 28;17(22):5652-8. doi: 10.1088/0957-4484/17/22/020. Epub 2006 Oct 30.

PMID:
21727338
2.

A method to determine the strain and nucleation sites of stacked nano-objects.

Molina SI, Varela M, Ben T, Sales DL, Pizarro J, Galindo PL, Fuster D, González Y, González L, Pennycook SJ.

J Nanosci Nanotechnol. 2008 Jul;8(7):3422-6.

PMID:
19051889
3.

Morphological evolution of InAs/InP quantum wires through aberration-corrected scanning transmission electron microscopy.

Sales DL, Varela M, Pennycook SJ, Galindo PL, González L, González Y, Fuster D, Molina SI.

Nanotechnology. 2010 Aug 13;21(32):325706. doi: 10.1088/0957-4484/21/32/325706. Epub 2010 Jul 21.

PMID:
20647625
4.

Isolated self-assembled InAs/InP(001) quantum wires obtained by controlling the growth front evolution.

Fuster D, Alén B, González L, González Y, Martínez-Pastor J, González MU, García JM.

Nanotechnology. 2007 Jan 24;18(3):035604. doi: 10.1088/0957-4484/18/3/035604. Epub 2007 Jan 3.

PMID:
19636127
5.

Column-by-column compositional mapping by Z-contrast imaging.

Molina SI, Sales DL, Galindo PL, Fuster D, González Y, Alén B, González L, Varela M, Pennycook SJ.

Ultramicroscopy. 2009 Jan;109(2):172-6. doi: 10.1016/j.ultramic.2008.10.008. Epub 2008 Oct 31.

PMID:
19062188
6.

Glancing-angle diffraction anomalous fine structure of InAs quantum dots and quantum wires.

Grenier S, Proietti MG, Renevier H, Gonzalez L, García JM, Gérard JM, García J.

J Synchrotron Radiat. 2001 Mar 1;8(Pt 2):536-8.

PMID:
11512842
7.

Self-assembling processes involved in the molecular beam epitaxy growth of stacked InAs/InP quantum wires.

Ulloa JM, Koenraad PM, Fuster D, González L, González Y, González MU.

Nanotechnology. 2008 Nov 5;19(44):445601. doi: 10.1088/0957-4484/19/44/445601. Epub 2008 Sep 29.

PMID:
21832733
8.

Designing spatial correlation of quantum dots: towards self-assembled three-dimensional structures.

Bortoleto JR, Zelcovit JG, Gutiérrez HR, Bettini J, Cotta MA.

Nanotechnology. 2008 Jan 9;19(1):015601. doi: 10.1088/0957-4484/19/01/015601. Epub 2007 Nov 29.

PMID:
21730536
9.

Mechanisms of molecular beam epitaxy growth in InAs/InP nanowire heterostructures.

Haapamaki CM, Lapierre RR.

Nanotechnology. 2011 Aug 19;22(33):335602. doi: 10.1088/0957-4484/22/33/335602. Epub 2011 Jul 25.

PMID:
21788682
10.

Quantum-confinement effects in InAs-InP core-shell nanowires.

Zanolli Z, Pistol ME, Fröberg LE, Samuelson L.

J Phys Condens Matter. 2007 Jul 25;19(29):295219. doi: 10.1088/0953-8984/19/29/295219. Epub 2007 Jun 11.

PMID:
21483071
11.

Shape and size control of InAs/InP (113)B quantum dots by Sb deposition during the capping procedure.

Lu W, Bozkurt M, Keizer JG, Rohel T, Folliot H, Bertru N, Koenraad PM.

Nanotechnology. 2011 Feb 4;22(5):055703. doi: 10.1088/0957-4484/22/5/055703. Epub 2010 Dec 22.

PMID:
21178229
12.

Growth and characterization of InP ringlike quantum-dot molecules grown by solid-source molecular beam epitaxy.

Jevasuwan W, Boonpeng P, Panyakeow S, Ratanathammaphan S.

J Nanosci Nanotechnol. 2010 Nov;10(11):7291-4.

PMID:
21137917
13.

First-step nucleation growth dependence of InAs/InGaAs/InP quantum dot formation in two-step growth.

Yin Z, Tang X, Zhang J, Deny S, Teng J, Du A, Chin MK.

Nanotechnology. 2008 Feb 27;19(8):085603. doi: 10.1088/0957-4484/19/8/085603. Epub 2008 Feb 1.

PMID:
21730727
14.

Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments.

Schukfeh MI, Storm K, Hansen A, Thelander C, Hinze P, Beyer A, Weimann T, Samuelson L, Tornow M.

Nanotechnology. 2014 Nov 21;25(46):465306. doi: 10.1088/0957-4484/25/46/465306. Epub 2014 Oct 31.

PMID:
25360747
15.

Self-assembled growth of GaAs anti quantum dots in InAs matrix by migration enhanced molecular beam epitaxy.

Lee EH, Song JD, Kim SY, Han IK, Chang SK, Lee JI.

J Nanosci Nanotechnol. 2012 Feb;12(2):1480-2.

PMID:
22629983
16.

The growth of a low defect InAs HEMT structure on Si by using an AlGaSb buffer layer containing InSb quantum dots for dislocation termination.

Ko KM, Seo JH, Kim DE, Lee ST, Noh YK, Kim MD, Oh JE.

Nanotechnology. 2009 Jun 3;20(22):225201. doi: 10.1088/0957-4484/20/22/225201. Epub 2009 May 12.

PMID:
19433876
17.

Nucleation sequence of InAs quantum dots on cross-hatch patterns.

Kanjanachuchai S, Limwongse T.

J Nanosci Nanotechnol. 2011 Dec;11(12):10787-91.

PMID:
22408996
18.

[Photoluminescence investigation of InAs bimodal self-assembled quantum dots state filling].

Jia GZ, Yao JH, Zhang CL, Shu Q, Liu RB, Ye XL, Wang ZG.

Guang Pu Xue Yu Guang Pu Fen Xi. 2007 Nov;27(11):2178-81. Chinese.

PMID:
18260388
19.

The determination of the size and shape of buried InAs/InP quantum dots by transmission electron microscopy.

Robertson MD, Bennett JC, Webb AM, Corbett JM, Raymond S, Poole PJ.

Ultramicroscopy. 2005 Jun;103(3):205-19. Epub 2005 Feb 4.

PMID:
15850708
20.

Effect of rapid thermal annealing on the electrical properties of GaAs Schottky diodes embedded with self-assembled InAs quantum dots.

Colleaux F, Lee J, Yu BY, Han I, Choi W, Song JD, Ghibaudo G.

J Nanosci Nanotechnol. 2008 Oct;8(10):5558-60.

PMID:
19198498

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