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Items: 1 to 20 of 94

1.

Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP.

Hakkarainen T, Schramm A, Tukiainen A, Ahorinta R, Toikkanen L, Guina M.

Nanoscale Res Lett. 2010 Aug 20;5(12):1892-6. doi: 10.1007/s11671-010-9747-2.

2.

Morphology and optical properties of single- and multi-layer InAs quantum dots.

Hsu CC, Hsu RQ, Wu YH.

J Electron Microsc (Tokyo). 2010 Aug;59 Suppl 1:S149-54. doi: 10.1093/jmicro/dfq053. Epub 2010 Jun 24.

PMID:
20576720
3.

Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer.

Ahmad I, Avrutin V, Morkoç H, Moore JC, Baski AA.

J Nanosci Nanotechnol. 2007 Aug;7(8):2889-93.

PMID:
17685312
4.

Improved quantum dot stacking for intermediate band solar cells using strain compensation.

Simmonds PJ, Sun M, Laghumavarapu RB, Liang B, Norman AG, Luo JW, Huffaker DL.

Nanotechnology. 2014 Nov 7;25(44):445402. doi: 10.1088/0957-4484/25/44/445402. Epub 2014 Oct 16.

PMID:
25319397
5.

Nucleation sequence of InAs quantum dots on cross-hatch patterns.

Kanjanachuchai S, Limwongse T.

J Nanosci Nanotechnol. 2011 Dec;11(12):10787-91.

PMID:
22408996
6.

Site-controlled lateral arrangements of InAs quantum dots grown on GaAs(001) patterned substrates by atomic force microscopy local oxidation nanolithography.

Martín-Sánchez J, Alonso-González P, Herranz J, González Y, González L.

Nanotechnology. 2009 Mar 25;20(12):125302. doi: 10.1088/0957-4484/20/12/125302. Epub 2009 Mar 3.

PMID:
19420463
7.

Shape and size control of InAs/InP (113)B quantum dots by Sb deposition during the capping procedure.

Lu W, Bozkurt M, Keizer JG, Rohel T, Folliot H, Bertru N, Koenraad PM.

Nanotechnology. 2011 Feb 4;22(5):055703. doi: 10.1088/0957-4484/22/5/055703. Epub 2010 Dec 22.

PMID:
21178229
8.

Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell.

Li S, Bi J, Li M, Yang M, Song M, Liu G, Xiong W, Li Y, Fang Y, Chen C, Lin G, Chen W, Wu C, Wang D.

Nanoscale Res Lett. 2015 Mar 7;10:111. doi: 10.1186/s11671-015-0821-7. eCollection 2015.

9.

Spatial regularity of InAs-GaAs quantum dots: quantifying the dependence of lateral ordering on growth rate.

Konishi T, Clarke E, Burrows CW, Bomphrey JJ, Murray R, Bell GR.

Sci Rep. 2017 Feb 13;7:42606. doi: 10.1038/srep42606.

10.

Site-controlled growth of InP/GaInP quantum dots on GaAs substrates.

Baumann V, Stumpf F, Steinl T, Forchel A, Schneider C, Höfling S, Kamp M.

Nanotechnology. 2012 Sep 21;23(37):375301. doi: 10.1088/0957-4484/23/37/375301. Epub 2012 Aug 24.

PMID:
22922443
11.

High quality InAs quantum dots grown on patterned Si with a GaAs buffer layer.

Wang Y, Zou J, Zhao ZM, Hao Z, Wang KL.

Nanotechnology. 2009 Jul 29;20(30):305301. doi: 10.1088/0957-4484/20/30/305301. Epub 2009 Jul 7.

PMID:
19581699
12.

InAs/GaInAs(N) quantum dots on GaAs substrate for single photon emitters above 1300 nm.

Strauss M, Höfling S, Forchel A.

Nanotechnology. 2009 Dec 16;20(50):505601. doi: 10.1088/0957-4484/20/50/505601. Epub 2009 Nov 12.

PMID:
19907066
13.

Enhancing optical characteristics of InAs/InGaAsSb quantum dot structures with long-excited state emission at 1.31 μm.

Liu WS, Tseng HL, Kuo PC.

Opt Express. 2014 Aug 11;22(16):18860-9. doi: 10.1364/OE.22.018860.

PMID:
25320972
14.

Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique.

Dhawan T, Tyagi R, Bag R, Singh M, Mohan P, Haldar T, Murlidharan R, Tandon R.

Nanoscale Res Lett. 2009 Sep 19;5(1):31-7. doi: 10.1007/s11671-009-9439-y.

15.

Effect of growth temperature and quantum structure on InAs/GaAs quantum dot solar cell.

Park MH, Kim HS, Park SJ, Song JD, Kim SH, Lee YJ, Choi WJ, Park JH.

J Nanosci Nanotechnol. 2014 Apr;14(4):2955-9.

PMID:
24734716
16.

Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots.

Reyes DF, González D, Ulloa JM, Sales DL, Dominguez L, Mayoral A, Hierro A.

Nanoscale Res Lett. 2012 Nov 27;7(1):653. doi: 10.1186/1556-276X-7-653.

17.

InAs quantum dots capped by GaAs, In0.4Ga0.6As dots, and In0.2Ga0.8As well.

Fu Y, Wang SM, Ferdos F, Sadeghi M, Larsson A.

J Nanosci Nanotechnol. 2002 Jun-Aug;2(3-4):421-6.

PMID:
12908273
18.

Quantitative analysis of interfacial strain in InAs/GaSb superlattices by aberration-corrected HRTEM and HAADF-STEM.

Mahalingam K, Haugan HJ, Brown GJ, Eyink KG.

Ultramicroscopy. 2013 Apr;127:70-5. doi: 10.1016/j.ultramic.2012.09.005. Epub 2012 Dec 8.

PMID:
23298538
19.

Long-wavelength emission InAs quantum dots grown on InGaAs metamorphic buffers.

Wu BP, Wu DH, Xiong YH, Huang SS, Ni HQ, Xu YQ, Niu ZC.

J Nanosci Nanotechnol. 2009 Feb;9(2):1333-6.

PMID:
19441518
20.

General route for the decomposition of InAs quantum dots during the capping process.

González D, Reyes DF, Utrilla AD, Ben T, Braza V, Guzman A, Hierro A, Ulloa JM.

Nanotechnology. 2016 Mar 29;27(12):125703. doi: 10.1088/0957-4484/27/12/125703. Epub 2016 Feb 18.

PMID:
26891164

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