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Items: 1 to 20 of 938

1.

The growth and characterization of ZnO/ZnTe core-shell nanowires and the electrical properties of ZnO/ZnTe core-shell nanowire field effect transistor.

Chao HY, You SH, Lu JY, Cheng JH, Chang YH, Liang CT, Wu CT.

J Nanosci Nanotechnol. 2011 Mar;11(3):2042-6.

PMID:
21449346
2.
3.

Comparison between the electrical properties of ZnO nanowires based field effect transistors fabricated by back- and top-gate approaches.

Park YK, Umar A, Kim SH, Kim JH, Lee EW, Vaseem M, Hahn YB.

J Nanosci Nanotechnol. 2008 Nov;8(11):6010-6.

PMID:
19198339
4.

The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing.

Chang YK, Hong FC.

Nanotechnology. 2009 May 13;20(19):195302. doi: 10.1088/0957-4484/20/19/195302. Epub 2009 Apr 20.

PMID:
19420638
5.

The effect of excimer laser annealing on ZnO nanowires and their field effect transistors.

Maeng J, Heo S, Jo G, Choe M, Kim S, Hwang H, Lee T.

Nanotechnology. 2009 Mar 4;20(9):095203. doi: 10.1088/0957-4484/20/9/095203. Epub 2009 Feb 6.

PMID:
19417481
6.

Optical properties of ZnO/ZnS and ZnO/ZnTe heterostructures for photovoltaic applications.

Schrier J, Demchenko DO, Wang LW, Alivisatos AP.

Nano Lett. 2007 Aug;7(8):2377-82. Epub 2007 Jul 24.

PMID:
17645365
7.

Synthesis and optical properties of ZnTe single-crystalline nanowires.

Huo HB, Dai L, Xia DY, Ran GZ, You LP, Zhang BR, Qin GG.

J Nanosci Nanotechnol. 2006 Apr;6(4):1182-4.

PMID:
16736786
8.

In situ growth, structure characterization, and enhanced photocatalysis of high-quality, single-crystalline ZnTe/ZnO branched nanoheterostructures.

Sun Y, Zhao Q, Gao J, Ye Y, Wang W, Zhu R, Xu J, Chen L, Yang J, Dai L, Liao ZM, Yu D.

Nanoscale. 2011 Oct 5;3(10):4418-26. doi: 10.1039/c1nr10922g. Epub 2011 Sep 19.

PMID:
21931901
9.

Concept of a thin film memory transistor based on ZnO nanoparticles insulated by a ligand shell.

Hirschmann J, Faber H, Halik M.

Nanoscale. 2012 Jan 21;4(2):444-7. doi: 10.1039/c2nr11589a. Epub 2011 Dec 12.

PMID:
22159764
10.

Temperature dependant structural and electrical properties of ZnO nanowire networks.

Al-Heniti S, Badran RI, Umar A, Al-Ghamdi A, Kim SH, Al-Marzouki F, Al-Hajry A, Al-Sayari SA, Al-Harbi T.

J Nanosci Nanotechnol. 2012 Jan;12(1):68-74.

PMID:
22523947
11.

Selective growth of vertical ZnO nanowire arrays using chemically anchored gold nanoparticles.

Ito D, Jespersen ML, Hutchison JE.

ACS Nano. 2008 Oct 28;2(10):2001-6. doi: 10.1021/nn800438m.

PMID:
19206444
12.

Single crystalline and core-shell indium-catalyzed germanium nanowires-a systematic thermal CVD growth study.

Xiang Y, Cao L, Conesa-Boj S, Estrade S, Arbiol J, Peiro F, Heiss M, Zardo I, Morante JR, Brongersma ML, Fontcuberta I Morral A.

Nanotechnology. 2009 Jun 17;20(24):245608. doi: 10.1088/0957-4484/20/24/245608. Epub 2009 May 27.

PMID:
19471084
13.

Fabrication and characterization of vertically aligned long ZnO nanorods on transparent substrate.

Kar JP, Choi JH, Das SN, Xiong J, Lee MJ, Lee TI, Myoung JM.

J Nanosci Nanotechnol. 2011 Mar;11(3):2185-90.

PMID:
21449367
14.

ZnO/Al2O3 core-shell nanorod arrays: growth, structural characterization, and luminescent properties.

Chen CY, Lin CA, Chen MJ, Lin GR, He JH.

Nanotechnology. 2009 May 6;20(18):185605. doi: 10.1088/0957-4484/20/18/185605. Epub 2009 Apr 15.

PMID:
19420621
15.

Realization of a silicon nanowire vertical surround-gate field-effect transistor.

Schmidt V, Riel H, Senz S, Karg S, Riess W, Gösele U.

Small. 2006 Jan;2(1):85-8. No abstract available.

PMID:
17193560
16.

Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor.

Sohn JI, Choi SS, Morris SM, Bendall JS, Coles HJ, Hong WK, Jo G, Lee T, Welland ME.

Nano Lett. 2010 Nov 10;10(11):4316-20. doi: 10.1021/nl1013713.

PMID:
20945844
17.

Ambient air effects on electrical transport properties of ZnO nanorod transistors.

Park JY, Kim JJ, Kim SS.

J Nanosci Nanotechnol. 2008 Nov;8(11):5929-33.

PMID:
19198328
18.

Flexible inorganic nanowire light-emitting diode.

Nadarajah A, Word RC, Meiss J, Könenkamp R.

Nano Lett. 2008 Feb;8(2):534-7. doi: 10.1021/nl072784l. Epub 2008 Jan 26.

PMID:
18220439
19.

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics.

Ju S, Facchetti A, Xuan Y, Liu J, Ishikawa F, Ye P, Zhou C, Marks TJ, Janes DB.

Nat Nanotechnol. 2007 Jun;2(6):378-84. doi: 10.1038/nnano.2007.151. Epub 2007 Jun 3.

PMID:
18654311
20.

Correlation between resistance and field emission performance of individual ZnO one-dimensional nanostructures.

She J, Xiao Z, Yang Y, Deng S, Chen J, Yang G, Xu N.

ACS Nano. 2008 Oct 28;2(10):2015-22. doi: 10.1021/nn800283u.

PMID:
19206446

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