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Items: 1 to 20 of 94

1.

Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation.

Ferragut R, Calloni A, Dupasquier A, Isella G.

Nanoscale Res Lett. 2010 Oct 24;5(12):1942-7. doi: 10.1007/s11671-010-9818-4.

2.

X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates.

Zaumseil P, Kozlowski G, Yamamoto Y, Schubert MA, Schroeder T.

J Appl Crystallogr. 2013 Aug 1;46(Pt 4):868-873. Epub 2013 Jun 7.

3.

Characterization of SiGe thin films using a laboratory X-ray instrument.

Ulyanenkova T, Myronov M, Benediktovitch A, Mikhalychev A, Halpin J, Ulyanenkov A.

J Appl Crystallogr. 2013 Aug 1;46(Pt 4):898-902. Epub 2013 Jun 7.

4.

Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane.

Knapp TJ, Mohr RT, Li YS, Thorgrimsson B, Foote RH, Wu X, Ward DR, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA.

Nanotechnology. 2016 Apr 15;27(15):154002. doi: 10.1088/0957-4484/27/15/154002. Epub 2016 Mar 3.

PMID:
26938505
5.

Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth.

Zaumseil P, Yamamoto Y, Schubert MA, Capellini G, Skibitzki O, Zoellner MH, Schroeder T.

Nanotechnology. 2015 Sep 4;26(35):355707. doi: 10.1088/0957-4484/26/35/355707. Epub 2015 Aug 12.

PMID:
26267559
6.

Strain field mapping of dislocations in a Ge/Si heterostructure.

Liu Q, Zhao C, Su S, Li J, Xing Y, Cheng B.

PLoS One. 2013 Apr 23;8(4):e62672. doi: 10.1371/journal.pone.0062672. Print 2013.

7.

Defect-free single-crystal SiGe: a new material from nanomembrane strain engineering.

Paskiewicz DM, Tanto B, Savage DE, Lagally MG.

ACS Nano. 2011 Jul 26;5(7):5814-22. doi: 10.1021/nn201547k. Epub 2011 Jun 16.

PMID:
21650206
8.
9.

The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nano-pillars.

Zaumseil P, Kozlowski G, Schubert MA, Yamamoto Y, Bauer J, Schülli TU, Tillack B, Schroeder T.

Nanotechnology. 2012 Sep 7;23(35):355706. doi: 10.1088/0957-4484/23/35/355706. Epub 2012 Aug 15.

PMID:
22894894
10.

Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.

Zhao Y, Zhou C, Zhang X, Zhang P, Dou Y, Wang W, Cao X, Wang B, Tang Y, Zhou S.

Nanoscale Res Lett. 2013 Mar 2;8(1):114. doi: 10.1186/1556-276X-8-114.

11.

Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors.

Ko H, Takei K, Kapadia R, Chuang S, Fang H, Leu PW, Ganapathi K, Plis E, Kim HS, Chen SY, Madsen M, Ford AC, Chueh YL, Krishna S, Salahuddin S, Javey A.

Nature. 2010 Nov 11;468(7321):286-9. doi: 10.1038/nature09541.

PMID:
21068839
12.

Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100).

Shklyaev AA, Latyshev AV.

Nanoscale Res Lett. 2016 Dec;11(1):366. doi: 10.1186/s11671-016-1588-1. Epub 2016 Aug 19.

13.

Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress.

Liu Y, Niu J, Wang H, Han G, Zhang C, Feng Q, Zhang J, Hao Y.

Nanoscale Res Lett. 2017 Dec;12(1):120. doi: 10.1186/s11671-017-1913-3. Epub 2017 Feb 16.

14.

Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction.

Benediktovitch A, Zhylik A, Ulyanenkova T, Myronov M, Ulyanenkov A.

J Appl Crystallogr. 2015 Apr 16;48(Pt 3):655-665. eCollection 2015 Jun 1.

15.

A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission.

Huang S, Lu W, Li C, Huang W, Lai H, Chen S.

Opt Express. 2013 Jan 14;21(1):640-6. doi: 10.1364/OE.21.000640.

PMID:
23388957
16.

Adiabatic mode coupling between SiGe photonic devices and SOI waveguides.

Lever L, Ikonić Z, Kelsall RW.

Opt Express. 2012 Dec 31;20(28):29500-6. doi: 10.1364/OE.20.029500.

PMID:
23388776
17.

Large area and depth-profiling dislocation imaging and strain analysis in Si/SiGe/Si heterostructures.

Chen X, Zuo D, Kim S, Mabon J, Sardela M, Wen J, Zuo JM.

Microsc Microanal. 2014 Oct;20(5):1521-7. doi: 10.1017/S1431927614012963. Epub 2014 Aug 27.

PMID:
25158752
18.
19.

Atomistic simulation of boron diffusion with charged defects and diffusivity in strained Si/SiGe.

Kim YK, Yoon KS, Kim JS, Won T.

J Nanosci Nanotechnol. 2007 Nov;7(11):4084-8.

PMID:
18047125
20.

Positron annihilation spectroscopy of vacancy-related defects in CdTe:Cl and CdZnTe:Ge at different stoichiometry deviations.

Šedivý L, Čížek J, Belas E, Grill R, Melikhova O.

Sci Rep. 2016 Feb 10;6:20641. doi: 10.1038/srep20641.

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