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Items: 1 to 20 of 103

1.

Si/Ge junctions formed by nanomembrane bonding.

Kiefer AM, Paskiewicz DM, Clausen AM, Buchwald WR, Soref RA, Lagally MG.

ACS Nano. 2011 Feb 22;5(2):1179-89. doi: 10.1021/nn103149c. Epub 2011 Jan 19.

PMID:
21247201
2.

Evolution of Ge nanoislands on Si(110)-'16 x 2' surface under thermal annealing studied using STM.

Gangopadhyay S, Yoshimura M, Ueda K.

Nanotechnology. 2009 Nov 25;20(47):475401. doi: 10.1088/0957-4484/20/47/475401. Epub 2009 Oct 29.

PMID:
19875880
3.

Voltage sharing effect and interface state calculation of a wafer-bonding Ge/Si avalanche photodiode with an interfacial GeO2 insulator layer.

Ke S, Lin S, Li X, Li J, Xu J, Li C, Chen S.

Opt Express. 2016 Feb 8;24(3):1943-52. doi: 10.1364/OE.24.001943.

PMID:
26906771
4.

Molecular-based synthetic approach to new group IV materials for high-efficiency, low-cost solar cells and Si-based optoelectronics.

Fang YY, Xie J, Tolle J, Roucka R, D'Costa VR, Chizmeshya AV, Menendez J, Kouvetakis J.

J Am Chem Soc. 2008 Nov 26;130(47):16095-102. doi: 10.1021/ja806636c.

PMID:
19032100
5.

Defect-free single-crystal SiGe: a new material from nanomembrane strain engineering.

Paskiewicz DM, Tanto B, Savage DE, Lagally MG.

ACS Nano. 2011 Jul 26;5(7):5814-22. doi: 10.1021/nn201547k. Epub 2011 Jun 16.

PMID:
21650206
6.

Kinetics of Ge diffusion, desorption and pit formation dynamics during annealing of Si(0.8)Ge(0.2)/Si(001) virtual substrates.

Zhang Z, Pan JS, Zhang J, Tok ES.

Phys Chem Chem Phys. 2010 Jul 14;12(26):7171-83. doi: 10.1039/b927274g. Epub 2010 May 24.

PMID:
20498899
7.

[Comparative study on photoluminescence from Ge/PS and Ge/SiO2 thin films].

Sun XJ, Ma SY, Wei JJ, Xu XL.

Guang Pu Xue Yu Guang Pu Fen Xi. 2008 Sep;28(9):2033-7. Chinese.

PMID:
19093555
8.

Single crystalline film on glass for thin film solar cells.

Lin CH, Yang YJ, Encinas E, Chen WY, Tsai JJ, Liu CW.

J Nanosci Nanotechnol. 2009 Jun;9(6):3622-6.

PMID:
19504892
9.

Anisotropic thermal conductivity of Ge quantum-dot and symmetrically strained Si/Ge superlattices.

Liu WL, Borca-Tasciuc T, Chen G, Liu JL, Wang KL.

J Nanosci Nanotechnol. 2001 Mar;1(1):39-42.

PMID:
12914029
10.

Thermal behavior and film formation from an organogermanium polymer/nanoparticle precursor.

Chiu HW, Kauzlarich SM, Sutter E.

Langmuir. 2006 Jun 6;22(12):5455-8.

PMID:
16732677
11.

Synthesis of butane-like SiGe hydrides: enabling precursors for CVD of Ge-rich semiconductors.

Chizmeshya AV, Ritter CJ, Hu C, Tice JB, Tolle J, Nieman RA, Tsong IS, Kouvetakis J.

J Am Chem Soc. 2006 May 31;128(21):6919-30.

PMID:
16719472
12.

Interface charge induced p-type characteristics of aligned Si(1-x)Gex nanowires.

Seong HK, Jeon EK, Kim MH, Oh H, Lee JO, Kim JJ, Choi HJ.

Nano Lett. 2008 Nov;8(11):3656-61. doi: 10.1021/nl8016362. Epub 2008 Oct 28.

PMID:
18954130
13.

An X-ray diffraction and MAS NMR study of the thermal expansion properties of calcined siliceous ferrierite.

Bull I, Lightfoot P, Villaescusa LA, Bull LM, Gover RK, Evans JS, Morris RE.

J Am Chem Soc. 2003 Apr 9;125(14):4342-9.

PMID:
12670258
14.

Hybrid plasma bonding for void-free strong bonded interface of silicon/glass at 200 degrees C.

Howlader MM, Kibria MG, Zhang F, Kim MJ.

Talanta. 2010 Jul 15;82(2):508-15. doi: 10.1016/j.talanta.2010.05.001. Epub 2010 May 11.

PMID:
20602928
15.

Synthesis of silicon-based infrared semiconductors in the Ge-Sn system using molecular chemistry methods.

Taraci J, Zollner S, McCartney MR, Menendez J, Santana-Aranda MA, Smith DJ, Haaland A, Tutukin AV, Gundersen G, Wolf G, Kouvetakis J.

J Am Chem Soc. 2001 Nov 7;123(44):10980-7.

PMID:
11686702
16.

Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed.

Hu Y, Xiang J, Liang G, Yan H, Lieber CM.

Nano Lett. 2008 Mar;8(3):925-30. doi: 10.1021/nl073407b. Epub 2008 Feb 6.

PMID:
18251518
17.

Diffusion in Si(x)Ge(1-x)/Si nanowire heterostructures.

Zhang X, Kulik J, Dickey EC.

J Nanosci Nanotechnol. 2007 Feb;7(2):717-20.

PMID:
17450821
18.

Thermal conductivity of Si-Ge quantum dot superlattices.

Haskins JB, Kınacı A, Cağın T.

Nanotechnology. 2011 Apr 15;22(15):155701. doi: 10.1088/0957-4484/22/15/155701. Epub 2011 Mar 10.

PMID:
21389580
19.

Thiol-terminated monolayers on oxide-free Si: assembly of semiconductor-alkyl-S-metal junctions.

Böcking T, Salomon A, Cahen D, Gooding JJ.

Langmuir. 2007 Mar 13;23(6):3236-41. Epub 2007 Feb 1.

PMID:
17266341
20.

Significant reduction of thermal conductivity in Si/Ge core-shell nanowires.

Hu M, Giapis KP, Goicochea JV, Zhang X, Poulikakos D.

Nano Lett. 2011 Feb 9;11(2):618-23. doi: 10.1021/nl103718a. Epub 2010 Dec 9.

PMID:
21141989

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