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Items: 1 to 20 of 99

1.

Single-electron transport through single dopants in a dopant-rich environment.

Tabe M, Moraru D, Ligowski M, Anwar M, Jablonski R, Ono Y, Mizuno T.

Phys Rev Lett. 2010 Jul 2;105(1):016803. Epub 2010 Jul 2.

PMID:
20867471
2.

Atom devices based on single dopants in silicon nanostructures.

Moraru D, Udhiarto A, Anwar M, Nowak R, Jablonski R, Hamid E, Tarido JC, Mizuno T, Tabe M.

Nanoscale Res Lett. 2011 Jul 29;6:479. doi: 10.1186/1556-276X-6-479.

3.

Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices.

Moraru D, Samanta A, Tyszka K, Anh le T, Muruganathan M, Mizuno T, Jablonski R, Mizuta H, Tabe M.

Nanoscale Res Lett. 2015 Dec;10(1):372. doi: 10.1186/s11671-015-1076-z. Epub 2015 Sep 24.

4.

Single-electron tunneling through an individual arsenic dopant in silicon.

Shorokhov VV, Presnov DE, Amitonov SV, Pashkin YA, Krupenin VA.

Nanoscale. 2017 Jan 5;9(2):613-620. doi: 10.1039/c6nr07258e.

PMID:
27942691
5.
6.

Depth-dependent imaging of individual dopant atoms in silicon.

Voyles PM, Muller DA, Kirkland EJ.

Microsc Microanal. 2004 Apr;10(2):291-300.

PMID:
15306055
7.

Transport spectroscopy of coupled donors in silicon nano-transistors.

Moraru D, Samanta A, Anh le T, Mizuno T, Mizuta H, Tabe M.

Sci Rep. 2014 Aug 28;4:6219. doi: 10.1038/srep06219.

8.

Electric-Field-Controlled Dopant Distribution in Organic Semiconductors.

Müller L, Rhim SY, Sivanesan V, Wang D, Hietzschold S, Reiser P, Mankel E, Beck S, Barlow S, Marder SR, Pucci A, Kowalsky W, Lovrincic R.

Adv Mater. 2017 Aug;29(30). doi: 10.1002/adma.201701466. Epub 2017 Jun 6.

PMID:
28585293
9.

Photoluminescence imaging of solitary dopant sites in covalently doped single-wall carbon nanotubes.

Hartmann NF, Yalcin SE, Adamska L, Hároz EH, Ma X, Tretiak S, Htoon H, Doorn SK.

Nanoscale. 2015 Dec 28;7(48):20521-30. doi: 10.1039/c5nr06343d. Epub 2015 Nov 20.

PMID:
26586162
10.

Electric-field-assisted formation of an interfacial double-donor molecule in silicon nano-transistors.

Samanta A, Moraru D, Mizuno T, Tabe M.

Sci Rep. 2015 Nov 30;5:17377. doi: 10.1038/srep17377.

11.

Field effect properties of phosphorus doped CdS single-crystal nanoribbon via co-thermal-evaporation.

Wang Y, Jiang Y, Wu D, Sheng Y, Chen L, Li G, Jie J.

J Nanosci Nanotechnol. 2010 Jan;10(1):433-9.

PMID:
20352874
12.

Performance enhancement of semiconductor devices by control of discrete dopant distribution.

Hori M, Shinada T, Taira K, Shimamoto N, Tanii T, Endo T, Ohdomari I.

Nanotechnology. 2009 Sep 9;20(36):365205. doi: 10.1088/0957-4484/20/36/365205. Epub 2009 Aug 18.

PMID:
19687545
13.

Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors.

Yu C, Liu H, Ni W, Gao N, Zhao J, Zhang H.

Phys Chem Chem Phys. 2011 Feb 28;13(8):3461-7. doi: 10.1039/c0cp01026j. Epub 2011 Jan 14.

PMID:
21240394
14.

Air-stable surface charge transfer doping of MoS₂ by benzyl viologen.

Kiriya D, Tosun M, Zhao P, Kang JS, Javey A.

J Am Chem Soc. 2014 Jun 4;136(22):7853-6. doi: 10.1021/ja5033327. Epub 2014 May 20.

PMID:
24836497
15.

Stability and spectroscopy of single nitrogen dopants in graphene at elevated temperatures.

Warner JH, Lin YC, He K, Koshino M, Suenaga K.

ACS Nano. 2014 Nov 25;8(11):11806-15. doi: 10.1021/nn5054798. Epub 2014 Nov 12.

PMID:
25389658
16.

Spatial metrology of dopants in silicon with exact lattice site precision.

Usman M, Bocquel J, Salfi J, Voisin B, Tankasala A, Rahman R, Simmons MY, Rogge S, Hollenberg LC.

Nat Nanotechnol. 2016 Sep;11(9):763-8. doi: 10.1038/nnano.2016.83. Epub 2016 Jun 6.

PMID:
27271965
17.

Obtaining uniform dopant distributions in VLS-grown Si nanowires.

Koren E, Hyun JK, Givan U, Hemesath ER, Lauhon LJ, Rosenwaks Y.

Nano Lett. 2011 Jan 12;11(1):183-7. doi: 10.1021/nl103363c. Epub 2010 Dec 3.

PMID:
21126102
18.

A scanning Kelvin probe study of charge trapping in zone-cast pentacene thin film transistors.

Hallam T, Duffy CM, Minakata T, Ando M, Sirringhaus H.

Nanotechnology. 2009 Jan 14;20(2):025203. doi: 10.1088/0957-4484/20/2/025203. Epub 2008 Dec 9.

PMID:
19417265
19.

A tight-binding study of single-atom transistors.

Ryu H, Lee S, Fuechsle M, Miwa JA, Mahapatra S, Hollenberg LC, Simmons MY, Klimeck G.

Small. 2015 Jan 21;11(3):374-81. doi: 10.1002/smll.201400724. Epub 2014 Oct 8.

PMID:
25293353
20.

Issues of nanoelectronics: a possible roadmap.

Wang KL.

J Nanosci Nanotechnol. 2002 Jun-Aug;2(3-4):235-66. Review.

PMID:
12908252

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