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Items: 1 to 20 of 178

1.

Lateral interdot carrier transfer in an InAs quantum dot cluster grown on a pyramidal GaAs surface.

Liang BL, Wong PS, Pavarelli N, Tatebayashi J, Ochalski TJ, Huyet G, Huffaker DL.

Nanotechnology. 2011 Feb 4;22(5):055706. doi: 10.1088/0957-4484/22/5/055706. Epub 2010 Dec 22.

PMID:
21178233
2.

InAs quantum dots on nanopatterned GaAs (001) surface: the growth, optical properties, and device implementation.

Wong PS, Liang B, Huffaker DL.

J Nanosci Nanotechnol. 2010 Mar;10(3):1537-50.

PMID:
20355542
3.

Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition.

Guimard D, Ishida M, Bordel D, Li L, Nishioka M, Tanaka Y, Ekawa M, Sudo H, Yamamoto T, Kondo H, Sugawara M, Arakawa Y.

Nanotechnology. 2010 Mar 12;21(10):105604. doi: 10.1088/0957-4484/21/10/105604. Epub 2010 Feb 16.

PMID:
20160334
4.

InAs quantum dot clusters grown on GaAs droplet templates: surface morphologies and optical properties.

Liang BL, Dorogan VG, Mazur YI, Strom NW, Lee JH, Sablon KA, Wang ZhM, Salamo GJ.

J Nanosci Nanotechnol. 2009 May;9(5):3320-4.

PMID:
19453010
5.

Growth and characterization of self-assembled InAs/InP quantum dot structures.

Barik S, Tan HH, Wong-Leung J, Jagadish C.

J Nanosci Nanotechnol. 2010 Mar;10(3):1525-36.

PMID:
20355541
6.

Enhancing optical characteristics of InAs/InGaAsSb quantum dot structures with long-excited state emission at 1.31 μm.

Liu WS, Tseng HL, Kuo PC.

Opt Express. 2014 Aug 11;22(16):18860-9. doi: 10.1364/OE.22.018860.

PMID:
25320972
7.

Photoluminescence properties of InAs nanowires grown on GaAs and Si substrates.

Sun MH, Leong ES, Chin AH, Ning CZ, Cirlin GE, Samsonenko YB, Dubrovskii VG, Chuang L, Chang-Hasnain C.

Nanotechnology. 2010 Aug 20;21(33):335705. doi: 10.1088/0957-4484/21/33/335705. Epub 2010 Jul 26.

PMID:
20657047
8.

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer.

Liu Y, Liang B, Guo Q, Wang S, Fu G, Fu N, Wang ZM, Mazur YI, Salamo GJ.

Nanoscale Res Lett. 2015 Dec;10(1):973. doi: 10.1186/s11671-015-0973-5. Epub 2015 Jun 26.

9.

Structural characterization of InAs quantum dot chains grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs(100).

Hakkarainen TV, Tommila J, Schramm A, Tukiainen A, Ahorinta R, Dumitrescu M, Guina M.

Nanotechnology. 2011 Jul 22;22(29):295604. doi: 10.1088/0957-4484/22/29/295604. Epub 2011 Jun 17.

PMID:
21680961
10.

Comparative study on InAs/InGaAs dots-in-a-well structure grown on GaAs(311) B and (100) substrates.

Wang L, Li M, Xiong M, Wang W, Gao H, Zhao L.

J Nanosci Nanotechnol. 2010 Nov;10(11):7359-61.

PMID:
21137934
11.

Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: control of type I to type II transition.

He J, Reyner CJ, Liang BL, Nunna K, Huffaker DL, Pavarelli N, Gradkowski K, Ochalski TJ, Huyet G, Dorogan VG, Mazur YI, Salamo GJ.

Nano Lett. 2010 Aug 11;10(8):3052-6. doi: 10.1021/nl102237n.

PMID:
20698619
12.

Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure.

Lin A, Liang BL, Dorogan VG, Mazur YI, Tarasov GG, Salamo GJ, Huffaker DL.

Nanotechnology. 2013 Feb 22;24(7):075701. doi: 10.1088/0957-4484/24/7/075701. Epub 2013 Jan 28.

PMID:
23358560
13.

Growth of InAs quantum dots on GaAs nanowires by metal organic chemical vapor deposition.

Yan X, Zhang X, Ren X, Huang H, Guo J, Guo X, Liu M, Wang Q, Cai S, Huang Y.

Nano Lett. 2011 Sep 14;11(9):3941-5. doi: 10.1021/nl202190n. Epub 2011 Aug 19.

PMID:
21848312
14.

Inhomogeneous broadening and alloy intermixing in low proton dose implanted InAs/GaAs self-assembled quantum dots.

Zaâboub Z, Ilahi B, Sfaxi L, Maaref H, Salem B, Aimez V, Morris D.

Nanotechnology. 2008 Jul 16;19(28):285715. doi: 10.1088/0957-4484/19/28/285715. Epub 2008 Jun 3.

PMID:
21828749
15.

State filling dependent luminescence in hybrid tunnel coupled dot-well structures.

Mazur YI, Dorogan VG, Ware ME, Marega E Jr, Benamara M, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ.

Nanoscale. 2012 Dec 7;4(23):7509-16. doi: 10.1039/c2nr32477f.

PMID:
23099560
16.

Formation mechanism and optical properties of InAs quantum dots on the surface of GaAs nanowires.

Yan X, Zhang X, Ren X, Lv X, Li J, Wang Q, Cai S, Huang Y.

Nano Lett. 2012 Apr 11;12(4):1851-6. doi: 10.1021/nl204204f. Epub 2012 Mar 26.

PMID:
22439825
17.

Dense arrays of ordered pyramidal quantum dots with narrow linewidth photoluminescence spectra.

Surrente A, Gallo P, Felici M, Dwir B, Rudra A, Kapon E.

Nanotechnology. 2009 Oct 14;20(41):415205. doi: 10.1088/0957-4484/20/41/415205. Epub 2009 Sep 18.

PMID:
19762950
18.

Optical properties of coupled three-dimensional Ge quantum dot crystals.

Ma Y, Zhong Z, Lv Q, Qiu W, Wang X, Zhou T, Fan Y, Jiang Z.

Opt Express. 2013 Mar 11;21(5):6053-60. doi: 10.1364/OE.21.006053.

PMID:
23482173
19.

Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates.

Skiba-Szymanska J, Jamil A, Farrer I, Ward MB, Nicoll CA, Ellis DJ, Griffiths JP, Anderson D, Jones GA, Ritchie DA, Shields AJ.

Nanotechnology. 2011 Feb 11;22(6):065302. doi: 10.1088/0957-4484/22/6/065302. Epub 2011 Jan 7.

PMID:
21212488
20.

Effect of growth temperature and quantum structure on InAs/GaAs quantum dot solar cell.

Park MH, Kim HS, Park SJ, Song JD, Kim SH, Lee YJ, Choi WJ, Park JH.

J Nanosci Nanotechnol. 2014 Apr;14(4):2955-9.

PMID:
24734716

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