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Items: 1 to 20 of 138

1.

Effect of top dielectric medium on gate capacitance of graphene field effect transistors: implications in mobility measurements and sensor applications.

Xia JL, Chen F, Wiktor P, Ferry DK, Tao NJ.

Nano Lett. 2010 Dec 8;10(12):5060-4. doi: 10.1021/nl103306a. Epub 2010 Nov 19.

PMID:
21090582
2.

Quantum capacitance limited vertical scaling of graphene field-effect transistor.

Xu H, Zhang Z, Wang Z, Wang S, Liang X, Peng LM.

ACS Nano. 2011 Mar 22;5(3):2340-7. doi: 10.1021/nn200026e. Epub 2011 Feb 16.

PMID:
21323320
3.
4.

Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.

Xu H, Zhang Z, Xu H, Wang Z, Wang S, Peng LM.

ACS Nano. 2011 Jun 28;5(6):5031-7. doi: 10.1021/nn201115p. Epub 2011 May 6.

PMID:
21528892
5.

Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors.

Yu C, Liu H, Ni W, Gao N, Zhao J, Zhang H.

Phys Chem Chem Phys. 2011 Feb 28;13(8):3461-7. doi: 10.1039/c0cp01026j. Epub 2011 Jan 14.

PMID:
21240394
6.

Self-aligned U-gate carbon nanotube field-effect transistor with extremely small parasitic capacitance and drain-induced barrier lowering.

Ding L, Wang Z, Pei T, Zhang Z, Wang S, Xu H, Peng F, Li Y, Peng LM.

ACS Nano. 2011 Apr 26;5(4):2512-9. doi: 10.1021/nn102091h. Epub 2011 Mar 11.

PMID:
21370813
7.

Growth and performance of yttrium oxide as an ideal high-kappa gate dielectric for carbon-based electronics.

Wang Z, Xu H, Zhang Z, Wang S, Ding L, Zeng Q, Yang L, Pei T, Liang X, Gao M, Peng LM.

Nano Lett. 2010 Jun 9;10(6):2024-30. doi: 10.1021/nl100022u.

PMID:
20455575
8.

Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance.

Min SW, Lee HS, Choi HJ, Park MK, Nam T, Kim H, Ryu S, Im S.

Nanoscale. 2013 Jan 21;5(2):548-51. doi: 10.1039/c2nr33443g. Epub 2012 Dec 12.

PMID:
23233087
9.

Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors.

Farmer DB, Chiu HY, Lin YM, Jenkins KA, Xia F, Avouris P.

Nano Lett. 2009 Dec;9(12):4474-8. doi: 10.1021/nl902788u.

PMID:
19883119
10.

Fabrication of transferable Al(2)O(3) nanosheet by atomic layer deposition for graphene FET.

Jung H, Park J, Oh IK, Choi T, Lee S, Hong J, Lee T, Kim SH, Kim H.

ACS Appl Mater Interfaces. 2014 Feb 26;6(4):2764-9. doi: 10.1021/am4052987. Epub 2014 Feb 11.

PMID:
24483324
11.

High mobility flexible graphene field-effect transistors with self-healing gate dielectrics.

Lu CC, Lin YC, Yeh CH, Huang JC, Chiu PW.

ACS Nano. 2012 May 22;6(5):4469-74. doi: 10.1021/nn301199j. Epub 2012 Apr 18.

PMID:
22501029
12.

Improvement of carrier mobility of top-gated SiC epitaxial graphene transistors using a PVA dielectric buffer layer.

Kim M, Hwang J, Lepak LA, Lee JW, Spencer MG, Tiwari S.

Nanotechnology. 2012 Aug 24;23(33):335202. doi: 10.1088/0957-4484/23/33/335202. Epub 2012 Jul 30.

PMID:
22842470
13.

Self-induced gate dielectric for graphene field-effect transistor.

Thiyagarajan K, Saravanakumar B, Mohan R, Kim SJ.

ACS Appl Mater Interfaces. 2013 Jul 24;5(14):6443-6. doi: 10.1021/am401219x. Epub 2013 Jul 5.

PMID:
23808621
14.

Low-frequency noise in individual carbon nanotube field-effect transistors with top, side and back gate configurations: effect of gamma irradiation.

Sydoruk VA, Goß K, Meyer C, Petrychuk MV, Danilchenko BA, Weber P, Stampfer C, Li J, Vitusevich SA.

Nanotechnology. 2014 Jan 24;25(3):035703. doi: 10.1088/0957-4484/25/3/035703. Epub 2013 Dec 17.

PMID:
24345726
15.

Low operating voltage single ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics.

Ju S, Lee K, Janes DB, Yoon MH, Facchetti A, Marks TJ.

Nano Lett. 2005 Nov;5(11):2281-6.

PMID:
16277468
16.

Mesostructured HfxAlyO2 Thin Films as Reliable and Robust Gate Dielectrics with Tunable Dielectric Constants for High-Performance Graphene-Based Transistors.

Lee Y, Jeon W, Cho Y, Lee MH, Jeong SJ, Park J, Park S.

ACS Nano. 2016 Jul 26;10(7):6659-66. doi: 10.1021/acsnano.6b01734. Epub 2016 Jul 1.

PMID:
27355098
17.

Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature.

Xia F, Farmer DB, Lin YM, Avouris P.

Nano Lett. 2010 Feb 10;10(2):715-8. doi: 10.1021/nl9039636.

PMID:
20092332
18.

Mobility enhancement of SnO2 nanowire transistors gated with a nanogranular SiO2 solid electrolyte.

Sun J, Huang W, Qian C, Yang J, Gao Y.

Phys Chem Chem Phys. 2014 Jan 21;16(3):1084-8. doi: 10.1039/c3cp54142h. Epub 2013 Nov 28.

PMID:
24288005
19.

Influence of Dielectric Layers on Charge Transport through Diketopyrrolopyrrole-Containing Polymer Films: Dielectric Polarizability vs Capacitance.

Lee J, Chung JW, Yoon GB, Lee MH, Kim DH, Park J, Lee JK, Kang MS.

ACS Appl Mater Interfaces. 2016 Nov 9;8(44):30344-30350. Epub 2016 Oct 27.

PMID:
27754656
20.

High-performance flexible graphene field effect transistors with ion gel gate dielectrics.

Kim BJ, Jang H, Lee SK, Hong BH, Ahn JH, Cho JH.

Nano Lett. 2010 Sep 8;10(9):3464-6. doi: 10.1021/nl101559n.

PMID:
20704323

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