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Items: 1 to 20 of 250

1.

Microphotoluminescence and perfect ordering of SiGe islands on pit-patterned Si(001) substrates.

Hackl F, Grydlik M, Brehm M, Groiss H, Schäffler F, Fromherz T, Bauer G.

Nanotechnology. 2011 Apr 22;22(16):165302. doi: 10.1088/0957-4484/22/16/165302.

PMID:
21393825
2.

Three-dimensional Si/Ge quantum dot crystals.

Grützmacher D, Fromherz T, Dais C, Stangl J, Müller E, Ekinci Y, Solak HH, Sigg H, Lechner RT, Wintersberger E, Birner S, Holý V, Bauer G.

Nano Lett. 2007 Oct;7(10):3150-6.

PMID:
17892317
3.

Gold-catalyzed oxide nanopatterns for the directed assembly of Ge island arrays on Si.

Robinson JT, Ratto F, Moutanabbir O, Heun S, Locatelli A, Mentes TO, Aballe L, Dubon OD.

Nano Lett. 2007 Sep;7(9):2655-9.

PMID:
17672506
4.

Global faceting behavior of strained Ge islands on Si.

Robinson JT, Rastelli A, Schmidt O, Dubon OD.

Nanotechnology. 2009 Feb 25;20(8):085708. doi: 10.1088/0957-4484/20/8/085708.

PMID:
19417469
5.

Gold-catalyzed vapor-liquid-solid germanium-nanowire nucleation on porous silicon.

Koto M, Marshall AF, Goldthorpe IA, McIntyre PC.

Small. 2010 May 7;6(9):1032-7. doi: 10.1002/smll.200901764.

PMID:
20411571
6.

Synthesis of Si nanosheets by a chemical vapor deposition process and their blue emissions.

Kim U, Kim I, Park Y, Lee KY, Yim SY, Park JG, Ahn HG, Park SH, Choi HJ.

ACS Nano. 2011 Mar 22;5(3):2176-81. doi: 10.1021/nn103385p.

PMID:
21322533
7.

Enhanced photoluminescence due to lateral ordering of GeSi quantum dots on patterned Si(001) substrates.

Chen Y, Pan B, Nie T, Chen P, Lu F, Jiang Z, Zhong Z.

Nanotechnology. 2010 Apr 30;21(17):175701. doi: 10.1088/0957-4484/21/17/175701.

PMID:
20357407
8.

Diameter-dependent composition of vapor-liquid-solid grown Si(1-x)Ge(x) nanowires.

Zhang X, Lew KK, Nimmatoori P, Redwing JM, Dickey EC.

Nano Lett. 2007 Oct;7(10):3241-5.

PMID:
17894516
9.

Observation of hole accumulation in Ge/Si core/shell nanowires using off-axis electron holography.

Li L, Smith DJ, Dailey E, Madras P, Drucker J, McCartney MR.

Nano Lett. 2011 Feb 9;11(2):493-7. doi: 10.1021/nl1033107.

PMID:
21244011
10.

The fabrication and application of patterned Si(001) substrates with ordered pits via nanosphere lithography.

Chen P, Fan Y, Zhong Z.

Nanotechnology. 2009 Mar 4;20(9):095303. doi: 10.1088/0957-4484/20/9/095303.

PMID:
19417486
11.

Stranski-Krastanow growth of germanium on silicon nanowires.

Pan L, Lew KK, Redwing JM, Dickey EC.

Nano Lett. 2005 Jun;5(6):1081-5.

PMID:
15943447
12.

Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates.

Grydlik M, Langer G, Fromherz T, Schäffler F, Brehm M.

Nanotechnology. 2013 Mar 15;24(10):105601. doi: 10.1088/0957-4484/24/10/105601.

PMID:
23416837
13.

Tunable visible and near-IR emission from sub-10 nm etched single-crystal Si nanopillars.

Walavalkar SS, Hofmann CE, Homyk AP, Henry MD, Atwater HA, Scherer A.

Nano Lett. 2010 Nov 10;10(11):4423-8. doi: 10.1021/nl102140k.

PMID:
20919695
14.

Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition.

Bollani M, Chrastina D, Fedorov A, Sordan R, Picco A, Bonera E.

Nanotechnology. 2010 Nov 26;21(47):475302. doi: 10.1088/0957-4484/21/47/475302.

PMID:
21030775
15.

Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands.

Brehm M, Grydlik M, Hackl F, Lausecker E, Fromherz T, Bauer G.

Nanoscale Res Lett. 2010 Aug 5;5(12):1868-72. doi: 10.1007/s11671-010-9713-z.

16.

Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting stamps.

Vasko SE, Kapetanović A, Talla V, Brasino MD, Zhu Z, Scholl A, Torrey JD, Rolandi M.

Nano Lett. 2011 Jun 8;11(6):2386-9. doi: 10.1021/nl200742x.

PMID:
21574626
17.

Ultrasmooth silver thin films deposited with a germanium nucleation layer.

Logeeswaran Vj, Kobayashi NP, Islam MS, Wu W, Chaturvedi P, Fang NX, Wang SY, Williams RS.

Nano Lett. 2009 Jan;9(1):178-82. doi: 10.1021/nl8027476.

PMID:
19105737
18.

Anhydrous solution synthesis of germanium nanocrystals from the germanium(II) precursor Ge[N(SiMe3)2]2.

Gerung H, Bunge SD, Boyle TJ, Brinker CJ, Han SM.

Chem Commun (Camb). 2005 Apr 14;(14):1914-6.

PMID:
15795786
19.

Directed self-assembly of Ge nanostructures on very high index, highly anisotropic Si(hkl) surfaces.

Ohmori K, Foo YL, Hong S, Wen JG, Greene JE, Petrov I.

Nano Lett. 2005 Feb;5(2):369-72.

PMID:
15794627
20.

In situ reflection electron microscopy of Ge island nucleation on mesa structures.

Ross FM, Kammler M, Walsh ME, Reuter MC.

Microsc Microanal. 2004 Feb;10(1):105-11.

PMID:
15306072
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