Similar articles for PMID: 21711945

Year	Number of Results
2000	3
2001	1
2002	1
2004	3
2005	1
2006	1
2007	2
2009	2
2010	3
2011	9
2012	4
2013	10
2014	6
2015	13
2016	8
2017	9
2018	8
2019	11
2020	11
2021	6
2022	2
2023	2
2024	0

1

Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE.

Shih CH, Huang TH, Schuber R, Chen YL, Chang L, Lo I, Chou MM, Schaadt DM. Shih CH, et al. Nanoscale Res Lett. 2011 Jun 15;6(1):425. doi: 10.1186/1556-276X-6-425. Nanoscale Res Lett. 2011. PMID: 21711945 Free PMC article.

2

Defect structure in heteroepitaxial semipolar (1122) (Ga, Al)N.

Arroyo Rojas Dasilva Y, Chauvat MP, Ruterana P, Lahourcade L, Monroy E, Nataf G. Arroyo Rojas Dasilva Y, et al. J Phys Condens Matter. 2010 Sep 8;22(35):355802. doi: 10.1088/0953-8984/22/35/355802. Epub 2010 Aug 11. J Phys Condens Matter. 2010. PMID: 21403298

3

Structure investigations of nonpolar GaN layers.

Neumann W, Mogilatenko A, Wernicke T, Richter E, Weyers M, Kneissl M. Neumann W, et al. J Microsc. 2010 Mar;237(3):308-13. doi: 10.1111/j.1365-2818.2009.03249.x. J Microsc. 2010. PMID: 20500386

4

Ion Beam Assisted Deposition of Thin Epitaxial GaN Films.

Rauschenbach B, Lotnyk A, Neumann L, Poppitz D, Gerlach JW. Rauschenbach B, et al. Materials (Basel). 2017 Jun 23;10(7):690. doi: 10.3390/ma10070690. Materials (Basel). 2017. PMID: 28773052 Free PMC article.

5

Polarity control of GaN epitaxial films grown on LiGaO₂(001) substrates and its mechanism.

Zheng Y, Wang W, Li X, Li Y, Huang L, Li G. Zheng Y, et al. Phys Chem Chem Phys. 2017 Aug 16;19(32):21467-21473. doi: 10.1039/c7cp03812g. Phys Chem Chem Phys. 2017. PMID: 28759081

6

Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE.

Krishna S, Aggarwal N, Mishra M, Maurya KK, Singh S, Dilawar N, Nagarajan S, Gupta G. Krishna S, et al. Phys Chem Chem Phys. 2016 Mar 21;18(11):8005-14. doi: 10.1039/c6cp00484a. Phys Chem Chem Phys. 2016. PMID: 26916430

7

Effect of screw threading dislocations and inverse domain boundaries in GaN on the shape of reciprocal-space maps.

Barchuk M, Motylenko M, Lukin G, Pätzold O, Rafaja D. Barchuk M, et al. J Appl Crystallogr. 2017 Mar 22;50(Pt 2):555-560. doi: 10.1107/S1600576717003612. eCollection 2017 Apr 1. J Appl Crystallogr. 2017. PMID: 28381980 Free PMC article.

8

An aberration-corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE.

Poppitz D, Lotnyk A, Gerlach JW, Lenzner J, Grundmann M, Rauschenbach B. Poppitz D, et al. Micron. 2015 Jun;73:1-8. doi: 10.1016/j.micron.2015.03.006. Epub 2015 Mar 23. Micron. 2015. PMID: 25846303

9

Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.

Zhao G, Wang L, Yang S, Li H, Wei H, Han D, Wang Z. Zhao G, et al. Sci Rep. 2016 Feb 10;6:20787. doi: 10.1038/srep20787. Sci Rep. 2016. PMID: 26861595 Free PMC article.

10

Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching.

Son JS, Honda Y, Amano H. Son JS, et al. Opt Express. 2014 Feb 10;22(3):3585-92. doi: 10.1364/OE.22.003585. Opt Express. 2014. PMID: 24663649 Free article.

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