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Items: 1 to 20 of 151

1.

Formation of Ge quantum dots array in layer-cake technique for advanced photovoltaics.

Chien CY, Chang YJ, Chang JE, Lee MS, Chen WY, Hsu TM, Li PW.

Nanotechnology. 2010 Dec 17;21(50):505201. doi: 10.1088/0957-4484/21/50/505201. Epub 2010 Nov 22.

PMID:
21098937
2.

Ge quantum dot memory structure with laterally ordered highly dense arrays of Ge dots.

Nassiopoulou AG, Olzierski A, Tsoi E, Berbezier I, Karmous A.

J Nanosci Nanotechnol. 2007 Jan;7(1):316-21.

PMID:
17455497
3.

Enhanced 400-600 nm photoresponsivity of metal-oxide-semiconductor diodes with multi-stack germanium quantum dots.

Tzeng SS, Li PW.

Nanotechnology. 2008 Jun 11;19(23):235203. doi: 10.1088/0957-4484/19/23/235203. Epub 2008 May 6.

PMID:
21825783
4.

Three-dimensional Si/Ge quantum dot crystals.

Grützmacher D, Fromherz T, Dais C, Stangl J, Müller E, Ekinci Y, Solak HH, Sigg H, Lechner RT, Wintersberger E, Birner S, Holý V, Bauer G.

Nano Lett. 2007 Oct;7(10):3150-6. Epub 2007 Sep 25.

PMID:
17892317
5.

Self-organized formation and self-repair of a two-dimensional nanoarray of Ge quantum dots epitaxially grown on ultrathin SiO2-covered Si substrates.

Nakamura Y, Murayama A, Watanabe R, Iyoda T, Ichikawa M.

Nanotechnology. 2010 Mar 5;21(9):095305. doi: 10.1088/0957-4484/21/9/095305. Epub 2010 Feb 4.

PMID:
20130347
6.

Factors influencing epitaxial growth of three-dimensional Ge quantum dot crystals on pit-patterned Si substrate.

Ma YJ, Zhong Z, Yang XJ, Fan YL, Jiang ZM.

Nanotechnology. 2013 Jan 11;24(1):015304. doi: 10.1088/0957-4484/24/1/015304. Epub 2012 Dec 7.

PMID:
23220787
7.

Precise Ge quantum dot placement for quantum tunneling devices.

Chen KH, Chien CY, Li PW.

Nanotechnology. 2010 Feb 5;21(5):055302. doi: 10.1088/0957-4484/21/5/055302. Epub 2009 Dec 24.

PMID:
20032557
8.

Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular beam epitaxy.

Cui J, Lv Y, Yang XJ, Fan YL, Zhong Z, Jiang ZM.

Nanotechnology. 2011 Mar 25;22(12):125601. doi: 10.1088/0957-4484/22/12/125601. Epub 2011 Feb 14.

PMID:
21317488
9.

Synthesis and fundamental studies of (H3Ge)xSiH4-x molecules: precursors to semiconductor hetero- and nanostructures on Si.

Ritter CJ, Hu C, Chizmeshya AV, Tolle J, Klewer D, Tsong IS, Kouvetakis J.

J Am Chem Soc. 2005 Jul 13;127(27):9855-64.

PMID:
15998091
10.

Photoluminescent silicon quantum dots in core/shell configuration: synthesis by low temperature and spontaneous plasma processing.

Das D, Samanta A.

Nanotechnology. 2011 Feb 4;22(5):055601. doi: 10.1088/0957-4484/22/5/055601. Epub 2010 Dec 22.

PMID:
21178231
11.
12.

The influence of deposition temperature on the correlation of Ge quantum dot positions in amorphous silica matrix.

Buljan M, Desnica UV, Drazić G, Ivanda M, Radić N, Dubcek P, Salamon K, Bernstorff S, Holý V.

Nanotechnology. 2009 Feb 25;20(8):085612. doi: 10.1088/0957-4484/20/8/085612. Epub 2009 Feb 3.

PMID:
19417460
13.

Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots.

Talochkin AB, Cherkov AG.

Nanotechnology. 2009 Aug 26;20(34):345702. doi: 10.1088/0957-4484/20/34/345702. Epub 2009 Aug 4.

PMID:
19652280
14.

Size tunable Ge quantum dots for near-ultraviolet to near-infrared photosensing with high figures of merit.

Chien CY, Lai WT, Chang YJ, Wang CC, Kuo MH, Li PW.

Nanoscale. 2014 May 21;6(10):5303-8. doi: 10.1039/c4nr00168k.

PMID:
24699699
15.

Quantum-confined direct band transitions in tensile strained Ge/SiGe quantum wells on silicon substrates.

Chen Y, Li C, Lai H, Chen S.

Nanotechnology. 2010 Mar 19;21(11):115207. doi: 10.1088/0957-4484/21/11/115207. Epub 2010 Feb 24.

PMID:
20179329
16.

An electron-hole spectrum of Ge/Si structures with Ge quantum dots: photoconductivity measurements.

Talochkin AB, Chistokhin IB, Markov VA.

Nanotechnology. 2009 Apr 29;20(17):175401. doi: 10.1088/0957-4484/20/17/175401. Epub 2009 Apr 3.

PMID:
19420590
17.

Finite-difference time-domain simulations of exciton-polariton resonances in quantum-dot arrays.

Zeng Y, Fu Y, Bengtsson M, Chen X, Lu W, Agren H.

Opt Express. 2008 Mar 31;16(7):4507-19.

PMID:
18542549
18.

Extended defect states of Ge/Si quantum dots using optical isothermal capacitance transient spectroscopy.

Kwak DW, Park CJ, Lee YH, Kim WS, Cho HY.

Nanotechnology. 2009 Feb 4;20(5):055201. doi: 10.1088/0957-4484/20/5/055201. Epub 2009 Jan 9.

PMID:
19417338
19.

Optimal growth of Ge-rich dots on Si(001) substrates with hexagonal packed pit patterns.

Huangfu Y, Zhan W, Hong X, Fang X, Ding G, Ye H.

Nanotechnology. 2013 Jan 25;24(3):035302. doi: 10.1088/0957-4484/24/3/035302. Epub 2012 Dec 21.

PMID:
23263343
20.

Ge quantum dots structural peculiarities depending on the preparation conditions.

Erenburg S, Bausk N, Mazalov L, Nikiforov A, Yakimov A.

J Synchrotron Radiat. 2003 Sep 1;10(Pt 5):380-3. Epub 2003 Aug 28.

PMID:
12944626

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