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Items: 1 to 20 of 125

1.

Nanoscale footprints of self-running gallium droplets on GaAs surface.

Wu J, Wang ZM, Li AZ, Benamara M, Li S, Salamo GJ.

PLoS One. 2011;6(6):e20765. doi: 10.1371/journal.pone.0020765. Epub 2011 Jun 6.

2.

On the secondary droplets of self-running gallium droplets on GaAs surface.

Wu J, Wang ZM, Li AZ, Benamara M, Salamo GJ.

ACS Appl Mater Interfaces. 2011 Jun;3(6):1817-20. doi: 10.1021/am200538x. Epub 2011 May 19.

PMID:
21595449
3.

Self-running Ga droplets on GaAs (111)A and (111)B surfaces.

Kanjanachuchai S, Euaruksakul C.

ACS Appl Mater Interfaces. 2013 Aug 28;5(16):7709-13. doi: 10.1021/am402455u. Epub 2013 Aug 16.

PMID:
23942460
4.

Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by Droplet Epitaxy.

Tung KH, Huang J, Danner A.

J Nanosci Nanotechnol. 2016 Jun;16(6):6465-9.

PMID:
27427737
5.

Synthesis and patterning of gold nanostructures on InP and GaAs via galvanic displacement.

Hormozi Nezhad MR, Aizawa M, Porter LA Jr, Ribbe AE, Buriak JM.

Small. 2005 Nov;1(11):1076-81. No abstract available.

PMID:
17193399
6.

Ordering of the nanoscale step morphology as a mechanism for droplet self-propulsion.

Hilner E, Zakharov AA, Schulte K, Kratzer P, Andersen JN, Lundgren E, Mikkelsen A.

Nano Lett. 2009 Jul;9(7):2710-4. doi: 10.1021/nl9011886.

PMID:
19507835
7.

Stacking-faults-free zinc Blende GaAs nanowires.

Shtrikman H, Popovitz-Biro R, Kretinin A, Heiblum M.

Nano Lett. 2009 Jan;9(1):215-9. doi: 10.1021/nl8027872.

PMID:
19093840
8.

Self-replicating twins in nanowires.

Yuan Z, Nakano A.

Nano Lett. 2013 Oct 9;13(10):4925-30. doi: 10.1021/nl402881v. Epub 2013 Oct 1.

PMID:
24073636
9.

Size and density control of In droplets at near room temperatures.

Lee JH, Wang ZhM, Kim NY, Salamo GJ.

Nanotechnology. 2009 Jul 15;20(28):285602. doi: 10.1088/0957-4484/20/28/285602. Epub 2009 Jun 24.

PMID:
19550019
10.

Morphology- and orientation-controlled gallium arsenide nanowires on silicon substrates.

Ihn SG, Song JI, Kim TW, Leem DS, Lee T, Lee SG, Koh EK, Song K.

Nano Lett. 2007 Jan;7(1):39-44.

PMID:
17212437
11.

Wurtzite GaAs/AlGaAs core-shell nanowires grown by molecular beam epitaxy.

Zhou HL, Hoang TB, Dheeraj DL, van Helvoort AT, Liu L, Harmand JC, Fimland BO, Weman H.

Nanotechnology. 2009 Oct 14;20(41):415701. doi: 10.1088/0957-4484/20/41/415701. Epub 2009 Sep 16.

PMID:
19755725
12.

Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber.

Tsukamoto S, Honma T, Bell GR, Ishii A, Arakawa Y.

Small. 2006 Mar;2(3):386-9. No abstract available. Erratum in: Small. 2006 May;2(5):587.

PMID:
17193056
13.

P-doping mechanisms in catalyst-free gallium arsenide nanowires.

Dufouleur J, Colombo C, Garma T, Ketterer B, Uccelli E, Nicotra M, Fontcuberta i Morral A.

Nano Lett. 2010 May 12;10(5):1734-40. doi: 10.1021/nl100157w.

PMID:
20373777
14.

Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer.

Ahmad I, Avrutin V, Morkoç H, Moore JC, Baski AA.

J Nanosci Nanotechnol. 2007 Aug;7(8):2889-93.

PMID:
17685312
15.

Direct imaging of the atomic structure inside a nanowire by scanning tunnelling microscopy.

Mikkelsen A, Sköld N, Ouattara L, Borgström M, Andersen JN, Samuelson L, Seifert W, Lundgren E.

Nat Mater. 2004 Aug;3(8):519-23. Epub 2004 Jul 4.

PMID:
15235596
16.

All zinc-blende GaAs/(Ga,Mn)As core-shell nanowires with ferromagnetic ordering.

Yu X, Wang H, Pan D, Zhao J, Misuraca J, von Molnár S, Xiong P.

Nano Lett. 2013 Apr 10;13(4):1572-7. doi: 10.1021/nl304740k. Epub 2013 Mar 26.

PMID:
23517546
17.

Coherent emission from ultrathin-walled spiral InGaAs/GaAs quantum dot microtubes.

Li F, Mi Z, Vicknesh S.

Opt Lett. 2009 Oct 1;34(19):2915-7. doi: 10.1364/OL.34.002915.

PMID:
19794766
18.

Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography.

Verheijen MA, Algra RE, Borgström MT, Immink G, Sourty E, Enckevort WJ, Vlieg E, Bakkers EP.

Nano Lett. 2007 Oct;7(10):3051-5. Epub 2007 Sep 21.

PMID:
17887714
19.

Secondary electron emission contrast of quantum wells in GaAs p-i-n junctions.

Grunbaum E, Barkay Z, Shapira Y, Barnham KW, Bushnell DB, Ekins-Daukes NJ, Mazzer M, Wilshaw P.

Microsc Microanal. 2009 Apr;15(2):125-9. doi: 10.1017/S1431927609090205.

PMID:
19284894
20.

Prismatic quantum heterostructures synthesized on molecular-beam epitaxy GaAs nanowires.

Fontcuberta i Morral A, Spirkoska D, Arbiol J, Heigoldt M, Ramon Morante J, Abstreiter G.

Small. 2008 Jul;4(7):899-903. doi: 10.1002/smll.200701091. No abstract available.

PMID:
18504720

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