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Items: 1 to 20 of 115

1.

n-InAs nanopyramids fully integrated into silicon.

Prucnal S, Facsko S, Baumgart C, Schmidt H, Liedke MO, Rebohle L, Shalimov A, Reuther H, Kanjilal A, Mücklich A, Helm M, Zuk J, Skorupa W.

Nano Lett. 2011 Jul 13;11(7):2814-8. doi: 10.1021/nl201178d. Epub 2011 Jun 6.

PMID:
21644567
2.

Sub 60 mV/decade switch using an InAs nanowire-Si heterojunction and turn-on voltage shift with a pulsed doping technique.

Tomioka K, Yoshimura M, Fukui T.

Nano Lett. 2013;13(12):5822-6. doi: 10.1021/nl402447h. Epub 2013 Nov 13.

PMID:
24215512
3.

Wet-chemical passivation of InAs: toward surfaces with high stability and low toxicity.

Jewett SA, Ivanisevic A.

Acc Chem Res. 2012 Sep 18;45(9):1451-9. doi: 10.1021/ar200282f. Epub 2012 Jun 20. Review.

PMID:
22716947
4.

Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors.

Takei K, Madsen M, Fang H, Kapadia R, Chuang S, Kim HS, Liu CH, Plis E, Nah J, Krishna S, Chueh YL, Guo J, Javey A.

Nano Lett. 2012 Apr 11;12(4):2060-6. doi: 10.1021/nl300228b. Epub 2012 Mar 19.

PMID:
22409386
5.

InAs nanowire transistors as gas sensor and the response mechanism.

Du J, Liang D, Tang H, Gao XP.

Nano Lett. 2009 Dec;9(12):4348-51. doi: 10.1021/nl902611f.

PMID:
19739664
6.

InAs/InP radial nanowire heterostructures as high electron mobility devices.

Jiang X, Xiong Q, Nam S, Qian F, Li Y, Lieber CM.

Nano Lett. 2007 Oct;7(10):3214-8. Epub 2007 Sep 15.

PMID:
17867718
7.

Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates.

Aagesen M, Johnson E, Sørensen CB, Mariager SO, Feidenhans'l R, Spiecker E, Nygård J, Lindelof PE.

Nat Nanotechnol. 2007 Dec;2(12):761-4. doi: 10.1038/nnano.2007.378. Epub 2007 Nov 25.

PMID:
18654427
8.

Correlating the nanostructure and electronic properties of InAs nanowires.

Schroer MD, Petta JR.

Nano Lett. 2010 May 12;10(5):1618-22. doi: 10.1021/nl904053j.

PMID:
20384350
9.

High electron mobility InAs nanowire field-effect transistors.

Dayeh SA, Aplin DP, Zhou X, Yu PK, Yu ET, Wang D.

Small. 2007 Feb;3(2):326-32.

PMID:
17199246
10.

Simultaneous integration of different nanowires on single textured Si (100) substrates.

Rieger T, Rosenbach D, Mussler G, Schäpers T, Grützmacher D, Lepsa MI.

Nano Lett. 2015 Mar 11;15(3):1979-86. doi: 10.1021/nl504854v. Epub 2015 Feb 9.

PMID:
25650521
11.

Straining nanomembranes via highly mismatched heteroepitaxial growth: InAs islands on compliant Si substrates.

Deneke C, Malachias A, Rastelli A, Merces L, Huang M, Cavallo F, Schmidt OG, Lagally MG.

ACS Nano. 2012 Nov 27;6(11):10287-95. doi: 10.1021/nn304151j. Epub 2012 Oct 17.

PMID:
23046451
12.

Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO2 mask.

Hsu CW, Chen YF, Su YK.

Nanotechnology. 2012 Dec 14;23(49):495306. doi: 10.1088/0957-4484/23/49/495306. Epub 2012 Nov 16.

PMID:
23154824
13.

InP nanocrystals on silicon for optoelectronic applications.

Prucnal S, Zhou S, Ou X, Reuther H, Liedke MO, Mücklich A, Helm M, Zuk J, Turek M, Pyszniak K, Skorupa W.

Nanotechnology. 2012 Dec 7;23(48):485204. doi: 10.1088/0957-4484/23/48/485204. Epub 2012 Nov 9.

PMID:
23138269
14.

Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber.

Tsukamoto S, Honma T, Bell GR, Ishii A, Arakawa Y.

Small. 2006 Mar;2(3):386-9. No abstract available. Erratum in: Small. 2006 May;2(5):587.

PMID:
17193056
15.

Sol-gel synthesis and photoluminescence of III-V semiconductor InAs nanocrystals embedded in silica glasses.

Yang H, Yao X, Huang D, Wang X, Shi HZ, Zhang B, Liu S, Fang Y.

J Nanosci Nanotechnol. 2005 May;5(5):786-9.

PMID:
16010940
16.

Thermal conductance of InAs nanowire composites.

Persson AI, Koh YK, Cahill DG, Samuelson L, Linke H.

Nano Lett. 2009 Dec;9(12):4484-8. doi: 10.1021/nl902809j.

PMID:
19995087
17.

Diameter-dependent electron mobility of InAs nanowires.

Ford AC, Ho JC, Chueh YL, Tseng YC, Fan Z, Guo J, Bokor J, Javey A.

Nano Lett. 2009 Jan;9(1):360-5. doi: 10.1021/nl803154m.

PMID:
19143505
18.

Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.

Egard M, Johansson S, Johansson AC, Persson KM, Dey AW, Borg BM, Thelander C, Wernersson LE, Lind E.

Nano Lett. 2010 Mar 10;10(3):809-12. doi: 10.1021/nl903125m.

PMID:
20131812
19.

Synthesis and patterning of gold nanostructures on InP and GaAs via galvanic displacement.

Hormozi Nezhad MR, Aizawa M, Porter LA Jr, Ribbe AE, Buriak JM.

Small. 2005 Nov;1(11):1076-81. No abstract available.

PMID:
17193399
20.

From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires.

Potts H, Friedl M, Amaduzzi F, Tang K, Tütüncüoglu G, Matteini F, Alarcon Lladó E, McIntyre PC, Fontcuberta i Morral A.

Nano Lett. 2016 Jan 13;16(1):637-43. doi: 10.1021/acs.nanolett.5b04367. Epub 2015 Dec 22.

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