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Items: 1 to 20 of 302

1.

One-step Ge/Si epitaxial growth.

Wu HC, Lin BH, Chen HC, Chen PC, Sheu HS, Lin IN, Chiu HT, Lee CY.

ACS Appl Mater Interfaces. 2011 Jul;3(7):2398-401. doi: 10.1021/am200310c. Epub 2011 Jun 8.

PMID:
21650184
2.

Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers.

Jung JH, Yoon HS, Kim YL, Song MS, Kim Y, Chen ZG, Zou J, Choi DY, Kang JH, Joyce HJ, Gao Q, Hoe Tan H, Jagadish C.

Nanotechnology. 2010 Jul 23;21(29):295602. doi: 10.1088/0957-4484/21/29/295602. Epub 2010 Jun 29.

PMID:
20585174
3.

Disilane chemisorption on Si(x)Ge(1-x)(100)-(2 x 1): molecular mechanisms and implications for film growth rates.

Ng RQ, Tok ES, Kang HC.

J Chem Phys. 2009 Jul 28;131(4):044707. doi: 10.1063/1.3191780.

PMID:
19655909
4.

Stranski-Krastanow growth of germanium on silicon nanowires.

Pan L, Lew KK, Redwing JM, Dickey EC.

Nano Lett. 2005 Jun;5(6):1081-5.

PMID:
15943447
5.

Strain field mapping of dislocations in a Ge/Si heterostructure.

Liu Q, Zhao C, Su S, Li J, Xing Y, Cheng B.

PLoS One. 2013 Apr 23;8(4):e62672. doi: 10.1371/journal.pone.0062672. Print 2013.

6.

Vertical epitaxial wire-on-wire growth of Ge/Si on Si(100) substrate.

Shimizu T, Zhang Z, Shingubara S, Senz S, Gösele U.

Nano Lett. 2009 Apr;9(4):1523-6. doi: 10.1021/nl8035756.

PMID:
19296610
7.

Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition.

Bollani M, Chrastina D, Fedorov A, Sordan R, Picco A, Bonera E.

Nanotechnology. 2010 Nov 26;21(47):475302. doi: 10.1088/0957-4484/21/47/475302. Epub 2010 Oct 29.

PMID:
21030775
8.

Germanium nanowire epitaxy: shape and orientation control.

Adhikari H, Marshall AF, Chidsey CE, McIntyre PC.

Nano Lett. 2006 Feb;6(2):318-23.

PMID:
16464057
9.

DC heating induced shape transformation of Ge structures on ultraclean Si(5 5 12) surfaces.

Dash JK, Rath A, Juluri RR, Raman PS, Müller K, Rosenauer A, Satyam PV.

J Phys Condens Matter. 2011 Apr 6;23(13):135002. doi: 10.1088/0953-8984/23/13/135002. Epub 2011 Mar 14.

PMID:
21403241
10.

Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars.

Skibitzki O, Capellini G, Yamamoto Y, Zaumseil P, Schubert MA, Schroeder T, Ballabio A, Bergamaschini R, Salvalaglio M, Miglio L, Montalenti F.

ACS Appl Mater Interfaces. 2016 Oct 5;8(39):26374-26380. Epub 2016 Sep 26.

PMID:
27603117
11.

On the formation and photoluminescence of Si(1-x)Ge(x) nanoparticles.

Chen PJ, Tsai MY, Chi CC, Perng TP.

J Nanosci Nanotechnol. 2007 Sep;7(9):3340-3.

PMID:
18019172
12.

[Comparative study on photoluminescence from Ge/PS and Ge/SiO2 thin films].

Sun XJ, Ma SY, Wei JJ, Xu XL.

Guang Pu Xue Yu Guang Pu Fen Xi. 2008 Sep;28(9):2033-7. Chinese.

PMID:
19093555
13.

Epitaxial growth of znO nanowires over the ZnO thin films deposited on the Si and sapphire substrates.

Park NK, Lee YJ, Jung JY, Lee WG, Bae YJ, Yoon SH, Han GB, Ryu SO, Lee TJ.

J Nanosci Nanotechnol. 2008 Sep;8(9):4653-7.

PMID:
19049078
14.
15.
16.

An atomically controlled Si film formation process at low temperatures using atmospheric-pressure VHF plasma.

Yasutake K, Kakiuchi H, Ohmi H, Inagaki K, Oshikane Y, Nakano M.

J Phys Condens Matter. 2011 Oct 5;23(39):394205. doi: 10.1088/0953-8984/23/39/394205. Epub 2011 Sep 15.

PMID:
21921309
17.

The impact of erbium incorporation on the structure and photophysics of silicon-germanium nanowires.

Wu J, Wieligor M, Zerda TW, Coffer JL.

Nanoscale. 2010 Dec;2(12):2657-67. doi: 10.1039/c0nr00476f. Epub 2010 Oct 8.

PMID:
20931125
18.

Epitaxial chemical vapor deposition growth of single-layer graphene over cobalt film crystallized on sapphire.

Ago H, Ito Y, Mizuta N, Yoshida K, Hu B, Orofeo CM, Tsuji M, Ikeda K, Mizuno S.

ACS Nano. 2010 Dec 28;4(12):7407-14. doi: 10.1021/nn102519b. Epub 2010 Nov 24.

PMID:
21105741
19.

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition.

Lin EL, Edmondson BI, Hu S, Ekerdt JG.

J Vis Exp. 2016 Jul 26;(113). doi: 10.3791/54268.

PMID:
27501462
20.

Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices.

Clavel M, Saladukha D, Goley PS, Ochalski TJ, Murphy-Armando F, Bodnar RJ, Hudait MK.

ACS Appl Mater Interfaces. 2015 Dec 9;7(48):26470-81. doi: 10.1021/acsami.5b07385. Epub 2015 Nov 23.

PMID:
26561963

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