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Items: 1 to 20 of 168

1.

Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular beam epitaxy.

Cui J, Lv Y, Yang XJ, Fan YL, Zhong Z, Jiang ZM.

Nanotechnology. 2011 Mar 25;22(12):125601. doi: 10.1088/0957-4484/22/12/125601. Epub 2011 Feb 14.

PMID:
21317488
2.

Towards controllable growth of self-assembled SiGe single and double quantum dot nanostructures.

Ma Y, Huang S, Zeng C, Zhou T, Zhong Z, Zhou T, Fan Y, Yang X, Xia J, Jiang Z.

Nanoscale. 2014 Apr 21;6(8):3941-8. doi: 10.1039/c3nr04114j. Epub 2013 Oct 31.

PMID:
24173689
3.

[Photoluminescence investigation of InAs bimodal self-assembled quantum dots state filling].

Jia GZ, Yao JH, Zhang CL, Shu Q, Liu RB, Ye XL, Wang ZG.

Guang Pu Xue Yu Guang Pu Fen Xi. 2007 Nov;27(11):2178-81. Chinese.

PMID:
18260388
4.

Three-dimensional Si/Ge quantum dot crystals.

Grützmacher D, Fromherz T, Dais C, Stangl J, Müller E, Ekinci Y, Solak HH, Sigg H, Lechner RT, Wintersberger E, Birner S, Holý V, Bauer G.

Nano Lett. 2007 Oct;7(10):3150-6. Epub 2007 Sep 25.

PMID:
17892317
5.

The growth of a low defect InAs HEMT structure on Si by using an AlGaSb buffer layer containing InSb quantum dots for dislocation termination.

Ko KM, Seo JH, Kim DE, Lee ST, Noh YK, Kim MD, Oh JE.

Nanotechnology. 2009 Jun 3;20(22):225201. doi: 10.1088/0957-4484/20/22/225201. Epub 2009 May 12.

PMID:
19433876
6.

Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots.

Talochkin AB, Cherkov AG.

Nanotechnology. 2009 Aug 26;20(34):345702. doi: 10.1088/0957-4484/20/34/345702. Epub 2009 Aug 4.

PMID:
19652280
7.

InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates.

Bru-Chevallier C, El Akra A, Pelloux-Gervais D, Dumont H, Canut B, Chauvin N, Regreny P, Gendry M, Patriarche G, Jancu JM, Even J, Noe P, Calvo V, Salem B.

J Nanosci Nanotechnol. 2011 Oct;11(10):9153-9.

PMID:
22400316
8.

Factors influencing epitaxial growth of three-dimensional Ge quantum dot crystals on pit-patterned Si substrate.

Ma YJ, Zhong Z, Yang XJ, Fan YL, Jiang ZM.

Nanotechnology. 2013 Jan 11;24(1):015304. doi: 10.1088/0957-4484/24/1/015304. Epub 2012 Dec 7.

PMID:
23220787
9.

Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots.

Cui J, Lin JH, Wu YQ, Fan YL, Zhong Z, Yang XJ, Jiang ZM.

Nanoscale Res Lett. 2011 Dec;6(1):59. doi: 10.1007/s11671-010-9811-y. Epub 2010 Oct 2.

10.

Photoluminescence efficiency and size distribution of self assembled ge dots on porous TiO2.

Rowell NL, Lockwood DJ, Amiard G, Favre L, Ronda A, Berbezier I, Faustini M, Grosso D.

J Nanosci Nanotechnol. 2011 Oct;11(10):9190-5.

PMID:
22400322
11.

Ultra-narrow emission from single GaAs self-assembled quantum dots grown by droplet epitaxy.

Mano T, Abbarchi M, Kuroda T, Mastrandrea CA, Vinattieri A, Sanguinetti S, Sakoda K, Gurioli M.

Nanotechnology. 2009 Sep 30;20(39):395601. doi: 10.1088/0957-4484/20/39/395601. Epub 2009 Sep 2.

PMID:
19724114
12.

Formation of Ge quantum dots array in layer-cake technique for advanced photovoltaics.

Chien CY, Chang YJ, Chang JE, Lee MS, Chen WY, Hsu TM, Li PW.

Nanotechnology. 2010 Dec 17;21(50):505201. doi: 10.1088/0957-4484/21/50/505201. Epub 2010 Nov 22.

PMID:
21098937
13.

Shape and size distribution of molecular beam epitaxy grown self-assembled Ge islands on Si (001) substrates.

Singha RK, Das S, Das K, Majumdar S, Dhar A, Ray SK.

J Nanosci Nanotechnol. 2008 Aug;8(8):4101-5.

PMID:
19049183
14.

Synthesis and fundamental studies of (H3Ge)xSiH4-x molecules: precursors to semiconductor hetero- and nanostructures on Si.

Ritter CJ, Hu C, Chizmeshya AV, Tolle J, Klewer D, Tsong IS, Kouvetakis J.

J Am Chem Soc. 2005 Jul 13;127(27):9855-64.

PMID:
15998091
15.

Effect of rapid thermal annealing on the electrical properties of GaAs Schottky diodes embedded with self-assembled InAs quantum dots.

Colleaux F, Lee J, Yu BY, Han I, Choi W, Song JD, Ghibaudo G.

J Nanosci Nanotechnol. 2008 Oct;8(10):5558-60.

PMID:
19198498
16.

Self-assembled growth of GaAs anti quantum dots in InAs matrix by migration enhanced molecular beam epitaxy.

Lee EH, Song JD, Kim SY, Han IK, Chang SK, Lee JI.

J Nanosci Nanotechnol. 2012 Feb;12(2):1480-2.

PMID:
22629983
17.

Conductive atomic force microscopy studies on the transformation of GeSi quantum dots to quantum rings.

Zhang SL, Xue F, Wu R, Cui J, Jiang ZM, Yang XJ.

Nanotechnology. 2009 Apr 1;20(13):135703. doi: 10.1088/0957-4484/20/13/135703. Epub 2009 Mar 11.

PMID:
19420512
18.

Influence of Si interdiffusion on carbon-induced growth of Ge quantum dots: a strategy for tuning island density.

Bernardi A, Ossó JO, Alonso MI, Goñi AR, Garriga M.

Nanotechnology. 2006 May 28;17(10):2602-8. doi: 10.1088/0957-4484/17/10/026. Epub 2006 Apr 28.

PMID:
21727511
19.

The properties of Ge quantum rings deposited by pulsed laser deposition.

Ma X.

J Nanosci Nanotechnol. 2010 Jul;10(7):4640-3.

PMID:
21128471
20.

Effects of pulsed laser radiation on epitaxial self-assembled Ge quantum dots grown on Si substrates.

del Pino AP, György E, Marcus IC, Roqueta J, Alonso MI.

Nanotechnology. 2011 Jul 22;22(29):295304. doi: 10.1088/0957-4484/22/29/295304. Epub 2011 Jun 17.

PMID:
21680960

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